2322

NTE2322
Silicon PNP Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/°C
Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Reistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0, Note 1
40
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
–
–
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
–
–
50
nA
Emitter Cutoff Current
IEBO
VEB = 3V, IE = 0
–
–
50
nA
hFE
VCE = 10V, IC = 10mA
75
–
–
VCE = 10V, IC = 150mA
100
–
–
VCE = 10V, IC = 300mA
30
–
–
IC = 150mA, IB = 15mA
–
–
0.4
V
IC = 300mA, IB = 30mA
–
–
1.6
V
IC = 150mA, IB = 15mA
–
–
1.5
V
IC = 300mA, IB = 30mA
–
–
2.6
V
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
fT
VCE = 20V, IC = 50mA, f = 100MHz
200
–
–
MHz
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
–
8
pF
Input Capacitance
Cibo
VEB = 2V, IC = 0, f = 1MHz
–
–
30
pF
Pin Connection Diagram
14 Collector
Collector 1
Base 2
13 Base
Emitter 3
12 Emitter
N.C. 4
11 N.C.
Emitter 5
10 Emitter
Base 6
9
Base
Collector 7
8
Collector
14
8
1
7
.300 (7.62)
.785 (19.95) Max
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min