2323

NTE2323
Silicon NPN Transistor
Quad, Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C, Each Die), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.98mW/°C
Total Device Dissipation (TA = +25°C, Four Die Equal Power), PD . . . . . . . . . . . . . . . . . . . . . . . 1.7W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.6mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Reistance, Junction–to–Ambient, RthJA
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W
Thermal Reistance, Junction–to–Case, RthJC
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39°C/W
Coupling Factors, Junction–to–Ambient
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10%
Coupling Factors, Junction–to–Case
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5%
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
200
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IE = 0
20
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
5
–
–
V
ICBO
VCB = 150V, IE = 0
–
–
100
nA
Collector Cutoff Current
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
VCE = 10V, IC = 1mA
25
45
–
VCE = 10V, IC = 10mA
40
60
–
VCE = 10V, IC = 30mA
40
80
–
Unit
ON Characteristics
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 20mA, IB = 2mA
–
0.3
0.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 20mA, IB = 2mA
–
0.7
0.9
V
Current Gain–Bandwidth Product
fT
VCE = 20V, IC = 10mA, f = 100MHz
50
80
–
MHz
Output Capacitance
Cobo
VCB = 20V, IE = 0, f = 1MHz
–
2.5
5.0
pF
Input Capacitance
Cibo
VEB = 3V, IC = 0, f = 1MHz
–
40
50
pF
Pin Connection Diagram
14 Collector
Collector 1
13 Base
Base 2
Emitter 3
12 Emitter
N.C. 4
11 N.C.
Emitter 5
10 Emitter
Base 6
9
Base
Collector 7
8
Collector
14
8
1
7
.785 (19.95) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min
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