63

NTE63
Silicon NPN Transistor
High Gain, Low Noise Amp
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz
D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Total Device Dissipation (TL = +50°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Lead, RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
12
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
20
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
2
–
–
V
–
–
50
nA
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 30mA, VCE = 10V
30
–
200
fT
IC = 30mA, VCE = 10V,
f = 1GHz
–
5.0
–
GHz
VCB = 10V, IE = 0, f = 1MHz
–
0.6
1.0
pF
IC = 5mA, VCE = 10V, f = 1GHz
–
2.5
–
dB
IC = 5mA, VCE = 10V, f = 2GHz
–
4.0
–
dB
IC = 5mA, VCE = 10V, f = 1GHz
–
10
–
dB
IC = 5mA, VCE = 10V, f = 2GHz
–
6
–
dB
IC = 30mA, VCE = 10V, f = 1GHz
–
12.5
–
dB
IC = 30mA, VCE = 10V, f = 2GHz
–
7.5
–
dB
Dynamic Characteristics
Current Gain–Bandwidth Product
Collector–Base Capacitance
Ccb
Functional Tests
Noise Figure
NFMIN
Power Gain at Optimum Noise Figure
Maximum Available Power Gain
(Note 1)
GNF
Gmax
Note1.Gmax = |S21|2 / (I – |S11|2) (I – |S22|2)
.075 (1.9) Min
C
Seating Plane
.770
(19.5)
Max
E
E
.190
(4.83)
Dia
.325
(8.27)
Max
B
.036 (0.92)
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