64

NTE64
Silicon NPN Transistor
UHF High Speed Switch
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
D Low Noise Figure: NF = 2dB Typ @ f = 1GHz
D High Power Gain: Gpe = 10dB Min @ f = 1GHz
D Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
15
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
25
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
2
–
–
V
–
–
50
nA
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 5mA, VCE = 5V
30
80
200
IC = 15mA, VCE = 10V,
f = 1GHz
–
4.5
–
GHz
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
Collector–Base Capacitance
Ccb
VCB = 10V, IE = 0, f = 1MHz
–
0.4
1.0
pF
Noise Figure
NF
IC = 5mA, VCE = 6V, f = 1GHz
–
2.0
2.5
dB
Gpe
VCC = 6V, IC = 5mA, f = 1GHz
10
12
–
dB
IC = 5mA, VCE = 6V,
f = 0.9GHz
–
+23
–
dBm
Functional Tests
Common–Emitter Amplifier Power Gain
Third Order Intercept
.075 (1.9) Min
C
Seating Plane
.770
(19.5)
Max
E
E
.190
(4.83)
Dia
.325
(8.27)
Max
B
.036 (0.92)
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