313

NTE313
Silicon NPN Transistor
High Gain, Low Noise,
VHF Mixer and VHF/RF Amp
Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier
applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
µA
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
0.2
DC Current Gain
hFE
VCE = 10V, IC = 2mA
20
60
200
fT
VCE = 10V, IE = –2mA
400
530
–
MHz
Current–Gain Bandwidth Product
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
0.5
1.0
pF
Noise Figure
NF
IE = –2mA, f = 200MHz
–
2.5
3.3
dB
Power Gain
PG
IE = –2mA, f = 200MHz
20
23
–
dB
AGC Current
IAGC
PG = –30dB
–
–9
–11
mA
.157 (4.0)
Base
Emitter
Collector
.026 (0.66)
.079 (2.02) Max
.008 (0.20)
.150 (3.81) Dia Max
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