65

NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.
Features:
D High Current–Gain Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TA = +60°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW
Derate Above 60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thremal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
15
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
20
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
3
–
–
V
nA
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
–
–
50
hFE
VCE = 10V, IC = 14mA
25
–
250
ON Characteristics
DC Current Gain
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCE = 10V, IC = 14mA, f = 0.5GHz
–
5.0
–
GHz
Ccb
VCB = 10V, IE = 0, f = 1MHz
–
0.5
1.0
pF
NF
VCE = 10V, IC = 2mA, f = 0.5GHz
–
2.4
–
dB
VCE = 10V, IC = 2mA, f = 1.0GHz
–
3.0
–
dB
VCE = 10V, IC = 2mA, f = 0.5GHz
–
15
–
dB
VCE = 10V, IC = 2mA, f = 1.0GHz
–
10
–
dB
VCE = 10V, IC = 2mA, f = 0.5GHz
–
18
–
dB
VCE = 10V, IC = 2mA, f = 1.0GHz
–
12
–
dB
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
Collector–Base Capacitance
Functional Tests
Noise Figure
Power Gain at Optimum Noise Figure
GNF
Gmax
Maximum Available Power Gain
(Note 1)
|S21|2
G
=
max
Note 1.
(I – |S11|2) (I – |S22|2)
.205 (5.2) Dia Max
.039 (1.0)
.005 (0.15)
.098 (2.5)
.197
(5.0)
Collector
.354 (9.0)
Emitter
Base
.197 5.0)
.147
(3.75)
Max
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