26

NTE26
Silicon NPN Transistor
Low Noise Audio Amplifier
Features:
D VCEO = 120V (Min)
D Low Noise: = 1dB (Typ), 10dB (Max)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 120V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
0.1
µA
DC Current Gain
hFE
VCE = 6V, IC = 2mA
350
–
700
–
–
0.3
V
VCE = 6V, IC = 1mA
–
100
–
MHz
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
VCE(sat) IC = 10mA, IB = 1mA
fT
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
3.0
–
pF
Noise
NF
VCE = 6V, IC = 0.1mA, f = 1kHz,
rg = 10kΩ
–
1.0
10
dB
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max