2505

NTE2505
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D High Current Capacity
D High DC Current Gain
D Low Collector Emitter Saturation Voltage
D High Emitter Base Breakdown Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
100
nA
Emitter Cutoff Current
IEBO
VEB = 10V, IC = 0
–
–
100
nA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
800
VCE = 5V, IC = 1A
600
–
–
Gain–Bandwidth Product
Output Capacitance
1500 3200
fT
VCE = 10V, IC = 50mA
–
260
–
MHz
Cob
VCB = 10V, f = 1MHz
–
27
–
pF
Collector Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 20mA
–
0.15
0.5
V
Base Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 20mA
–
0.85
1.2
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
30
–
–
V
Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
25
–
–
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
15
–
–
V
–
0.14
–
µs
–
1.35
–
µs
–
0.1
–
µs
Turn–On Time
ton
Storage Time
tstg
Fall Time
VCC = 10V, VBE = –5V,
100IB1 = –100IB2 = IC = 700mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
tf
.271 (6.9)
.098
(2.5)
.137
(3.5)
B
C
.177
(4.5)
E
.039 (1.0)
.039 (1.0)
.122
(3.1)
.098 (2.5)
.161
(4.1)