2590

NTE2590
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 900V, IE = 0
–
–
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
1.0
µA
DC Current Gain
hFE
VCE = 5V, IC =2mA
20
50
120
fT
VCE = 10V, IC = 2mA
–
6
–
MHz
Cob
VCB = 100V, f = 1MHz
–
2.0
–
pF
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
VCE(sat)
IC = 5mA, IB = 1mA
–
–
5
V
Base Emitter Saturation Voltage
VBE(sat)
IC =5A, IB = 1mA
–
–
2
V
1700
–
–
V
900
–
–
V
5
–
–
V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
.402 (10.2)
.035
(0.9)
.177 (4.5)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
.100 (2.54)