Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER

DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).

FEATURES
* Low Noise and High Gain
* High Power Gain

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SC3356G-x-AE2-R
SOT-23-3
2SC3356L-x-AE3-R
SOT-23
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Description
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
2SC3356L
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
2SC3356G
1 of 4
QW-R206-024.F
2SC3356

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
12
V
Emitter to Base Voltage
BVEBO
3
V
Collector Current
IC
100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-65~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
CRE
NF
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
VCB =10V,IE =0
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
MIN
20
12
3
TYP
MAX
1.0
1.0
300
50
7
1.0
2.0
UNIT
V
V
V
μA
μA
GHz
pF
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
50-160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
160-240
C
240-300
2 of 4
QW-R206-024.F
2SC3356
TYPICAL CHARACTERISTICS
Feed-back Capacitance, CRE (pF)
Total Power Dissipation, PT (mW)

NPN SILICON TRANSISTOR
200
DC Current Gain vs. Collector Current
Insertion Gain vs. Collector Current
15
VCE=10V
100
10
50
5
20
1
10
5
Collector Current, IC (mA)
0
0.5
50
1
10
5
Collector Current, IC (mA)
50 70
Maximum Gain, GMAX (dB)
Insertion Gain,|S21θ|2(dB)
Gain Bandwidth Product, fT (GHz)
10
0.5
VCE=10V
f=1.0GHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-024.F
2SC3356
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)

7
Noise Figure vs. Collector Current
Noise Figue, NF (dB)
Noise Figure, NF (dB)
5
4
3
2
f=1.0GHz
IC=20mA
4
|S21θ|2
3
2
NF
1
1
0
0.5
5
VCE=10V
f=1.0GHz
6
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
0
1
5
10
Collector Current, IC (mA)
50 70
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-024.F
Similar pages