IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.27Ω and 0.36Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA09594. Symbol Ordering Information D PART NUMBER PACKAGE BRAND IRF120 TO-204AA IRF120 IRF121 TO-204AA IRF121 IRF122 TO-204AA IRF122 IRF123 TO-204AA IRF123 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 2-1 File Number 1565.2 IRF120, IRF121, IRF122, IRF123 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF120 100 100 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 IRF121 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 IRF122 100 100 8.0 5.6 32 ±20 60 0.4 36 -55 to 175 IRF123 80 80 8.0 5.6 32 ±20 60 0.4 36 -55 to 175 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP 100 - - V 80 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC - - 250 µA IRF120, IRF121 9.2 - - A IRF122, IRF123 8.0 - - A VGS = ±20V - - ±100 nA ID = 5.6A, VGS = 10V (Figure 8, 9) - 0.25 0.27 Ω 0.27 0.36 Ω 2.9 4.0 - S - 8.8 13 ns - 30 45 ns - 19 29 ns - 20 30 ns - 9.7 15 nC - 2.2 - nC - 2.3 - nC Drain to Source Breakdown Voltage SYMBOL BVDSS IRF120, IRF122 TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 10) IRF121, IRF123 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) VGS(TH) IDSS ID(ON) IGSS rDS(ON) IRF120, IRF121 VDS = VGS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V IRF122, IRF123 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) gfs td(ON) tr td(OFF) VDS > ID(ON) x rDS(ON)MAX, ID = 5.6A (Figure 12) VDD = 50V, ID ≈ 9.2A, RGS = 18Ω, RL = 5.1Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd MAX UNITS VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 2-2 IRF120, IRF121, IRF122, IRF123 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 350 - pF Input Capacitance CISS Output Capacitance COSS - 130 - pF Reverse Transfer Capacitance CRSS - 36 - pF - 5.0 - nH - 12.5 - nH - - 2.5 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 8.0 A - - 32 A - - 2.5 V Internal Drain Inductance LD Internal Source Inductance LS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance, Junction to Case RθJC Thermal Resistance, Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) trr TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 55 110 240 ns QRR TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 0.25 0.53 1.10 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 640µH, RG = 25Ω, peak IAS= 9.2A (Figures 15, 16). 2-3 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 10 POWER DISSIPATION MULTIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) IRF120 IRF121 6 IRF122 IRF123 4 2 0 25 175 150 8 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC , THERMAL IMPEDANCE (oC/W) 10 0.5 1 0.2 0.1 PDM 0.05 0.02 0.01 0.1 t1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ= PDM x ZθJC + TC SINGLE PULSE 0.01 10-5 t2 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 15 100 10V IRF122, IRF123 10µs 100µs 10 1ms OPERATION IN THIS AREA LIMITED BY rDS(ON) 1 TJ = MAX RATED SINGLE PULSE 0.1 1 10ms DC TC = 25oC 80µs PULSE TEST VGS = 8V 12 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRF120, IRF121 VGS = 7V 9 VGS = 6V 6 VGS = 5V 3 IRF120, IRF122 IRF121, IRF123 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4V 0 0 1000 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 2-4 50 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 15 100 80µs PULSE TEST VDS ≥ 50V 80µs PULSE TEST VGS = 10V VGS = 8V 12 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) (Continued) VGS = 7V 9 VGS = 6V 6 VGS = 5V 3 10 TJ = 175oC 1 TJ = 25oC VGS = 4V 0 0.1 0 1.0 2.0 3.0 4.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5.0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 3.0 2.5 80µs PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE FIGURE 6. SATURATION CHARACTERISTICS 2.0 1.5 VGS = 10V 1.0 0.5 VGS = 20V 0 0 8 16 24 32 ID = 9.2A VGS = 10V 2.4 1.8 1.2 0.6 0.0 -60 40 0 60 120 180 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1000 1.25 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS ID = 250µA 800 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 10 1.05 0.95 0.85 600 CISS 400 COSS 200 CRSS 0.75 -60 0 60 120 TJ, JUNCTION TEMPERATURE (oC) 0 180 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 2-5 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 100 VDS ≥ 50V 80µs PULSE TEST ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 5.0 TJ = 25oC 4.0 3.0 TJ = 175oC 2.0 1.0 0 0 3 (Continued) 6 9 ID, DRAIN CURRENT (A) 12 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 175oC TJ = 25oC 1 0.1 0.0 15 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 10 ID = 9.2A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 0 3 6 9 12 Qg(TOT), TOTAL GATE CHARGE (nC) 15 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS tP L VDS IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VDD + RG VDD - VGS DUT 0V tP 0 IAS 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS 2-6 IRF120, IRF121, IRF122, IRF123 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr VDS RL 90% + RG - 10% 0 VDD 90% 10% 90% DUT VGS 0 50% 50% PULSE WIDTH 10% VGS FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) CURRENT REGULATOR VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D Ig(REF) VDS 0 DUT G S 0 IG CURRENT SAMPLING RESISTOR VGS IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 2-7