HFA3046, HFA3096, HFA3127, HFA3128 ® Data Sheet December 21, 2005 FN3076.13 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com. • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz • PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60 • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V • Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB • Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA • Complete Isolation Between Transistors • Pin Compatible with Industry Standard 3XXX Series Arrays • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • VHF/UHF Amplifiers • VHF/UHF Mixers • IF Converters • Synchronous Detectors Ordering Information PART NUMBER* PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # HFA3046B HFA3046B -55 to 125 14 Ld SOIC M14.15 HFA3046BZ (Note) HFA3046BZ -55 to 125 14 Ld SOIC (Pb-free) M14.15 HFA3096B HFA3096B -55 to 125 16 Ld SOIC M16.15 HFA3096BZ (Note) HFA3096BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15 HFA3127B HFA3127B -55 to 125 16 Ld SOIC M16.15 HFA3127BZ (Note) HFA3127BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15 HFA3127R 127 -55 to 125 16 Ld 3x3 QFN L16.3x3 HFA3127RZ (Note) 127Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3 HFA3128B HFA3128B -55 to 125 16 Ld SOIC M16.15 HFA3128BZ (Note) HFA3128BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15 HFA3128R 128 -55 to 125 16 Ld 3x3 QFN L16.3x3 HFA3128RZ (Note) 128Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3 *Add “96” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HFA3046, HFA3096, HFA3127, HFA3128 Pinouts HFA3046 TOP VIEW 12 4 11 7 8 Q3 6 7 8 Q3 Q1 Q2 Q5 HFA3128 TOP VIEW 16 1 15 2 14 3 Q1 Q2 Q5 16 15 14 13 4 13 4 12 NC 5 12 NC 5 12 11 6 11 6 11 10 7 10 7 9 8 9 8 Q3 Q4 Q3 Q4 13 10 9 HFA3127, HFA3128 TOP VIEW Q1B 9 3 16 15 14 13 Q2E 1 12 Q5B Q2B 2 11 Q5E NC 3 10 Q5C Q3C 4 2 9 5 6 7 8 Q4E 6 Q4 2 14 Q1E Q4 10 Q2 15 Q4B 5 5 1 Q1C Q2 Q5 3 16 NC Q3B 3 4 2 13 Q5 Q1 Q2C 2 1 14 Q1 HFA3127 TOP VIEW Q3E 1 HFA3096 TOP VIEW Q4C FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C 34mA at TJ = 125°C 37mA at TJ = 110°C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA Thermal Resistance (Typical) Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C θJA (°C/W) θJC (°C/W) 14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A 16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A QFN Package (Notes 2, 3). . . . . . . . . . 57 10 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θJA is measured with the component mounted on an evaluation PC board in free air. 2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. 3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications TA = 25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DC NPN CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = 100µA, IE = 0 12 18 - 12 18 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = 100µA, IB = 0 8 12 - 8 12 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = 10mA, VCE = 2V 40 130 - 40 130 - Early Voltage, VA IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/°C - 1 - - 1 - pA Collector to Collector Leakage Electrical Specifications TA = 25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DYNAMIC NPN CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz IC = 10mA, VCE = 5V - 8 - - 8 - GHz 3 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = 25°C (Continued) DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS Power Gain-Bandwidth Product, fMAX IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF Electrical Specifications TA = 25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DC PNP CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = -100µA, IE = 0 10 15 - 10 15 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = -100µA, IB = 0 8 15 - 8 15 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = -10mA, VCE = -2V 20 60 - 20 60 - Early Voltage, VA IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/°C - 1 - - 1 - pA Collector to Collector Leakage Electrical Specifications TA = 25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DYNAMIC PNP CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50Ω - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = -1mA, VCE = -5V - 2 - - 2 - GHz IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz Power Gain-Bandwidth Product IC = -10mA, VCE = -5V - 3 - - 2 - GHz Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF 4 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = 25°C (Continued) DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage IC = 10mA, VCE = 5V - 1.5 5.0 - 1.5 5.0 mV Input Offset Current IC = 10mA, VCE = 5V - 5 25 - 5 25 µA Input Offset Voltage TC IC = 10mA, VCE = 5V - 0.5 - - 0.5 - µV/°C S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site. Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05 2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35 3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44 4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16 5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59 6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93 7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37 8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10 9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25 1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96 1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31 1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37 1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19 1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83 1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31 1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66 1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90 1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05 1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12 2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13 2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09 2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99 2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85 2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68 2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47 2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23 2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97 2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68 2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37 3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05 5 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| (Continued) PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 10mA 1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26 2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95 3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31 4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45 5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77 6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72 7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65 8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85 9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49 1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71 1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62 1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28 1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76 1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08 1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28 1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38 1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41 1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37 1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27 2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13 2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95 2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74 2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50 2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24 2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95 2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64 2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32 2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98 2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62 3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76 2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38 3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25 4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31 5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81 6 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10 7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47 8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15 9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33 1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15 1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69 1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05 1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26 1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38 1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43 1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44 1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43 1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40 1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38 2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36 2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35 2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35 2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38 2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42 2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49 2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56 2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67 2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81 2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96 3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13 VCE = -5V, IC = -10mA 1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46 2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76 3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10 4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83 5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63 6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07 7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60 8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49 9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97 1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18 1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20 1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11 7 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95 1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77 1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58 1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39 1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23 1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09 1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98 2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91 2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87 2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87 2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90 2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97 2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07 2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18 2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34 2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55 2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76 3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00 25 IB = 200µA 20 IB = 160µA 100m 10m IB =120µA 15 IB = 80µA 10 IB = 40µA 5 0 COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) Typical Performance Curves 1m VCE = 3V IC IB 100µ 10µ 1µ 100n 10n 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 8 1n 0.5 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) 1.0 FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves (Continued) 10.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = 3V 160 DC CURRENT GAIN 140 120 100 80 60 40 20 0 1µ 10µ 100µ 1m 10m 8.0 VCE = 5V 6.0 VCE = 1V 4.0 2.0 0 0.1 100m FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -3V 100 IC -10m IB = -320µA COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) -100m IB = -240µA -15 IB = -160µA -10 IB = -80µA -5 IB -1m -100µ -10µ -1µ -100n -10n 0 0 -1 -2 -3 -4 -1n -0.5 -5 FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE -0.8 -0.9 -1.0 FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE GAIN BANDWIDTH PRODUCT (GHz) 160 140 120 100 80 60 40 20 -10µ -0.7 5.0 VCE = -3V 0 -1µ -0.6 BASE TO EMITTER VOLTAGE (V) COLLECTOR TO EMITTER VOLTAGE (V) DC CURRENT GAIN 10 FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) IB = -400µA -20 1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) -25 VCE = 3V -100µ -1m -10m COLLECTOR CURRENT (A) FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT 9 -100m VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR CURRENT (mA) FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Die Characteristics DIE DIMENSIONS: PASSIVATION: 53 mils x 52 mils x 19 mils 1340µm x 1320µm x 483µm Type: Nitride Thickness: 4kÅ ±0.5kÅ METALLIZATION: PROCESS: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ UHF-1 SUBSTRATE POTENTIAL: (POWERED UP) Unbiased Metallization Mask Layout HFA3096, HFA3127, HFA3128 2 1340µm (53 mils) 1 16 15 3 14 4 13 5 12 6 11 7 8 9 10 1320µm (52 mils) HFA3046 2 1 14 13 3 1340µm (53 mils) 12 4 5 11 6 10 7 8 9 1320µm (52 mils) Pad numbers correspond to SOIC pinout. 10 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC) M14.15 (JEDEC MS-012-AB ISSUE C) N INDEX AREA H 0.25(0.010) M 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 3 L SEATING PLANE -A- h x 45o A D -C- e α A1 B 0.25(0.010) M C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3367 0.3444 8.55 8.75 3 E 0.1497 0.1574 3.80 4.00 4 e C 0.10(0.004) B S 0.050 BSC 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N NOTES: MILLIMETERS α 14 0° 14 8° 0° 7 8° Rev. 0 12/93 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 11 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) N INDEX AREA H 0.25(0.010) M 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M INCHES E -B- 1 2 3 L SEATING PLANE -A- A D h x 45° -C- e A1 B 0.25(0.010) M C 0.10(0.004) C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3859 0.3937 9.80 10.00 3 E 0.1497 0.1574 3.80 4.00 4 e α B S 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N α NOTES: MILLIMETERS 16 0° 16 8° 0° 7 8° Rev. 1 6/05 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 12 FN3076.13 December 21, 2005 HFA3046, HFA3096, HFA3127, HFA3128 Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP) L16.3x3 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE 2X MILLIMETERS 0.15 C A D A 9 D/2 D1 D1/2 2X N 6 INDEX AREA 0.15 C B 1 2 3 E1/2 E 9 2X B TOP VIEW 0.15 C A A 0.90 1.00 - - - 0.05 - A2 - - 1.00 9 A3 0.20 REF 0.18 0 A3 SIDE VIEW 9 5 NX b 4X P D1 2.75 BSC 9 1.35 1.50 1.65 7, 8, 10 3.00 BSC - 2.75 BSC 1.35 1.50 9 1.65 7, 8, 10 0.50 BSC - k 0.20 - - - L 0.30 0.40 0.50 8 N 16 2 Nd 4 3 Ne P - - 0.60 NX k θ - - 12 D2 2 N 5, 8 - 8 7 4 3 9 9 Rev. 1 6/04 4X P NOTES: 1 (DATUM A) 2 3 6 INDEX AREA NX L N e 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. (Ne-1)Xe REF. E2 E2/2 2. N is the number of terminals. 7 3. Nd and Ne refer to the number of terminals on each D and E. 8 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 9 CORNER OPTION 4X (Nd-1)Xe REF. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. BOTTOM VIEW A1 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. NX b 5 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. SECTION "C-C" C L 9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation. C L L1 0.30 3.00 BSC 0.10 M C A B D2 (DATUM B) A1 0.23 9 D e 0.08 C SEATING PLANE C C 0.80 E1 / / 0.10 C C NOTES A E2 A2 MAX A1 E 0.15 C B 8 NOMINAL D2 2X 4X MIN b E/2 E1 SYMBOL 10 L e L1 10 L 10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2 and D2 MAX dimension. e TERMINAL TIP FOR ODD TERMINAL/SIDE FOR EVEN TERMINAL/SIDE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 13 FN3076.13 December 21, 2005