HIP4082 ® Data Sheet January 3, 2006 80V, 1.25A Peak Current H-Bridge FET Driver FN3676.4 Features The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC (N) and DIP packages. Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and flexible with the HIP4082 H-bridge driver. With operation up to 80V, the device is best suited to applications of moderate power levels. • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations • Bootstrap Supply Max Voltage to 95VDC • Drives 1000pF Load in Free Air at 50°C with Rise and Fall Times of Typically 15ns • User-Programmable Dead Time (0.1 to 4.5µs) • DIS (Disable) Overrides Input Control and Refreshes Bootstrap Capacitor when Pulled Low Similar to the HIP4081, it has a flexible input protocol for driving every possible switch combination except those which would cause a shoot-through condition. The HIP4082’s reduced drive current allows smaller packaging and it has a much wider range of programmable dead times (0.1 to 4.5µs) making it ideal for switching frequencies up to 200kHz. The HIP4082 does not contain an internal charge pump, but does incorporate non-latching level-shift translation control of the upper drive circuits. • Input Logic Thresholds Compatible with 5V to 15V Logic Levels This set of features and specifications is optimized for applications where size and cost are important. For applications needing higher drive capability the HIP4080A and HIP4081A are recommended. • DC Motor Controls Ordering Information • Noise Cancellation Systems PART NUMBER HIP4082IB* PART TEMP. MARKING RANGE (°C) HIP4082IB PACKAGE PKG. DWG. # • Shoot-Through Protection • Undervoltage Protection • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • UPS Systems • Full Bridge Power Supplies • Switching Power Amplifiers • Battery Powered Vehicles • Peripherals -55 to +125 16 Ld SOIC (N) M16.15 • Medium/Large Voice Coil Motors HIP4082IBZ* 4082IBZ (Note) -55 to +125 16 Ld SOIC (N) M16.15 (Pb-free) HIP4082IP -55 to +125 16 Ld PDIP • Related Literature - TB363, Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) HIP4082IP HIP4082IPZ HIP4082IPZ -55 to +125 16 Ld PDIP** (Note) (Pb-free) E16.3 E16.3 Pinout HIP4082 (PDIP, SOIC) TOP VIEW *Add “-T” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/ JEDEC J STD-020. BHB 1 16 BHO BHI 2 15 BHS BLI 3 14 BLO **Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. ALI 4 13 ALO DEL 5 12 VDD VSS 1 6 11 AHS AHI 7 10 AHO DIS 8 9 AHB CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Harris Corporation 1995. Copyright Intersil Americas Inc. 2003-2006. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HIP4082 Application Block Diagram 80V 12V BHO BHS BHI LOAD BLO BLI HIP4082 ALI ALO AHS AHI AHO GND GND Functional Block Diagram 9 LEVEL SHIFT U/V BHI 2 AHI 7 DIS 8 AHB BHB 1 DRIVER DRIVER LEVEL SHIFT 10 AHO BHO 16 11 AHS U/V BHS 15 TURN-ON DELAY TURN-ON DELAY VDD VDD 12 ALI 4 DEL 5 BLI 3 VSS 6 DETECTOR UNDERVOLTAGE DRIVER TURN-ON DELAY 2 DRIVER 13 ALO BLO 14 TURN-ON DELAY FN3676.4 January 3, 2006 HIP4082 Typical Application (PWM Mode Switching) 80V 12V PWM INPUT DELAY RESISTOR DIS FROM OPTIONAL OVERCURRENT LATCH 1 BHB BHO 16 2 BHI BHS 15 3 BLI BLO 14 4 ALI ALO 13 5 DEL VDD 12 6 VSS AHS 11 7 AHI AHO 10 8 DIS AHB 9 LOAD 12V GND RDIS TO OPTIONAL CURRENT CONTROLLER OR OVERCURRENT LATCH + - RSH GND 3 FN3676.4 January 3, 2006 HIP4082 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on AHS, BHS . . . . . -6V (Transient) to 80V (25°C to 150°C) Voltage on AHS, BHS . . . . . -6V (Transient) to 70V (-55°C to150°C) Voltage on AHB, BHB . . . . . . . . VAHS, BHS -0.3V to VAHS, BHS +VDD Voltage on ALO, BLO. . . . . . . . . . . . . . . . . . VSS -0.3V to VDD +0.3V Voltage on AHO, BHO . . . VAHS, BHS -0.3V to VAHB, BHB +0.3V Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5mA to 0mA Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns NOTE: All voltages are relative VSS unless otherwise specified. Thermal Resistance θJA (°C/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . See Curve Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Max. Junction Temperature. . . . . . . . . . . . . . . . . . +150°C Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C (For SOIC - Lead Tips Only)) Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +8.5V to +15V Voltage on VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +1.0V Voltage on AHB, BHB . . . . . . . . VAHS, BHS +7.5V to VAHS, BHS +VDD Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . -4mA to -100µA CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K Electrical Specifications TJ = -55°C TO +150°C TJ = +25°C PARAMETER SYMBOL MIN TYP MAX MIN All inputs = 0V, RDEL = 100K 1.2 2.3 3.5 0.85 4 mA All inputs = 0V, RDEL = 10K 2.2 4.0 5.5 1.9 6.0 mA f = 50kHz, no load 1.5 2.6 4.0 1.1 4.2 mA 50kHz, no load, RDEL = 10kΩ 2.5 4.0 6.4 2.1 6.6 mA TEST CONDITIONS MAX UNITS SUPPLY CURRENTS & UNDER VOLTAGE PROTECTION VDD Quiescent Current IDD VDD Operating Current IDDO AHB, BHB Off Quiescent Current IAHBL, IBHBL AHI = BHI = 0V 0.5 1.0 1.5 0.4 1.6 mA AHB, BHB On Quiescent Current IAHBH, IBHBH AHI = BHI = VDD 65 145 240 40 250 µA AHB, BHB Operating Current IAHBO, IBHBO f = 50kHz, CL = 1000pF .65 1.1 1.8 .45 2.0 mA AHS, BHS Leakage Current IHLK - - 1.0 - - µA VAHS = VBHS = 80V VAHB = VBHB = 96 VDD = Not Connected VDD Rising Undervoltage Threshold VDDUV+ 6.8 7.6 8.25 6.5 8.5 V VDD Falling Undervoltage Threshold VDDUV- 6.5 7.1 7.8 6.25 8.1 V Undervoltage Hysteresis UVHYS 0.17 0.4 0.75 0.15 0.90 V AHB, BHB Undervoltage Threshold VHBUV Referenced to AHS & BHS 5 6.0 7 4.5 7.5 V 0.8 V INPUT PINS: ALI, BLI, AHI, BHI, & DIS Low Level Input Voltage VIL Full Operating Conditions - - 1.0 - High Level Input Voltage VIH Full Operating Conditions 2.5 - - 2.7 - 35 - - - mV Input Voltage Hysteresis V Low Level Input Current IIL VIN = 0V, Full Operating Conditions -145 -100 -60 -150 -50 µA High Level Input Current IIH VIN = 5V, Full Operating Conditions -1 - +1 -10 +10 µA RDEL = 100K 2.5 4.5 8.0 2.0 8.5 µs RDEL = 10K 0.27 0.5 0.75 0.2 0.85 µs TURN-ON DELAY PIN DEL Dead Time TDEAD 4 FN3676.4 January 3, 2006 HIP4082 VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K (Continued) Electrical Specifications TJ = -55°C TO +150°C TJ = +25°C PARAMETER SYMBOL MIN TEST CONDITIONS TYP MAX MIN MAX UNITS GATE DRIVER OUTPUT PINS: ALO, BLO, AHO, & BHO Low Level Output Voltage VOL IOUT = 50mA 0.65 1.1 0.5 1.2 V High Level Output Voltage VDD-VOH IOUT = -50mA 0.7 1.2 0.5 1.3 V Peak Pullup Current IO + VOUT = 0V 1.1 1.4 2.5 0.85 2.75 A Peak Pulldown Current IO - VOUT = 12V 1.0 1.3 2.3 0.75 2.5 A Switching Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL= 100K, CL = 1000pF. TJ = -55°C TO +150°C TJ = +25°C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS Lower Turn-off Propagation Delay (ALI-ALO, BLI-BLO) TLPHL - 25 50 - 70 ns Upper Turn-off Propagation Delay (AHI-AHO, BHI-BHO) THPHL - 55 80 - 100 ns Lower Turn-on Propagation Delay (ALI-ALO, BLI-BLO) TLPLH - 40 85 - 100 ns Upper Turn-on Propagation Delay (AHI-AHO, BHI-BHO) THPLH - 75 110 - 150 ns Rise Time TR - 9 20 - 25 ns Fall Time TF - 9 20 - 25 ns TPWIN-ON/OFF 50 - - 50 - ns 80 ns Minimum Input Pulse Width Output Pulse Response to 50 ns Input Pulse 63 TPWOUT Disable Turn-off Propagation Delay (DIS - Lower Outputs) TDISLOW - 50 80 - 90 ns Disable Turn-off Propagation Delay (DIS - Upper Outputs) TDISHIGH - 75 100 - 125 ns Disable Turn-on Propagation Delay (DIS - ALO & BLO) TDLPLH - 40 70 - 100 ns Disable Turn-on Propagation Delay (DIS- AHO & BHO) TDHPLH - 1.2 2 - 3 µs Refresh Pulse Width (ALO & BLO) TREF-PW 375 580 900 350 950 ns RDEL = 10K TRUTH TABLE INPUT OUTPUT ALI, BLI AHI, BHI VDDUV VHBUV DIS ALO, BLO AHO, BHO X X X X 1 0 0 X X 1 X X 0 0 0 X 0 1 0 0 0 1 X 0 X 0 1 0 0 1 0 0 0 0 1 0 0 0 0 0 0 0 NOTE: X signifies that input can be either a “1” or “0”. 5 FN3676.4 January 3, 2006 HIP4082 Pin Descriptions PIN NUMBER SYMBOL DESCRIPTION 1 BHB B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to this pin. 2 BHI B High-side Input. Logic level input that controls BHO driver (Pin 16). BLI (Pin 3) high level input overrides BHI high level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides BHI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). 3 BLI B Low-side Input. Logic level input that controls BLO driver (Pin 14). If BHI (Pin 2) is driven high or not connected externally then BLI controls both BLO and BHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin 8) high level input overrides BLI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). 4 ALI A Low-side Input. Logic level input that controls ALO driver (Pin 13). If AHI (Pin 7) is driven high or not connected externally then ALI controls both ALO and AHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin 8) high level input overrides ALI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). 5 DEL Turn-on DELay. Connect resistor from this pin to VSS to set timing current that defines the dead time between drivers. All drivers turn-off with no adjustable delay, so the DEL resistor guarantees no shoot-through by delaying the turn-on of all drivers. The voltage across the DEL resistor is approximately Vdd -2V. 6 VSS Chip negative supply, generally will be ground. 7 AHI A High-side Input. Logic level input that controls AHO driver (Pin 10). ALI (Pin 4) high level input overrides AHI high level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides AHI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). 8 DIS DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). 9 AHB A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to this pin. 10 AHO A High-side Output. Connect to gate of A High-side power MOSFET. 11 AHS A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 12 VDD Positive supply to control logic and lower gate drivers. De-couple this pin to VSS (Pin 6). 13 ALO A Low-side Output. Connect to gate of A Low-side power MOSFET. 14 BLO B Low-side Output. Connect to gate of B Low-side power MOSFET. 15 BHS B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 16 BHO B High-side Output. Connect to gate of B High-side power MOSFET. 6 FN3676.4 January 3, 2006 HIP4082 Timing Diagrams X = A OR B, A AND B HALVES OF BRIDGE CONTROLLER ARE INDEPENDENT TLPHL THPHL DIS=0 and UV XLI XHI XLO XHO THPLH TLPLH TR (10% - 90%) TF (10% - 90%) FIGURE 1. INDEPENDENT MODE DIS=0 and UV XLI XHI = HI OR NOT CONNECTED XLO XHO FIGURE 2. BISTATE MODE TDLPLH DIS or UV TDIS TREF-PW XLI XHI XLO XHO TDHPLH FIGURE 3. DISABLE FUNCTION 7 FN3676.4 January 3, 2006 HIP4082 Performance Curves 16 200kHz 15 3.25 VDD = 16V 3 IDD SUPPLY CURRENT (mA) IDD SUPPLY CURRENT (mA) 3.5 VDD = 15V 2.75 2.5 VDD = 12V 2.25 VDD = 10V 2 VDD = 8V 1.75 1.5 -60 -40 -20 14 13 12 11 10 100kHz 9 8 50kHz 7 6 10kHz 5 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) 120 4 140 -60 1.925 7 PEAK GATE CURRENT (A) LOADED, NL BIAS CURRENTS (mA) 8 6 5 4 1000pF LOAD 3 NO LOAD 2 -20 100 FREQUENCY (kHz) 150 140 2 1.5 SOURCE ISRC(BIAS) 1.25 SINK ISNK(BIAS) 1 0.75 0.815 0.5 50 120 1.75 1 0 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) FIGURE 5. VDD SUPPLY CURRENT vs TEMPERATURE AND SWITCHING FREQUENCY (1000pF LOAD) FIGURE 4. IDD SUPPLY CURRENT vs TEMPERATURE AND VDD SUPPLY VOLTAGE 0 -40 8 8 200 FIGURE 6. FLOATING (IXHB) BIAS CURRENT vs FREQUENCY AND LOAD 9 10 11 12 13 14 BIAS BIAS SUPPLY VOLTAGE (V) AT 25°C 15 15 FIGURE 7. GATE SOURCE/SINK PEAK CURRENT vs BIAS SUPPLY VOLTAGE AT 25°C 1.2 -40°C 1.1 -55°C 1.2 VDD-VOH (V) NORMALIZED GATE SINK/SOURCE CURRENT (A) 1.4 1 0°C 25°C 1 125°C 150°C 0.8 0.9 0.6 0.8 -75 -50 -25 0 25 50 75 100 JUNCTION TEMPERATURE (°C) FIGURE 8. GATE CURRENT vs TEMPERATURE, NORMALIZED TO 25°C 8 125 150 8 9 10 11 12 13 VDD SUPPLY VOLTAGE (V) 14 15 FIGURE 9. VDD-VOH vs BIAS VOLTAGE TEMPERATURE FN3676.4 January 3, 2006 HIP4082 Performance Curves (Continued) 8 VDD, BIAS SUPPLY VOLTAGE (V) 1.4 VOL (V) 1.2 -40°C -55°C 0°C 25°C 1 0.8 125°C 150°C 0.6 8 9 10 11 12 13 VDD SUPPLY VOLTAGE (V) 14 LOWER U/V SET 6.5 6 UPPER U/V SET/RESET 5.5 -40 -20 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) DIS TO TURN-ON/OFF TIME (ns) 80 UPPER tON 70 60 UPPER tOFF LOWER tON 50 40 30 LOWER tOFF 20 -60 -40 -20 0 20 40 60 80 100 120 DISHTON 1000 DISHTOFF 100 DISLOFF DISLTON 10 140 160 -60 -40 -20 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 12. UPPER LOWER TURN-ON / TURN-OFF PROPAGATION DELAY vs TEMPERATURE 120 140 160 FIGURE 13. UPPER/LOWER DIS(ABLE) TO TURN-ON/OFF vs TEMPERATURE (°C) 2 2.5 TOTAL POWER DISSIPATION (W) LEVEL-SHIFT CURRENT (mA) 140 160 104 90 1.5 1 0.5 120 FIGURE 11. UNDERVOLTAGE TRIP VOLTAGES vs TEMPERATURE 100 PROPAGATION DELAYS (ns) 7 5 -60 15 FIGURE 10. VOL vs BIAS VOLTAGE AND TEMPERATURE LOWER U/V RESET 7.5 0 20 40 60 80 SWITCHING FREQUENCY (kHz) FIGURE 14. FULL BRIDGE LEVEL-SHIFT CURRENT vs FREQUENCY (kHz) 9 100 2 16 PIN DIP 1.5 SOIC 1 0.5 QUIESCENT BIAS COMPONENT 0 -60 -30 0 30 60 90 AMBIENT TEMPERATURE (°C) 120 150 FIGURE 15. MAXIMUM POWER DISSIPATION vs AMBIENT TEMPERATURE FN3676.4 January 3, 2006 HIP4082 Performance Curves (Continued) 104 90 VDD = 15V VDD = 12V VXHS-VSS DEAD TIME (ns) 85 VDD = 9V 1000 80 75 100 0 10 20 30 40 50 60 70 DEAD TIME RESISTANCE (kΩ) 80 90 100 FIGURE 16. DEAD-TIME vs DEL RESISTANCE AND BIAS SUPPLY (VDD) VOLTAGE 10 70 100 50 0 50 TEMPERATURE (°C) 100 150 FIGURE 17. MAXIMUM OPERATING PEAK AHS/BHS VOLTAGE vs TEMPERATURE FN3676.4 January 3, 2006 HIP4082 Dual-In-Line Plastic Packages (PDIP) N E16.3 (JEDEC MS-001-BB ISSUE D) E1 INDEX AREA 1 2 3 16 LEAD DUAL-IN-LINE PLASTIC PACKAGE N/2 INCHES -B- SYMBOL -AE D BASE PLANE -C- SEATING PLANE A2 A L D1 e B1 D1 eA A1 eC B 0.010 (0.25) M C L C A B S C eB NOTES: 1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control. MILLIMETERS MIN MAX MIN MAX A - A1 0.015 NOTES 0.210 - 5.33 4 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - B1 0.045 0.070 1.15 1.77 8, 10 C 0.008 0.014 0.204 0.355 - D 0.735 0.775 18.66 19.68 5 D1 0.005 - 0.13 - 5 E 0.300 0.325 7.62 8.25 6 E1 0.240 0.280 6.10 7.11 5 e 0.100 BSC 2.54 BSC - 3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication No. 95. eA 0.300 BSC 7.62 BSC 6 eB - 0.430 - 10.92 7 4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3. L 0.115 0.150 2.93 3.81 4 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . N 16 16 9 Rev. 0 12/93 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). 11 FN3676.4 January 3, 2006 HIP4082 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) N INDEX AREA H 0.25(0.010) M 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M INCHES E -B- 1 2 3 L SEATING PLANE -A- A D h x 45° -C- e A1 B C 0.10(0.004) 0.25(0.010) M C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3859 0.3937 9.80 10.00 3 E 0.1497 0.1574 3.80 4.00 4 e α B S 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N α NOTES: MILLIMETERS 16 0° 16 8° 0° 7 8° 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. Rev. 1 6/05 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 FN3676.4 January 3, 2006