IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND D IRF620 NOTE: TO-220AB IRF620 When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-196 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF620 200 200 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER BVDSS VGS = 0V, ID = 250µA, (Figure 10) 200 - - V Gate Threshold Voltage VGS(TH) VDS = VGS , ID = 250µA 2.0 - 4.0 V - - 25 µA - - 250 µA 5.0 - - A Zero Gate Voltage Drain Current SYMBOL IDSS TEST CONDITIONS VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time ID(ON) IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = ±20V - - ±100 nA VGS = 10V, ID = 2.5A, (Figures 8, 9) - 0.8 1.2 Ω 1.3 2.5 - S - 20 40 ns - 30 60 ns - 50 100 ns - 30 60 ns - 11 15 nC - 5.0 - nC - 6.0 - nC - 450 - pF VDS > ID(ON) x rDS(ON)MAX , ID = 2.5A (Figure 12) VDD = 100V, ID ≈ 5.0A, RG = 9.1Ω, RL = 20Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs VGS = 10V, ID = 5.0A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figure 14) Gate Charge is Essentially Independent of Operating Temperature Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 150 - pF Reverse Transfer Capacitance CRSS - 40 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 3.12 oC/W - - 62.5 oC/W Internal Drain Inductance LD VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) Measured from the Contact Modified MOSFET Screw on Tab to Center of Symbol Showing the Die Internal Devices Inductances Measured from the Drain D Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-197 Free Air Operation IRF620 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier ISDM D MIN TYP MAX UNITS - - 5.0 A - - 20 A G S Source to Drain Diode Voltage (Note 2) TJ = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 1.8 V trr TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns QRR TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC VSD Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 5A. Typical Performance Curves Unless Otherwise Specified 5 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 50 100 4 3 2 1 0 25 150 50 TC , CASE TEMPERATURE (oC) 75 100 150 125 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1.0 THERMAL IMPEDENCE ZθJC, NORMALIZED TRANSIENT POWER DISSIPATION MULTIPLIER 1.2 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-198 1 10 IRF620 Typical Performance Curves Unless Otherwise Specified (Continued) 10 100 10V 10 7V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10µs 100µs 1ms 1 10ms 100ms DC TJ = MAX RATED TC = 25oC SINGLE PULSE 0.1 6V 6 4 5V 2 4V 0 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 8 0 1000 10 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 5V 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1 VGS = 4V 0 0 4 2 8 6 10 8 6 4 TJ = 125oC TJ = 25oC TJ = -55oC 2 0 0 8 6 10 VG , GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 2.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1.5 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) 4 2 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = 10V 1.0 VGS = 20V 0.5 100 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON) MAX VGS = 8V VGS = 6V 2 60 FIGURE 5. OUTPUT CHARACTERISTICS 5 4 40 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA VGS = 10V 20 0 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 2A 1.4 1 0.6 0.2 0 5 10 15 ID , DRAIN CURRENT (A) NOTE: Heating effect of 2.0µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-199 20 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF620 Typical Performance Curves Unless Otherwise Specified (Continued) 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 1.15 800 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 600 CISS 400 COSS 200 CRSS 0.75 -40 0 40 80 120 0 160 10 0 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON) MAX TJ = 25oC 3 TJ = 125oC 2 1 0 0 2 4 6 8 10 TJ = 150oC 10 TJ = 150oC 1 TJ = 25oC 1 0 2 3 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 6A VDS = 40V 15 V20 DS = 100V 10 VDS = 160V 5 0 4 8 12 16 20 Qg , GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-200 50 TJ = 25oC ID , DRAIN CURRENT (A) 0 40 PULSE DURATION = 80µs 100 DUTY CYCLE = 0.5% MAX ISD , SOURCE TO DRAIN CURRENT (A) 4 30 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE TJ = -55oC VGS , GATE TO SOURCE (V) gfs, TRANSCONDUCTANCE (S) 5 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 4 IRF620 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-201 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF620 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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