INTERSIL DG442DY

DG441, DG442
Data Sheet
June 1999
Monolithic, Quad SPST, CMOS Analog
Switches
The DG441 and DG442 monolithic CMOS analog switches
are drop-in replacements for the popular DG201A and
DG202 series devices. They include four independent single
pole single throw (SPST) analog switches, TTL and CMOS
compatible digital inputs, and a voltage reference for logic
thresholds.
These switches feature lower analog ON resistance (<85Ω)
and faster switch time (tON < 250ns) compared to the
DG201A and DG202. Charge injection has been reduced,
simplifying sample and hold applications.
The improvements in the DG441 series are made possible by
using a high voltage silicon-gate process. An epitaxial layer
prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling 40VP-P signals. Power supplies may be singleended from +5V to +34V, or split from ±5V to ±20V.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±5V analog input range.
The switches in the DG441 and DG442 are identical,
differing only in the polarity of the selection logic.
Ordering Information
PART
NUMBER
TEMP. RANGE
(oC)
File Number
3281.5
Features
• ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . <1.6mW
• Fast Switching Action
- tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns
- tOFF (Max, DG441). . . . . . . . . . . . . . . . . . . . . . . . 120ns
• Low Charge Injection
• Upgrade from DG201A/DG202
• TTL, CMOS Compatible
• Single or Split Supply Operation
Applications
• Audio Switching
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
Functional Diagrams
PACKAGE
PKG. NO.
DG441DJ
-40 to 85
16 Ld PDIP
E16.3
DG441DY
-40 to 85
16 Ld SOIC
M16.15
DG442DJ
-40 to 85
16 Ld PDIP
E16.3
DG442DY
-40 to 85
16 Ld SOIC
M16.15
DG441
DG442
S1
IN1
D1
S2
IN2
Pinout
S1
IN1
D1
S2
IN2
D2
S3
DG441, DG442
(PDIP, SOIC)
TOP VIEW
IN3
D2
S3
IN3
D3
S4
IN1 1
16 IN2
D1 2
15 D2
S1 3
14 S2
V- 4
13 V+
GND 5
12 NC
S4 6
11 S3
D4 7
10 D3
IN4 8
9 IN3
1
IN4
D3
S4
IN4
D4
D4
SWITCHES SHOWN FOR LOGIC “1” INPUT
TRUTH TABLE
LOGIC
VIN
DG441
DG442
0
≤0.8V
ON
OFF
1
≥2.4V
OFF
ON
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
DG441, DG442
Schematic Diagram
(One Channel)
V+
S
VV+
INX
D
GND
1 PER DIE COMMON TO
EVERY CHANNEL
V-
Pin Descriptions
PIN
SYMBOL
DESCRIPTION
1
IN1
Logic Control for Switch 1
2
D1
Drain (Output) Terminal for Switch 1
3
S1
Source (Input) Terminal for Switch 1
4
V-
Negative Power Supply Terminal
5
GND
6
S4
Source (Input) Terminal for Switch 4
7
D4
Drain (Output) Terminal for Switch 4
8
IN4
Logic Control for Switch 4
9
IN3
Logic Control for Switch 3
10
D3
Drain (Output) Terminal for Switch 3
11
S3
Source (Input) Terminal for Switch 3
12
NC
No Internal Connection
13
V+
Positive Power Supply Terminal (Substrate)
14
S2
Source (Input) Terminal for Switch 2
15
D2
Drain (Output) Terminal for Switch 2
16
IN2
Logic Control for Switch 2
Ground Terminal (Logic Common)
2
DG441, DG442
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Digital Inputs, VS, VD (Note 1) . . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
Maximum Junction Temperature (Plastic Packages) . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
(Dual Supply) Test Conditions: V+ = +15V, V- = -15V, VIN = 2.4V, 0.8V, VANALOG = VS , VD,
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(oC)
MIN
(NOTE 3)
TYP
MAX
UNITS
25
-
150
250
ns
25
-
90
120
ns
DYNAMIC CHARACTERISTICS
RL = 1kΩ, CL = 35pF, VS = ±10V, (Figure 1)
Turn-ON Time, tON
Turn-OFF Time, tOFF
DG441
-
110
210
ns
Charge Injection, Q (Figure 2)
DG442
CL = 1nF, VG = 0V, RG = 0Ω
25
-
-1
-
pC
OFF Isolation (Figure 4)
RL = 50Ω, CL = 5pF, f = 1MHz
25
-
60
-
dB
25
-
-100
-
dB
Crosstalk (Channel-to-Channel) (Figure 3)
25
-
4
-
pF
Drain OFF Capacitance, CD(OFF)
Source OFF Capacitance, CS(OFF)
f = 1MHz, VANALOG = 0 (Figure 5)
25
-
4
-
pF
Channel ON Capacitance,
CD(ON) + CS(ON)
25
-
16
-
pF
DIGITAL INPUT CHARACTERISTICS
Input Current VIN Low, IIL
VIN Under Test = 0.8V, All Others = 2.4V
Full
-0.5
-0.00001
0.5
µA
Input Current VIN High, IIH
VIN Under Test = 2.4V, All Others = 0.8V
Full
-0.5
0.00001
0.5
µA
Full
-15
-
15
V
25
-
50
85
Ω
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON Resistance, rDS(ON)
IS = 10mA, VD = ±8.5V, V+ = 13.5V,
V- = -13.5V
Source OFF Leakage Current, IS(OFF)
V+ = 16.5V, V- = -16.5V, VD = ±15.5V,
VS = 15.5V
Drain OFF Leakage Current, ID(OFF)
V+ = 16.5V, V- = -16.5V, VS = VD = ±15.5V
Channel ON Leakage Current,
ID(ON) + IS(ON)
85
-
-
100
Ω
25
-0.5
0.01
0.5
nA
85
-5
-
5
nA
25
-0.5
0.01
0.5
nA
85
-5
-
5
nA
25
-0.5
0.08
0.5
nA
85
-10
-
10
nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 16.5V, V- = -16.5V, VIN = 0V or 5V
Negative Supply Current, IGround Current, IGND
3
Full
-
15
100
µA
25
-1
-0.0001
-
µA
Full
-5
-
-
µA
Full
-100
-15
-
µA
DG441, DG442
Electrical Specifications
(Single Supply) Test Conditions: V+ = 12V, V- = 0V, VIN = 2.4V, 0.8V, Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(oC)
MIN
(NOTE 3)
TYP
MAX
UNITS
25
-
300
450
ns
25
-
60
200
ns
25
-
2
-
pC
Full
0
-
12
V
25
-
100
160
Ω
Full
-
-
200
Ω
Full
-
15
100
µA
25
-1
-0.0001
-
µA
Full
-100
-0.0001
-
µA
Full
-100
-15
-
µA
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
RL = 1kΩ, CL = 35pF, VS = 8V, (Figure 1)
Turn-OFF Time, tOFF
Charge Injection, Q (Figure 2)
CL = 1nF, VG = 6V, RG = 0Ω
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON Resistance,
rDS(ON)
IS = 10mA, VD = 3V, 8V V+ = 10.8V
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 13.2V, V- = 0V, VIN = 0V or 5V
Negative Supply Current, I-
Ground Current, IGND
NOTES:
3. Typical values are for DESIGN AID ONLY, not guaranteed nor production tested.
Test Circuits and Waveforms
VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing
edge of the output waveform.
V+
tr < 20ns
tf < 20ns
3V
LOGIC
INPUT
50%
SWITCH
INPUT
0V
tOFF
SWITCH
OUTPUT
80%
VO
IN1
SWITCH
INPUT VS
VO
D1
S1
80%
LOGIC
INPUT
3V
RL
CL
GND
V-
0V
tON
NOTE: Logic input waveform is inverted for switches that have the
opposite logic sense.
Repeat test for Channels 2, 3 and 4.
For load conditions, see Specifications. CL includes fixture and stray
capacitance.
RL
V O = V S -----------------------------------R L + r DS ( ON )
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1B. TEST CIRCUIT
FIGURE 1. SWITCHING TIMES
4
DG441, DG442
Test Circuits and Waveforms
(Continued)
V+
SWITCH
OUTPUT
∆VO
INX
(DG441)
OFF
RG
D1
VO
OFF
ON
VG
CL
V-
INX
(DG442)
VIN = 3V
ON
Q = ∆VO x CL
OFF
OFF
GND
FIGURE 2A. MEASUREMENT POINTS
FIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
+15V
C
SIGNAL
GENERATOR 10dBm
+15V
V+
C
SIGNAL
GENERATOR 10dBm
VS
VD
50Ω
IN1
IN2
0V, 2.4V
V+
VS
0V, 2.4V
VD
ANALYZER
INX
C
RL
RL
V-
GND
VD
ANALYZER
NC
V-
-15V
GND
FIGURE 3. CROSSTALK TEST CIRCUIT
C
-15V
FIGURE 4. OFF ISOLATION TEST CIRCUIT
+15V
C
V+
VS
INX
IMPEDANCE
ANALYZER
0V, 2.4V
VD
f = 1MHz
V-
GND
C
-15V
FIGURE 5. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT
5
0V, 2.4V
DG441, DG442
Application Information
GAIN ERROR IS DETERMINED ONLY BY THE RESISTOR TOLERANCE.
OP AMP OFFSET AND CMRR WILL LIMIT ACCURACY OF CIRCUIT.
VIN
+15V
FET INPUT
7 -15V
4
OP AMP 3
6
2
VOUT
+15V
13
3
2
GAIN1
AV = 1
1
R1
90kΩ
15
GAIN2
AV = 10
14
+15V
16
R2
5kΩ
10
GAIN3
AV = 20
11
9
R3
4kΩ
+
-
SX
DX
8
CH
R4
1kΩ
V4
5
-
-15V
INX
GND
VOUT
+
6
7
GAIN4
AV = 100
1/4 DG442
VIN
1 = SAMPLE
0 = HOLD
-15V
V OUT
R1 + R2 + R3 + R4
---------------- = ------------------------------------------------- = 100 with SW 4 closed
V IN
R4
FIGURE 6. PRECISION WEIGHTED RESISTOR
PROGRAMMABLE GAIN AMPLIFIER
FIGURE 7. OPEN LOOP SAMPLE AND HOLD
Typical Performance Curves
100
80
±5V
V+ = +15V
V- = -15V
70
80
60
±8V
±10V
60
rDS(ON) (Ω)
rDS(ON) (Ω)
125oC
±12V
40
±15V
±20V
50
40
20
10
0
VD (V)
FIGURE 8. rDS(ON) vs VD AND POWER SUPPLY VOLTAGE
6
20
25oC
30
20
0
-20
85oC
0
-15
0oC
-40oC
-55oC
0
VD (V)
FIGURE 9. rDS(ON) vs VD AND TEMPERATURE
15
DG441, DG442
Typical Performance Curves
(Continued)
140
300
V+ = +12V
V- = 0V
120
125oC
100
85oC
V- = 0V
250
V+ = +5V
80
rDS(ON) (Ω)
rDS(ON) (Ω)
200
25oC
60
0oC
40oC
-55oC
40
+8V
+10V
100
+12V
+15V
+20V
50
20
0
150
0
0
6
VD (V)
12
FIGURE 10. rDS(ON) vs VD AND TEMPERATURE
(SINGLE 12V SUPPLY)
0
10
VD (V)
20
FIGURE 11. rDS(ON) vs VD AND SINGLE SUPPLY VOLTAGE
105
105
104
104
I+, IGND
103
I+, I-, IGND (nA)
IIN (pA)
103
102
10
102
10
1
-(I-)
0.1
1
0.01
0.1
-55
0
50
TEMPERATURE (oC)
100
125
0.001
-55
FIGURE 12. INPUT CURRENT vs TEMPERATURE
0
50
TEMPERATURE (oC)
100
125
FIGURE 13. SUPPLY CURRENT vs TEMPERATURE
140
50
120
40
CROSSTALK
V+ = +15V
V- = -15V
SINGLE SUPPLY
V+ = +12V
V- = 0V
30
100
20
Q (pC)
(-dB)
80
OFF ISOLATION
60
10
0
CL = 10nF
CL = 1nF
40
-10
20
0
100
V+ = +15V
V- = -15V
PGEN = 10dBm
1K
CL = 10nF
CL = 1nF
-20
10K
100K
FREQUENCY (Hz)
1M
10M
FIGURE 14. CROSSTALK AND OFF ISOLATION vs FREQUENCY
7
-30
-10
-5
0
VS (V)
5
FIGURE 15. CHARGE INJECTION vs SOURCE VOLTAGE
10
DG441, DG442
Typical Performance Curves
(Continued)
160
160
V+ = +15V
V- = -15V
tON (DG441)
140
140
tON
120
tON (DG442)
100
tON, tOFF (ns)
tON, tOFF (ns)
120
tOFF (DG442)
80
100
80
tOFF
60
60
tOFF (DG441)
40
40
20
20
3
2
4
10
5
12
VIN (V)
FIGURE 16. SWITCHING TIMES vs INPUT VOLTAGE
14
16
18
SUPPLY VOLTAGE (±V)
20
22
FIGURE 17. SWITCHING TIME vs POWER SUPPLY VOLTAGE
(DG441)
2.4
20
IS(OFF) , ID(OFF)
0
1.6
-40
VIN (V)
IS, ID (pA)
-20
IS(ON) + ID(ON)
0.8
-60
V+ = +15V
V- = -15V
FOR I(OFF) , VD = -VS
-80
-100
-15
0
-10
-5
0
VS , VD (V)
5
10
0
15
FIGURE 18. LEAKAGE CURRENT VS ANALOG VOLTAGE
5
10
15
SUPPLY VOLTAGE (±V)
20
FIGURE 19. SWITCHING THRESHOLD vs SUPPLY VOLTAGE
25
20
V+ = +15V
V- = -15V
V+ = +12V
V- = 0V
CS(ON) + CD(ON)
20
15
CS , D (pF)
CS , D (pF)
CS(ON) + CD(ON)
15
10
CS(OFF) , CD(OFF)
5
CS(OFF) , CD(OFF)
5
10
0
0
-15
-10
-5
0
VA (V)
5
10
FIGURE 20. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE
8
15
0
6
VA (V)
FIGURE 21. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE (SINGLE 12V SUPPLY)
12
DG441, DG442
Typical Performance Curves
(Continued)
10
400
V+ = +12V
V- = 0V
IS(OFF) , ID(OFF)
tON (DG441)
0
tON, tOFF (ns)
IS , ID (pA)
300
-10
-20
tON (DG442)
200
IS(ON) + ID(ON)
100
V+ = +12V
V- = 0V
FOR ID , VS = 0
FOR IS , VD = 0
-30
-40
0
6
VS , VD (V)
12
tOFF (DG442)
tOFF (DG441)
0
2
3
FIGURE 22. SOURCE/DRAIN LEAKAGE CURRENTS
(SINGLE 12V SUPPLY)
FIGURE 23. SWITCHING TIME vs INPUT VOLTAGE
(SINGLE 12V SUPPLY)
500
V- = 0V
400
tON, tOFF (ns)
tON
300
200
100
tOFF
0
8
10
12
14
16
18
POSITIVE SUPPLY (V)
20
22
FIGURE 24. SWITCHING TIME vs SINGLE SUPPLY VOLTAGE (DG441)
9
4
VIN (V)
5
DG441, DG442
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
2160µm x 1760µm x 485µm
Type: Nitride
Thickness: 8kÅ ±1kÅ
METALLIZATION:
WORST CASE CURRENT DENSITY:
Type: SiAl
Thickness: 12kÅ ±1kÅ
9.1 x 104 A/cm2
Metallization Mask Layout
DG441, DG442
D1
IN1
IN2
(2)
(1)
(16)
(15) D2
S1 (3)
(14) S2
V- (4)
(13) V+ SUBSTRATE
(12) NC
GND (5)
(11) S3
S4 (6)
(7)
D4
(8)
IN4
(9)
IN3
(10)
D3
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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