友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150804 Issue Date Aug-26-2015 2N60-C規格書變更(Datasheet Change of 2N60-C) Page 1 of 2 變更主旨(TITLE): 調整2N60-C部份測試參數內容 Adjusting the electrical characteristic, test condition and typical characteristic of 2N60-C. 變更類別(CATEGORY): Design ■Testing Process Raw Material Manufacturing Site Packing/Shipping/Labeling ■Other Datasheet 變更說明(DESCRIPTION OF CHANGE): 為提昇客戶的適用性，本公司依最新驗證資料，調整2N60-C量測的測試參數內容，說明如下： UTC is notifying customers about a Data Sheet update for the 2N60-C device. This change will enhance customer's accommodation according to latest verification data. 1. dv/dt從4.5 V/ns調為3.7 V/ns. The dv/dt in Notes 4 is adjusted from 4.5 V/ns to 3.7 V/ns 調整前(Original) Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns dv/dt 3.7 V/ns 調整後(Update) Peak Diode Recovery dv/dt (Note 4) 2. VGS(TH), RDS(ON), tD(ON), tR, tD(OFF), tF, QG, QGS, QGD, ISD , trr, QRR調整 調整前(Original) PARAMETER ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL VGS(TH) RDS(ON) TEST CONDITIONS VDS = VGS, ID = 250μA VGS = 10V, ID =1A SWITCHING PARAMETERS Turn-On Delay Time tD (ON) VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, Gate-Source Charge QGS ID=2.4A (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 2.5 3.6 40 35 90 20 15 4.2 1.5 4.5 4.2 V Ω 60 55 120 40 30 ns ns ns ns nC nC nC 180 0.72 ns μC 1 QR-0205-01.D 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150804 Issue Date Aug-26-2015 2N60-C規格書變更(Datasheet Change of 2N60-C) Page 2 of 2 調整後(Update) PARAMETER ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL VGS(TH) RDS(ON) TEST CONDITIONS VDS = VGS, ID = 250μA VGS = 10V, ID =1A SWITCHING PARAMETERS Turn-On Delay Time tD (ON) VDD =30V, ID =0.5A, RG=25Ω VGS=10V (Note 1, 2) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS IG = 100μA (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, ISD = 2.0A, Reverse Recovery Time trr di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 2.0 4.0 4.6 V Ω 30 25 90 25 35 3.5 2.5 ns ns ns ns nC nC nC 275 1.1 ns μC 品質驗證(QUALIFICATION AND RELIABILITY DATA): 本項變更不影響原有品質可靠性。 No change to quality and reliability in the final product. 生效日期(EFFECTIVE DATE OF CHNAGE): Nov-25-2015 若 貴公司未於收到本通知書起30日內，另以書面提出要求，本公司將視同 貴公司已同意 本項變更。 UTC will consider this change approved unless specific requests are addressed in writing within 30 days of receipt of this PCN. 適用範圍(APPLICABLE PRODUCTS): 2N60-C 友順對此變更所引起之不便表達致歉，如果對本變更有任何問題，請與我們的業務代表或經銷 商聯絡。 We apologize for any inconvenience causing from this change, if you have any questions concerning this change, please contact your local sales or UTC’s sales representative. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QR-0205-01.D