HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. File Number 4830 Features • >100kHz Operation At 390V, 30A • 200kHz Operation At 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER Model www.intersil.com Packaging JEDEC STYLE TO-247 E C Formerly Developmental Type TA49345. G Ordering Information PART NUMBER PACKAGE HGTG30N60A4D NOTE: TO-247 BRAND COLLECTOR (FLANGE) 30N60A4D When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG30N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL HGTG30N60A4D, 600 UNITS V 75 60 240 ±20 ±30 150A at 600V 463 3.7 -55 to 150 260 A A A V V W W/oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. TJ = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 600V IC = 30A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC IC = 250µA, VCE = 600V Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH, VCE = 600V VGEP Gate to Emitter Plateau Voltage MIN TYP MAX UNITS 600 - - V - - 250 µA - - 2.8 mA - 1.8 2.6 V - 1.6 2.0 V 4.5 5.2 7.0 V - - ±250 nA 150 - - A IC = 30A, VCE = 300V - 8.5 - V On-State Gate Charge Qg(ON) IC = 30A, VCE = 300V VGE = 15V - 225 270 nC VGE = 20V - 300 360 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3Ω, L = 200µH, Test Circuit (Figure 24) - 25 - ns Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI - ns - µJ EON2 - 600 - µJ EOFF - 240 350 µJ td(ON)I trI td(OFF)I tfI Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr 2 ns 38 Turn-Off Energy (Note 3) Current Fall Time ns - 280 Turn-On Energy (Note 2) Current Turn-Off Delay Time - 150 - EON1 Current Rise Time 12 - Turn-On Energy (Note 2) Current Turn-On Delay Time - IGBT and Diode at TJ = 125oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3Ω, - 24 - ns - 11 - ns - 180 200 ns L = 200µH, Test Circuit (Figure 24) - 58 70 ns - 280 - µJ - 1000 1200 µJ - 450 750 µJ IEC = 30A - 2.2 2.5 V IEC = 30A, dIEC/dt = 200A/µs - 40 55 ns IEC = 1A, dIEC/dt = 200A/µs - 30 42 ns HGTG30N60A4D TJ = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS IGBT - - 0.27 oC/W Diode - - 0.65 oC/W NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150 200 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 500µH 150 100 50 0 0 TC , CASE TEMPERATURE (oC) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fMAX, OPERATING FREQUENCY (kHz) 500 300 TC VGE 75oC 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.27oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V 30 3 10 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 3 60 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 700 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 900 18 VCE = 390V, RG = 3Ω, TJ = 125oC 800 16 14 700 ISC 12 600 10 500 8 400 tSC 300 6 4 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 200 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 60 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTG30N60A4D 50 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 40 30 20 TJ = 125oC 10 TJ = 25oC TJ = 150oC 0 0 1.5 2.0 0.5 1.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 125oC, VGE = 12V, VGE = 15V 2000 1500 1000 0 TJ = 25oC, VGE = 12V, VGE = 15V 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 125oC 10 TJ = 150oC 0 0.5 1.0 1.5 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 RG = 3Ω, L = 200µH, VCE = 390V 1200 1000 800 TJ = 125oC, VGE = 12V OR 15V 600 400 200 TJ = 25oC, VGE = 12V OR 15V 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 100 RG = 3Ω, L = 200µH, VCE = 390V RG = 3Ω, L = 200µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 12V 32 80 30 28 26 24 TJ = 125oC, VGE = 15V, VGE = 12V 60 TJ = 25oC, VGE = 12V 40 20 TJ = 25oC, TJ = 125oC, VGE = 15V 22 20 TJ = 25oC 0 60 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 20 0 0 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 34 30 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 3000 500 40 1400 RG = 3Ω, L = 200µH, VCE = 390V 2500 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 2.5 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3500 50 TJ = 25oC, VGE = 15V 0 0 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4 60 0 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 60 HGTG30N60A4D Unless Otherwise Specified (Continued) 220 70 RG = 3Ω, L = 200µH, VCE = 390V 200 RG = 3Ω, L = 200µH, VCE = 390V 60 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) Typical Performance Curves 180 160 140 TJ = 125oC, VGE = 12V OR 15V 50 40 TJ = 25oC, VGE = 12V OR 15V 30 VGE = 12V, VGE = 15V, TJ = 25oC 120 0 10 20 30 40 50 20 60 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 15.0 350 DUTY CYCLE < 0.5%, VCE = 10V 300 PULSE DURATION = 250µs TJ = 25oC 250 200 TJ = 125oC TJ = -55oC 100 50 0 6 7 8 9 10 11 VGE, GATE TO EMITTER VOLTAGE (V) 2 ICE = 30A ICE = 15A 0 125 75 100 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE 5 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ICE = 60A 50 60 VCE = 600V VCE = 400V 10.0 7.5 VCE = 200V 5.0 2.5 0 50 100 150 200 250 FIGURE 14. GATE CHARGE WAVEFORMS 4 25 50 QG , GATE CHARGE (nC) ETOTAL = EON2 + EOFF 1 40 12.5 0 12 RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V 3 30 IG(REF) = 1mA, RL = 15Ω, TJ = 25oC FIGURE 13. TRANSFER CHARACTERISTIC 5 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 150 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 16 12 8 ICE = 60A 4 ICE = 30A ICE = 15A 0 3 10 100 300 RG, GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGTG30N60A4D C, CAPACITANCE (nF) 10 Unless Otherwise Specified (Continued) FREQUENCY = 1MHz 8 6 CIES 4 2 COES CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.3 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 2.2 2.1 2.0 ICE = 60A 1.9 ICE = 30A 1.8 ICE = 15A 1.7 10 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 30 dIEC/dt = 200A/µs 90 trr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 13 14 15 16 100 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs 25 25oC 125oC 20 15 10 5 125oC trr 80 70 60 125oC ta 50 25oC trr 40 125oC tb 30 20 25oC ta 10 25oC tb 0 0 0.5 1.0 2.0 1.5 0 2.5 10 5 VEC , FORWARD VOLTAGE (V) IEC = 30A, VCE = 390V 40 125oC tb 30 25oC ta 20 25oC tb 10 0 200 300 400 500 600 700 800 900 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT 6 1000 Qrr , REVERSE RECOVERY CHARGE (nC) 50 25 20 30 FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT 60 125oC ta 15 IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP trr , RECOVERY TIMES (ns) 12 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 35 0 11 VGE, GATE TO EMITTER VOLTAGE (V) 1400 VCE = 390V 125oC, IEC = 30A 1200 1000 125oC, IEC = 15A 800 600 25oC, IEC = 30A 400 25oC, IEC = 15A 200 0 200 300 400 500 600 700 800 900 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT 1000 HGTG30N60A4D ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.50 0.20 t1 0.10 10-1 PD 0.05 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP30N60A4D DIODE TA49373 90% 10% VGE EON2 EOFF L = 200µH VCE RG = 3Ω 90% DUT + - ICE VDD = 390V FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT 7 10% td(OFF)I tfI trI td(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG30N60A4D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. 8 fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG30N60A4D TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E SYMBOL ØP Q ØR D L1 b1 b2 c 3 3 2 J1 e MAX MILLIMETERS MIN MAX NOTES 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 e1 b MIN A e L 1 INCHES TERM. 4 ØS 0.219 TYP 0.438 BSC 5.56 TYP 11.12 BSC 4 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 2 e1 5 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - LEAD 1 - GATE ØR 0.195 0.205 4.96 5.20 - LEAD 2 - COLLECTOR ØS 0.260 0.270 6.61 6.85 - LEAD 3 - EMITTER TERM. 4 - COLLECTOR NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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