Datasheet

UNISONIC TECHNOLOGIES CO., LTD
88NXX
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR

DESCRIPTION
The UTC 88NXX is a high-precision voltage detector developed
basing on CMOS technology. The detection voltage is fixed internally. A
time delayed reset can be accomplished with an external
capacitor. N-ch open-drain output form is available.
The UTC 88NXX is generally used for power supply monitor of
portable equipment such as notebook PCs, digital still cameras, PDAs,
and mobile phones, constant voltage power monitor of cameras, video
equipment and communication equipment, and power monitor or reset of
CPUs and microcomputers.

FEATURES
* Extremely Low Current Dissipation :
1.2μA Typ. (Detection Voltage ≥ 1.5 V @ VDD=3.5 V)
* ±2.0 % Accuracy Detection Voltage
* Hysteresis Characteristics: 5% TYP
* Detection Voltage varies from 1.5V to 6.0V with 0.1V step
* Output Forms: N-ch open-drain output (when it is in Active-Low)

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
88NXXL-AD4-R
88NXXG-AD4-R
88NXXG-AF5-R
Note: XX: Output Voltage, refer to Marking Information.
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Package
Packing
SOT-143
SOT-25
Tape Reel
Tape Reel
1 of 8
QW-R502-368.G
88NXX

CMOS IC
MARKING INFORMATION
PACKAGE
SOT-143
SOT-25
VOLTAGE CODE
14:
18:
21:
24:
27:
28:
29:
30:
33:
MARKING
1.4V
1.8V
2.1V
2.4V
2.7V
2.8V
2.9V
3.0V
3.3V
5
MXXG
1

2
Voltage Code
3
PIN CONFIGURATION
VOUT
4
CD
3
1
2
VSS
VDD
For SOT-25

4
For SOT-143
PIN DESCRIPTION
PIN NO
PIN NAME
DESCRIPTION
SOT-143
SOT-25
4
1
VOUT
Voltage Detection Output Pin
2
2
VDD
Voltage Input Pin
1
3
VSS
GND Pin
4
NC
No Connection (Note)
3
5
CD
Connection Pin For Delay Capacitor
Note: The NC pin is electrically open and can be connected to VDD or VSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-368.G
88NXX

CMOS IC
BLOCK DIAGRAM
VDD
+
-
Delay
circuit
VOUT
VREF
VSS
CD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-368.G
88NXX

CMOS IC
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
Power Supply Voltage
CD pin Input Voltage
Output Voltage
Output Current
RATINGS
UNIT
12
V
VSS -0.3 ~ VDD+0.3
V
VSS -0.3 ~ VSS +12
V
50
mA
SOT-143
150
mW
Power Dissipation
PD
SOT-25
250
mW
Operating Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDD - VSS
VCD
VOUT
IOUT
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Detection Voltage: 1.4V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
∆ - VDET
Detection Voltage Temperature
∆
Ta
× - VDET
Coefficient (Note 2)
Delay Time
tD
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD= 2.0V
0.95
Output transistor
Nch, VDS=0.5V,VDD=0.95V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD= 2V, CD=4.7 nF
0.23
MAX
-VDET(S)
×1.02
-VDET
×0.08
2.5
10.0
0.64
20
V
V
μA
V
mA
0.1
±100
UNIT
μA
±350 ppm/°C
42
ms
MAX
UNIT
Detection Voltage: 1.8V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
∆ - VDET
Detection Voltage Temperature
∆Ta × - VDET
Coefficient (Note 2)
Delay Time
tD
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=3.5V
0.95
Output transistor
Nch, VDS=0.5V,VDD=1.2V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=3.5V, CD=4.7 nF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
0.59
-VDET(S)
×1.02
-VDET
×0.08
2.8
10.0
1.36
20
V
μA
V
mA
0.1
±100
V
μA
±350 ppm/°C
42
ms
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
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)
Detection Voltage: 2.1V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
∆ - VDET
Detection Voltage Temperature
∆Ta × - VDET
Coefficient (Note 2)
Delay Time
tD
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=3.5 V
0.95
Output transistor
Nch, VDS=0.5V, VDD=1.2V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=3.5V, CD=4.7 nF
0.59
MAX
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
1.36
20
V
V
μA
V
mA
0.1
±100
UNIT
μA
±350 ppm/°C
42
ms
MAX
UNIT
Detection Voltage: 2.4V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
PARAMETER
Output Current
IOUT
3
Leakage Current
ILEAK
3
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
∆ - VDET
∆Ta × - VDET
tD
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=3.5V
0.95
Output transistor
Nch, VDS=0.5V, VDD=1.2V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=3.5V, CD=4.7 nF
0.59
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
1.36
20
V
μA
V
mA
0.1
±100
V
μA
±350 ppm/°C
42
ms
MAX
UNIT
Detection Voltage: 2.7V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
∆ - VDET
∆Ta × - VDET
tD
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=4.5V
0.95
Output transistor
Nch, VDS=0.5V, VDD=2.4V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=4.5V, CD=4.7 nF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
2.88
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
4.98
12
V
μA
V
mA
0.1
±100
V
μA
±350 ppm/°C
34
ms
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QW-R502-368.G
88NXX

CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)
Detection Voltage: 2.8V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
∆ - VDET
∆Ta × - VDET
tD
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=4.5V
0.95
Output transistor
Nch, VDS=0.5V, VDD=2.4V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=4.5V, CD=4.7 nF
2.88
MAX
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
4.98
12
V
V
μA
V
mA
0.1
±100
UNIT
μA
±350 ppm/°C
34
ms
MAX
UNIT
Detection Voltage: 2.9V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
PARAMETER
Output Current
IOUT
3
Leakage Current
ILEAK
3
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
∆ - VDET
∆Ta × - VDET
tD
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=4.5 V
0.95
Output transistor
Nch, VDS=0.5V, VDD=2.4V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=4.5V, CD=4.7 nF
2.88
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
4.98
12
V
μA
V
mA
0.1
±100
V
μA
±350 ppm/°C
34
ms
MAX
UNIT
Detection Voltage: 3.0V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
∆ - VDET
∆Ta × - VDET
tD
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=4.5 V
0.95
Output transistor
Nch, VDS=0.5V, VDD=2.4V
Output transistor
Nch, VDS=10V, VDD=10V
1
TA=-40°C ~ +85°C
4
VDD=4.5V, CD=4.7 nF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
2.88
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
4.98
12
V
μA
V
mA
0.1
±100
V
μA
±350 ppm/°C
34
ms
6 of 8
QW-R502-368.G
88NXX

CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)
Detection Voltage: 3.3V
SYMBOL
TEST
CIRCUIT
Detection Voltage (Note 1)
-VDET
1
Hysteresis Width
VHYS
1
Current Consumption
Operating Voltage
ISS
VDD
2
1
Output Current
IOUT
3
Leakage Current
ILEAK
3
PARAMETER
TEST CONDITIONS
MIN
TYP
-VDET(S)
-VDET(S)
×0.98
-VDET -VDET
×0.02 ×0.05
VDD=4.5V
0.95
Output transistor
Nch, VDS=0.5V, VDD=2.4V
Output transistor
Nch, VDS=10V, VDD=10V
2.88
MAX
-VDET(S)
×1.02
-VDET
×0.08
5
10.0
4.98
UNIT
V
V
μA
V
mA
0.1
μA
∆ - VDET
Detection Voltage Temperature
1
TA=-40°C ~ +85°C
±100 ±350 ppm/°C
∆Ta × - VDET
Coefficient (Note 2)
Delay Time
tD
4
VDD=4.5V, CD=4.7 nF
12
34
ms
-VDET: Actual detection voltage
Note: 1.
-VDET(S): Specified detection voltage
2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation:
 -VDET
 -V DET
[m V /  C] (1)  -VDET (T yp.)[V ]( 2 ) 
[ppm / C]( 3 )  1000
T A
 T A  -VDET
(1) Temperature change ratio of the detection voltage
(2) Specified detection voltage
(3) Detection voltage temperature coefficient
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-368.G
88NXX

CMOS IC
TEST CIRCUITS
100kΩ
VDD
VDD
V
88NXX Series
VSS
VOUT
CD
V
Fig.1
Fig.2
VDD
VDD
VDD
V
88NXX
Series
VSS
VOUT
CD
A
V
Fig.3
P.P.
VDS
88NXX Series
100kΩ
VOUT
Oscilloscope
VSS
CD
Fig.4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-368.G
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