High-reliability discrete products and engineering services since 1977 MCR63 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive forward and reverse blocking voltage(1) (TJ = 25 to +125°C, gate open) MCR63-1 MCR63-2 MCR63-3 MCR63-4 MCR63-5 MCR63-6 MCR63-7 MCR63-8 MCR63-9 MCR63-10 Symbol VRRM, VDRM Value 25 50 100 200 300 400 500 600 700 800 Unit Volts Non-repetitive peak reverse blocking voltage (t ≤ 5ms) (1) MCR63-1 MCR63-2 MCR63-3 MCR63-4 MCR63-5 MCR63-6 MCR63-7 MCR63-8 MCR63-9 MCR63-10 Forward current RMS VRSM IT(RMS) Peak surge current (one cycle, 60Hz, TC = -40 to +125°C) ITSM Circuit fusing considerations (t = 8.3ms) I2t 35 75 150 300 400 500 600 700 800 900 55 550 1255 Volts Amps Amps A2s Peak gate power PGM 20 Watts Average gate power (Pulse width ≤ 2µs) PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Forward peak gate voltage Reverse peak gate voltage VGFM VGRM 10 Volts Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C 30 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR63 SERIES SILICON CONTROLLED RECTIFIERS THERMAL CHARACTERISTICS Characteristic Symbol Thermal resistance, junction to case Pressfit Maximum RӨJC Unit °C/W 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TC = 25°C TC = 125°C Symbol IDRM, IRRM Forward “on” voltage (ITM = 175A peak) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 50Ω) TC = 25°C TC = -40°C IGT Gate trigger voltage (continuous dc) (VD = 12V, RL = 50Ω) TC = 25°C TC = -40°C (VD = Rated VDRM, RL = 1000Ω, T J = 125°C) Holding current (VD = 12V, RL = 50Ω, gate open) Forward voltage application rate (VD = rated VDRM, TJ = 125°C) VGT IH dv/dt Min. Max. Unit - 10 2 µA mA - 2 - 40 75 0.2 3 3.5 - - 60 50 - Volts mA Volts mA V/µs Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR63 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: Digi PF1 Marking: Body painted, alpha-numeric DIGI PF1 A F G H J K L Q Inches Min Max 0.501 0.505 0.160 0.085 0.095 0.060 0.070 0.300 0.350 1.050 0.670 0.055 0.085 Millimeters Min Max 12.730 12.830 4.060 2.160 2.410 1.520 1.780 7.620 8.890 26.670 17.020 1.400 2.160 Rev. 20130128