datasheet

SKiM401MLI07E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
650
V
Ts = 25 °C
317
A
Ts = 70 °C
250
A
400
A
ICnom
ICRM
VGES
SKiM® 4
tpsc
IGBT Modules
SKiM401MLI07E4
Tj
ICRM = 2xICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
800
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Ts = 25 °C
266
A
Ts = 70 °C
205
A
400
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2160
A
-40 ... 175
°C
Ts = 25 °C
266
A
Ts = 70 °C
205
A
300
A
Tj
Clamping diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 2xIFnom
600
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2160
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Typical Applications*
Visol
• UPS
• 3 Level Inverter
Characteristics
Symbol
IGBT
Remarks
• Case temperature limited to
Tc = 125°C max, recommended
Top = -40 … +150°C
VCE(sat)
VCE0
rCE
AC sinus 50 Hz, t = 1 min
Conditions
IC = 400 A
VGE = 15 V
chiplevel
VGE = 15 V
min.
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
Tj = 25 °C
1.4
2.1
m
2.1
3.0
m
5.8
6.5
V
Tj = 150 °C
VGE = 0 V
VCE = 650 V
Cres
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
V
Unit
ICES
VCE = 25 V
VGE = 0 V
2500
max.
VGE=VCE, IC = 6.4 mA
Coes
A
°C
typ.
VGE(th)
Cies
400
-40 ... 125
5
Tj = 25 °C
mA
Tj = 150 °C
mA
f = 1 MHz
24.67
nF
f = 1 MHz
1.54
nF
f = 1 MHz
0.73
nF
3200
nC
1.0

MLI
© by SEMIKRON
Rev. 0 – 01.10.2013
1
SKiM401MLI07E4
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCE = 300 V
IC = 400 A
RG on = 2 
RG off = 2 
di/dton = 1112 A/µs
di/dtoff = 3801 A/µs
min.
SKiM 4
max.
Unit
149.14
Tj = 150 °C
79.7
ns
Tj = 150 °C
3.32
mJ
Tj = 150 °C
420
ns
Tj = 150 °C
180
ns
Tj = 150 °C
20.91
mJ
0.25
K/W
Rth(j-s)
®
typ.
Tj = 150 °C
ns
Characteristics
IGBT Modules
SKiM401MLI07E4
Symbol
Conditions
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
min.
typ.
max.
Unit
Tj = 25 °C
1.5
1.9
V
Tj = 150 °C
1.6
2.0
V
1.04
1.236
V
0.85
0.99
V
1.2
1.8
m
1.8
2.6
m
Tj = 25 °C
0.95
Tj = 150 °C
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• UPS
• 3 Level Inverter
Tj = 25 °C
rF
0.8
Tj = 150 °C
A
IRRM
Qrr
Err
Rth(j-s)
24
VGE = -15 V
VR = 300 V
per diode
Clamping diode
VF = VEC IF = 300 A
VGE = 0 V
chiplevel
VF0
0.35
1.4
1.8
V
Tj = 150 °C
1.4
1.8
V
1.04
1.236
V
0.85
0.99
V
1.2
1.8
m
1.8
2.6
m
Tj = 25 °C
0.95
Tj = 25 °C
0.8
Tj = 150 °C
127
IRRM
Qrr
Err
Remarks
Rth(j-s)
• Case temperature limited to
Tc = 125°C max, recommended
Top = -40 … +150°C
RCC'+EE'
K/W
Tj = 25 °C
Tj = 150 °C
rF
µC
mJ
A
µC
VGE = -15 V
VR = 300 V
per diode
1.8
mJ
0.35
K/W
Module
LCE
terminal-chip
22
nH
Ts = 25 °C
1.35
m
Ts = 125 °C
1.75
m
Ms
to heat sink (M5)
2
3
Nm
Mt
to terminals M6
4
5
Nm
w
317
g
493 ± 5%

3550
±2%
K
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 k)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
MLI
2
Rev. 0 – 01.10.2013
© by SEMIKRON
SKiM401MLI07E4
Fig. 3: Typ. IGBT output characteristic, inclusive RCC'+ EE'
Fig. 6: Typ. turn-on /-off energy = f (IC)
Fig. 8: Typ. turn-on /-off energy = f (RG)
Fig. 10: Gate charge characteristic
Fig. 12: Typ. switching times vs. gate resistor RG
Fig. 14: Typ. switching times vs. IC
© by SEMIKRON
Rev. 0 – 01.10.2013
3
SKiM401MLI07E4
Fig. 15 Typ. IGBTs and DIODEs transient thermal
impedence
4
Rev. 0 – 01.10.2013
© by SEMIKRON
SKiM401MLI07E4
SKiM 4
MLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 01.10.2013
5