Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4101
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UTC UT4101 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.

SYMBOL
3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

UT4101G-AE2-R
UT4101G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-164.D
UT4101

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8.0
V
Continuous Drain Current (Note 3)
ID
-2.4
A
Pulsed Drain Current (Note 1, 2)
IDM
-7.5
A
Power Dissipation
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient

SYMBOL
θJA
RATING
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Gate Charge
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =-250µA
VDS =-16 V, VGS =0 V
VDS =0 V, VGS = ±8.0 V
-20
VGS(TH)
VDS =VGS, ID =-250 µA
VGS =-4.5 V, ID =-1.6 A
VGS =-2.5 V, ID =-1.3 A
VGS =-1.8 V, ID =-0.9 A
-0.40
RDS(ON)
TYP
-0.72
70
90
112
MAX
UNIT
-1.0
±100
V
µA
nA
-1.5
85
120
210
V
mΩ
mΩ
mΩ
CISS
COSS
CRSS
VDS =-10 V, VGS =0V,
f=1MHz
675
100
75
pF
pF
pF
tD(ON)
tR
tD(OFF)
tF
VGS=-4.5V,VDS=-10V,RG
=6.0 Ω,
ID =-1.6A
7.5
12.6
30.2
21.0
ns
ns
ns
ns
VDS=-10 V, VGS =-4.5 V, ID
=-1.6A
7.5
QG
Gate Source Charge
QGS
VDS=-10 V, ID =-1.6A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-2.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
VGS=0V, dISD/dt=100A/μs,
Reverse Recovery Time
tRR
IS =-1.6A
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
8.5
1.2
2.2
-0.82
12.8
1008
nC
nC
nC
-1.2
V
-2.4
A
15
ns
nC
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Drain to Source OnResistance,RDS(ON) (mΩ)
Drain to Source OnResistance,RDS(ON) (mΩ)
Drain Current,-ID (A)
Drain Current,-ID (A)

Leakage,-IDSS (nA)
Drain-to-Source Resistance
(Normalized),RDS(ON)
UT4101
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS
QW-R502-164.D
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UT4101
Time,t (ns)
Source Current,-IS (A)
Drain-to-Source Voltage,-VDS (V)
Gate-to-Source Voltage,-VGS (V)
TYPICAL CHARACTERISTICS(Cont.)
Capacitance,C (pF)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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