BiCMOS Process

ID. 06-09-0126
REV. Ø
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
WAFER FABRICATION FLOWCHART
(04/06/09)
INCOMING
Vendor:
Product:
Package:
Location of Wafer Fab:
Assembly:
Final Test:
Q.C. Test:
Source Accept Test:
Quality Contact:
FLOW CHART
Linear Technology Corporation
BICMOS Products
All Package Types
Linear Technology Corp., Milpitas, CA./ Camas, WA
Linear Technology Corporation, Penang, Malaysia or
approved assembly subcontractor
Linear Technology Corp., Milpitas, CA., Singapore
Linear Technology Corp., Milpitas, CA., Singapore
Linear Technology Corp., Milpitas, CA., Singapore
Naib Girn, LTC Milpitas, CA
(408) 432-1900 Ext. 2519
PROCESS STEP
INCOMING RAW
MATERIAL INSPECTION
INITIAL OXIDATION
DESCRIPTION
WAFERS
INSPECTION/TEST
CRITERIA
QUALITY INSPECTION AND GATE
MANUFACTURING PROCESS
QUALITY MONITOR / SURVEILLANCE
REWORK
METHOD &
EQUIPMENT
SAMPLING
PLAN
VISUAL: SCRATCHES,
PITS, HAZE, CRATERS,
DIMPLES,
CONTAMINATION
1 X INSPECTION
1.0% AQL TO
2.5 AQL LEVEL 1
OXYGEN/CARBON
MEASUREMENT
INFRARED
SPECTROMETER
S/S=2,
ACC = 0
RESISTIVITY /
CONDUCTIVITY
MAGNETRON V/I
METER
S/S=2,
ACC = 0
DIMENSIONAL
CALIPERS
2.5% AQL, LEVEL 1
THICKNESS AND
TAPER/BOW
DIAL THICKNESS
GAGE
2.5% AQL, LEVEL 1
ORIENTATION
BREAK TEST
S/S=1.
ACC = 0
SPC
TECHNIQUE
LOGBOOK
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
EACH BATCH
RETICLE
C OF C VERIFICATION
EACH PLATE
CHEMICALS
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
GASES
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
TARGETS
C OF C VERIFICATION
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS
PER WAFER
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS / CYCLE
TREND CHART
N-BURIED LAYER MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
PRODUCTION
LOG
N-BURIED LAYER IMPLANT
IMPLANT
DOSE CHECK
THEMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
LINEAR TECHNOLOGY CORPORATION
PAGE 1 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
N-BURIED LAYER DRIVE
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
FURNACE
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
SPC
TECHNIQUE
LOGBOOK
P-BURIED LAYER MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
PRODUCTION
LOG
P-BURIED LAYER IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
P-BURIED LAYER DRIVE
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
VISUAL
UV LAMP
INSPECT 2
WAFERS / RUN
EPI
DEPOSIT EPI ASM
INTERFERENCE
CONTRAST
MICROSCOPE
4 POINT PROBE
2 READING/PASS
X Bar & MOVING
R
FTIR
1 WAFER/LOT
LOGBOOK
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
TREND CHART
Rs
EPI THICKNESS
PAD OXIDATION
FURNACE
HV P-WELL MASK
RESIST MASK/
HF ETCH BATH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
HV P-WELL IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
P+ ISOLATION MASK
RESIST MASK/
HF ETCH BATH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
P+ ISOLATION IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
N+ SINKER MASK
RESIST MASK/
HF ETCH BATH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
N+ SINKER IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
LOGBOOK
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
LINEAR TECHNOLOGY CORPORATION
PAGE 2 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
N-WELL MASK
RESIST MASK
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
LV N-WELL IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
P-WELL MASK
RESIST MASK
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
LV P-WELL IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
NITRIDE DEPOSITION
LPCVD NITRIDE
DEPOSITION
VISUAL
UV LAMP
100%, MORE THAN
2 COLOR CHANGE
IS FAIL
TREND CHART
10X MICROSCOPE
2 WAFERS/CYCLE
<5 DEFECTS/PER
FIELD OF VIEW
NITRIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
WELL/SINKER DRIVE
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
ACTIVE MASK
RESIST MASK
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
PLASMA ETCH
P FIELD IMPLANT MASK
RESIST MASK
VISUAL INSPECTION
MICROSCOPE 400X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
BORON FIELD IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS / LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
LOCOS OXIDE
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
NANOSPEC
3 WAFERS/CYCLE
OXIDE THICKNESS
STRIP NITRIDE
SACRIFICIAL OXIDATION
STRIP OXIDE
H3PO4 ETCH BATH VISUAL
FURNACE
HF ETCH BATH
LINEAR TECHNOLOGY CORPORATION
UV LAMP
MICROSCOPE
INSPECTION
TREND CHART
LOGBOOK
THICKNESS
NANOSPEC
2 WAFERS /LOT
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS
PER WAFER
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS / CYCLE
TREND CHART
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
THICKNESS
NANOSPEC
LOGBOOK
2 WAFERS /LOT
PAGE 3 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
THICK GATE OXIDE
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
INSPECTION/TEST
CRITERIA
DESCRIPTION
FURNACE
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
TREND CHART
THIN OXIDE MASK
RESIST MASK/
HF ETCH BATH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PRODUCTION
LOG
THIN GATE OXIDE
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
OXIDE THICKNESS
ELLIPSOMETER
3 WAFERS/CYCLE
TREND CHART
VISUAL
UV LAMP
100%, MORE THAN
2 COLOR CHANGE
IS FAIL
10X MICROSCOPE
3 WAFERS/CYCLE
<5 DEFECTS/PER
FIELD OF VIEW
POLY THICKNESS
NANOSPEC
3 WAFERS/CYCLE
POLY 1 DEPOSITION
LPCVD
DEPOSITION
TREND CHART
PRODUCTION
LOG
VT MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
LT THRESHOLD ADJUST
IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
VTHV IMPLANT MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
HV THRESHOLD ADJUST
IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
WSIX
CVD
REFLECTIVITY
NANOSPEC
1 WF PER BATCH
LOT
10X MICROSCOPE
2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
Rs
Four Point Probe
1 WF PER BATCH
LOT
FINAL INSPECT
UV and
MICROSCOPE
PRODUCTION
5 WAFERS
LOG
“S” PATTERN SCAN
AT 200X AND 1000X
CRITICAL DIMENSION
SEM
1 WAFER (5 SPOTS) X BAR & R
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
POLY 1 MASK
RESIST MASK
PLASMA ETCH
NPN BASE MASK
RESIST MASK
NPN BASE IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
LINEAR TECHNOLOGY CORPORATION
TREND CHART
PRODUCTION
LOG
PRODUCTION
LOG
TREND CHART
PRODUCTION
LOG
TREND CHART
PRODUCTION
LOG
TREND CHART
PRODUCTION
LOG
PAGE 4 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
CAP OXIDE DEPOSITION
POLY 2 DEPOSITION
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
INSPECTION/TEST
CRITERIA
OXIDE DEPOSITION VISUAL
LPCVD
DEPOSITION
METHOD &
EQUIPMENT
SAMPLING
PLAN
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
THICKNESS
ELLIPSOMETER
3 WAFERS/CYCLE
VISUAL
UV LAMP
100%, MORE THAN
2 COLOR CHANGE
IS FAIL
10X MICROSCOPE
2 WAFERS/CYCLE
<5 DEFECTS/PER
FIELD OF VIEW
THICKNESS
NANOSPEC
3 WAFERS/CYCLE
SPC
TECHNIQUE
LOGBOOK
X-BAR & R
TREND CHART
PRODUCTION
LOG
POLY 2 MASK
RESIST MASK
PLASMA ETCH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
WSIX ANNEAL
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
PLDD MASK
RESIST MASK
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PLDD IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
NLDD MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
ANTI PUNCH THROUGH
IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
NLDD IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
TREND CHART
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
SPACER DEPOSITION
OXIDE DEPOSITION VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
THICKNESS
NANOSPEC
1 WAFER/CYCLE
PRODUCTION
LOG
TREND CHART
PRODUCTION
LOG
PRODUCTION
LOG
PRODUCTION
LOG
LOGBOOK
TREND CHART
SPACER ANNEAL
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
SPACER ETCH
PLASMA ETCH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
OXIDE MEASUREMENT
NANOSPEC
2 WAFER (3
SPOTS)
P+ S/D MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
P+ S/D IMPLANT
IMPLANT
DOSE CHECK
THERMAWAFE
2 WAFERS/LOT
VISUAL
MICROSCOPE
2 WAFERS/LOT
LINEAR TECHNOLOGY CORPORATION
LOGBOOK
LOGBOOK
PRODUCTION
LOG
X BAR & R
PRODUCTION
LOG
TREND CHART
PAGE 5 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
PRODUCTION
LOG
STRIP RESIST
RF PLASMA
SULFURIC ACID
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
N+ S/D IMPLANT MASK
RESIST MASK
DEVELOP INSPECT
UV and
MICROSCOPE
5 WAFERS
5 SPOTS AT 100X
N+ S/D IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
VISUAL
MICROSCOPE
2 WAFERS/LOT
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
THICKNESS
NANOSPEC
1 WAFER/CYCLE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
UV LAMP
3 WAFERS/RUN
LOGBOOK
STRIP RESIST
RF PLASMA
SULFURIC ACID
THIN OX DEPOSITION
OXIDE DEPOSITION VISUAL
S/D ANNEAL
FURNACE
BPSG DEPOSITION
OXIDE DEPOSITION VISUAL
PRODUCTION
LOG
TREND CHART
PRODUCTION
LOG
LOGBOOK
TREND CHART
TREND CHART
ANNEAL
FURNACE
THIN FILM
DEPOSITION
PVD SPUTTER
THIN FILM RESISTOR MASK RESIST MASK
THICKNESS
NANOSPEC
3 WAFERS/CYCLE
WT% B WT% P
BIORAD
WEEKLY
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
10X MICROSCOPE
2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
TREND CHART
Rs
FOUR POINT PROBE
1 WAFERS/LOT
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X AND 500X
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
THICKNESS
NANOSPEC
1 WAFER/CYCLE
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
PLASMA ETCH
SI-RICH OXIDE
CONTACT MASK
OXIDE DEPOSITION VISUAL
RESIST MASK
PLASMA ETCH
LOGBOOK
TREND CHART
THIN FILM CONTACT MASK
RESIST MASK HF
ETCHANT BATH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
TIN BARRIER
PVD SPUTTER
VISUAL
10X MICROSCOPE
2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
Rs
FOUR POINT PROBE
1 WAFERS/LOT
LINEAR TECHNOLOGY CORPORATION
PRODUCTION
LOG
PRODUCTION
LOG
PRODUCTION
LOG
TREND CHART
PAGE 6 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
BARRIER ANNEAL
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
METAL-1
DEPOSITION
PVD SPUTTER
VISUAL
UV LAMP
2 WAFERS/RUN
10X MICROSCOPE
2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
Rs
FOUR POINT PROBE
1 WAFERS/LOT
FINAL INSPECT
UV and
MICROSCOPE
PRODUCTION
5 WAFERS
LOG
“S” PATTERN SCAN
AT 200X AND 1000X
METAL MASK
RESIST MASK
PLASMA ETCH
ILD 1
OXIDE DEPOSITION VISUAL
SOG
SPIN-ON-GLASS
LOGBOOK
LOGBOOK
TREND CHART
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
LOGBOOK
THICKNESS
NANOSPEC
1 WAFER/CYCLE
TREND CHART
STRESS
STRESS GAGE
1 WAFER/CYCLE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
THICKNESS
NANOSPEC
1 WAFER/CYCLE
LOGBOOK
TREND CHART
SOG ANNEAL
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
SOG ETCHBACK
PLASMA ETCH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
OXIDE MEASUREMENT
NANOSPEC
2 WAFER (3
SPOTS)
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
LOGBOOK
THICKNESS
NANOSPEC
1 WAFER/CYCLE
TREND CHART
STRESS
STRESS GAGE
1 WAFER/CYCLE
FINAL INSPECT
UV and
MICROSCOPE
PRODUCTION
5 WAFERS
LOG
“S” PATTERN SCAN
AT 200X AND 1000X
VISUAL
UV LAMP
2 WAFERS/RUN
10X MICROSCOPE
2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
Rs
FOUR POINT PROBE
1 WAFERS/LOT
PRODUCTION
5 WAFERS
LOG
“S” PATTERN SCAN
AT 200X AND 1000X
ILD 2
VIA MASK
OXIDE DEPOSITION VISUAL
RESIST MASK
PLASMA ETCH
METAL-2
DEPOSITION
PVD SPUTTER
METAL MASK
RESIST MASK
PLASMA ETCH
FINAL INSPECT
UV and
MICROSCOPE
PASSIVATION DEPOSITION
OXIDE / PEN
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
THICKNESS
NANOSPEC
1 WAFER/CYCLE
INDEX OF REFRACTION
ELLIPSOMETER
1 WAFER/WEEK
DEPOSITION
LINEAR TECHNOLOGY CORPORATION
LOGBOOK
PRODUCTION
LOG
X BAR & R
LOGBOOK
LOGBOOK
TREND CHART
PAGE 7 OF 8
ID. 06-09-0126
FLOW CHART
REV. Ø
PROCESS STEP
WAFER FABRICATION FLOWCHART – BICMOS PROCESS
DESCRIPTION
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
PRODUCTION
LOG
PAD MASK
RESIST MASK
PLASMA ETCH
FINAL INSPECT
UV and
MICROSCOPE
5 WAFERS
“S” PATTERN SCAN
AT 200X
ALLOY
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 25 DEFECTS PER
WAFER
LOGBOOK
ELECTRICAL TEST
EVALUATE
ELECTRICAL
PARAMETERS
100%
LOGBOOK
LINEAR TECHNOLOGY CORPORATION
PAGE 8 OF 8
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