Two High Power Monolithic Switching Regulators Include Integrated 6A, 42V or 3.3A, 42V Power Switches

Two High Power Monolithic Switching Regulators Include
Integrated 6A, 42V or 3.3A, 42V Power Switches,
Built-in Fault Protection and Operation up to 2.5MHz
Matthew Topp and Joshua Moore
Power supply designers looking to shrink applications and simplify layout often turn to
monolithic switching regulators. Monolithics simplify power supply layout by including
the power switch on the die—no external FETs or precision sense resistors are needed.
Monolithics can also operate at substantially higher switching frequencies than their
controller-only counterparts, thus reducing the size and number of external passive
components. The benefits of monolithic regulators are clear, but they traditionally have one
major limitation: as the required power level goes up, the likelihood of finding a suitable
monolithic regulator diminishes. Two new high power monolithics, the LT3579 and LT3581,
solve this problem by integrating 6A (42V) and 3.3A (42V) power switches, respectively.
The LT3579 and LT3581 are highly flexible parts and can be configured in
boost, SEPIC, inverting, or flyback configurations. They also offer many unique
performance and fault protection features. When configured as high power
boost converters, these parts can survive
output overloads with only a few additional external components. They can
also be configured to provide hot-plug
and reverse input voltage protection.
In addition, a novel master and slave
power switch design allows high voltage
charge pump circuits to be made with low
power dissipation and few components.
Both parts can be programmed to free-run
from 200kHz to 2.5Mhz or can be synchronized with an outside clock source.
The parts also provide a clock output
pin, enabling the ICs to synchronize
other switching regulators. The LT3579
comes in a 4mm × 5mm QFN and 20-lead
TSSOP package, and the LT3581 comes in a
4mm × 3mm DFN and 16-lead MSE package.
L1
2.2µH
VIN
5V
D1
VOUT
12V
1.7A
M1
COUT1
10µF
100k
200k
CIN
22µF
VIN
SW1 SW2
FAULT
LT3579
130k
FB
CLKOUT
RT
SYNC
VC
86.6k
GND
D2
VIN
GATE
SHDN
COUT
10µF
6.34k
SS
47pF
CIN: 22µF, 16V, X7R, 1210
COUT1, COUT: 10µF, 25V, X7R, 1210
D1: VISHAY SSB43L
D2: CENTRAL SEMI CMDSH-3TR
L1: WÜRTH WE-PD 744771002
M1: SILICONIX SI7123DN
8.06k
0.1µF
2.2nF
Figure 1. This 5V to 12V boost converter can survive the infamous metal file test where a wire attached to the
output is dragged across the jagged surface of a grounded metal file
VOUT
10V/DIV
TO ONE OR MORE
LT3579/LT3581
TO FAULT PIN OF
ONE OR MORE
LT3579/LT3581
TO ONE OR MORE
LT3579/LT3581
VIN
CLKOUT
2V/DIV
RGATE
IL
5A/DIV
GATE
FAULT
LT3579/LT3581
FAULT
5V/DIV
VIN
10µs/DIV
Figure 2. Operating waveforms for Figure 1 circuit
during brutal metal file test
16 | January 2011 : LT Journal of Analog Innovation
Figure 3. Input disconnect schematic
design features
L1
4.7µH
VIN
5V
D1
M1
VOUT
12V
0.5A (VIN = 3V)
0.9A (VIN = 5V)
C1
10µF
100k
51.1k
VIN
SW1 SW2
FAULT
CIN2
4.7µF
CIN1
10µF
130k
6.34k
FB
D3
VIN
GATE
LT3581
SHDN
CLKOUT
RT
SYNC
VC
GND
COUT1
10µF
SS
86.6k
16.9k
0.22µF
2.2nF
47pF
Figure 4. A 3V–5V input to ±12V output converter
C2
4.7µF
L2
3.3µH
L3
3.3µH
VOUT
–12V
0.5A (VIN = 3V)
0.9A (VIN = 5V)
D2
VIN
CIN1, CIN3, CIN4: 10µF, 10V, X5R, 1206
CIN2 : 4.7µF, 10V, X5R, 0805
C1, COUT1, COUT2: 10µF, 25V, X7R, 1210
C2: 4.7µF, 25V, X7R, 1206
D1, D2: DIODES INC SBR2A40P1
D3: CENTRAL SEMI CTLSH1-40M563
CIN3
L1: COILCRAFT XPL7030-472ML
10µF
L2, L3: COOPER DRQ125-3R3
M1: SILICONIX SI7123DN
FAULT PROTECTION FEATURE:
CURRENT OVERLOADS
Most high power boost converters cannot survive an output overload condition
because of the inherent DC pathway that
exists from the input to output through
the inductor and rectifying diode. An
output overload or short causes the
current in this pathway to increase and
run away, thus damaging anything in
this pathway or connected to it. The
12VOUT
500mV/DIV
AC COUPLED
CIN4
10µF
86.6k
LT3579 and LT3581 include features that
protect against such fault events.
Figure 1 shows an LT3579 configured
as a 5V input to 12V output boost converter with output short protection. An
external PFET, diode, and resistor are
all it takes to implement robust output
short protection. In fact, this circuit can
survive the infamous “file test,” where a
wire tied to the output is swiped across
the surface of a metal woodworking
file tied to ground. Figure 2 shows the
IL1
2A/DIV
–12VOUT
500mV/DIV
AC COUPLED
IL2 + IL3
2A/DIV
IL2 + IL3
2A/DIV
100µs/DIV
Figure 5. Load step from 0.25A to 0.75A between
+12V and −12V rail, with 5V input
143k
FB
FAULT
GATE
LT3579-1
FAULT
IL1
2A/DIV
SW1 SW2
10µs/DIV
Figure 6. Transient short between rails with 5V input,
0.9A load before short
SHDN
CLKOUT
RT
SYNC
VC
GND
SS
COUT2
10µF
×2
14.3k
0.22µF
2.2nF
47pF
operating waveforms during this normally
destructive test—the LT3579 survives
this brutal test without any problems.
These parts also protect against several
other types of fault conditions, including
overcurrent conditions, overvoltage on
VIN, and over-temperature inside the part.
In systems where multiple LT3579s/LT3581s
are incorporated to produce multiple
rails, a single PFET and resistor can be
used on the input side to protect all the
rails from a current overload. Figure 3
shows how to set this up. Simply tie the
FAULT pins of all ICs together and connect to a single pull-up resistor. The fault
control scheme is designed so that if one
part goes into fault, it pulls its FAULT pin
low, causing the other parts to go into
fault as well. Switching activity in all
parts stops and all enter into a time-out
period. This time-out period allows the
components in the system to cool down.
Only after the last part exits the time-out
period do all parts attempt to restart. To
January 2011 : LT Journal of Analog Innovation | 17
The LT3579 and LT3581 include features that protect
against a number of fault events including output
overloads or shorts, overcurrent conditions, overvoltage
on VIN, and over-temperature inside the part.
C2
2.2µF
L1
3.3µH
M2
6.34k
•
SW1
GATE
VIN
C1
3.3µF
100k
GATE
LT3579/LT3581
CIN: 0.1µF, 25V, X7R, 0805
C1: 3.3µF, 25V, X7R, 1206
C2: 2.2µF, 50V, X7R, 1206
C3: 10µF, 25V, X7R, 1210
D1: CENTRAL SEMI CTLSH2-40M832
L1, L2: COILCRAFT MSD7342-332MLB
M1, M2: SILICONIX SI7123DN
VIN
Figure 7. Recommended connections for hot plug,
reverse input voltage, and input overvoltage events
isolate a fault to only one part, simply
do not connect the FAULT pins together.
The LT3579 and LT3581 can be easily mixed
within a system while maintaining all
overload and protection features. Figure 4
shows the LT3579-1 configured as an
inverting converter working together with
an LT3581 configured as a boost converter.
Together, these converters generate a
VIN
10V/DIV
43.2k
L2
3.3µH
FB
130k
SHDN
FAULT
C3
10µF
CLKOUT
RT
VC
SYNC
SS
GND
100pF
0.1µF
10k
2.2nF
Figure 8. A 9V–16V input to 12V output SEPIC with hot plug, reverse input voltage, and input
overvoltage protection
regulated ±12V output at up to 0.9A running off a 3V–5V input, with overload and
over-temperature protection. The LT3579-1
is used because it features low input
ripple (see page 19 for more about this
feature of the LT3579-1). Figure 5 shows
the load step response. This system not
only accommodates output shorts and
overloads between each rail to ground,
but it can also tolerate these conditions
between the rails as shown in Figure 6.
FAULT PROTECTION FEATURES: HOT
PLUG, REVERSE INPUT VOLTAGE,
AND INPUT OVERVOLTAGE
The GATE pin, SS pin and related circuitry
can also be used to protect against hot
plug, reverse input voltage, and input
overvoltage events. Figure 7 shows one
way to set this up. Hot plug protection is
VIN
10V/DIV
GND
VIN
10V/DIV
IL1 + IL2
2A/DIV
VOUT
12V
1A (VIN = 9V)
1.1A (VIN = 12V)
1.3A (VIN = 16V)
SW2
LT3581
VIN
CIN
0.1µF
D1
•
VIN
9V TO 16V
M1
IL1 + IL2
2A/DIV
VGATE
20V/DIV
SS
1V/DIV
VOUT
20V/DIV
SS
1V/DIV
VOUT
10V/DIV
IL1 + IL2
2A/DIV
VOUT
10V/DIV
200ms/DIV
Figure 9. Operating waveforms for a hot plug event
18 | January 2011 : LT Journal of Analog Innovation
100ms/DIV
Figure 10. Operating waveforms for a negative VIN
transient
500ms/DIV
Figure 11. Operating waveforms for a VIN
overvoltage transient
design features
Packed with the latest features and some of the highest
power levels of any monolithic converters in the industry,
the LT3579 and LT3581 venture into applications
once reserved for controllers with external FETs.
C2
1µF
L1
3.3µH
L2
3.3µH
VOUT
–12V
625mA
•
•
VIN
5V
D1
CLKOUT
2V/DIV
SW1 SW2
VIN
C1
3.3µF
100k
43.2k
LT3581
FB
SHDN
GATE
FAULT
CLKOUT
RT
VC
SYNC
SS
143k
SW
10V/DIV
C3
4.7µF
47pF
GND
0.1µF
11k
1nF
VOUT
50mV/DIV
AC COUPLED
C1: 3.3µF, 16V, X7R, 1206
C2: 1µF, 25V, X7R, 1206
C3: 4.7µF, 25V, X7R, 1206
D1: DIODES INC. PD3S230H-7
L1, L2: COILCRAFT MSD7342-332MLB
IL1 + IL2
2A/DIV
200ns/DIV
Figure 13. High operating frequency results in low
output ripple, even at maximum load
Figure 12. A 5V input to −12V output inverting DC/DC converter
useful for limiting the surge current when
the input to the power supply is suddenly
stepped from low voltage to normal.
In a boost converter, there is a DC path
from the input to the output capacitors
of the circuit. Since these capacitors are
initially discharged, large surge currents
are possible if this feature is not used.
Figure 8 shows a circuit designed to
handle all these potentially dangerous
conditions. Figure 9 shows the operating waveforms during a hot plug event,
Figure 10 shows the waveforms during a
negative VIN transient, and Figure 11 shows
the result of a VIN overvoltage transient.
The LT3579/LT3581 survives all these
fault conditions and when the fault is
removed, resumes a normal start-up cycle.
parts can synchronize to an external clock.
The CLKOUT pin on the parts is designed
to drive the SYNC pins of other switching regulators. The LT3579 and LT3581
also encode die temperature information
into the duty cycle of the CLKOUT signal,
making thermal measurements simple.
small. The amount of output ripple is
also very low, as shown in Figure 13.
Figure 14 shows a 2.8V to 4.2V input to
5V output boost running at 2MHz using
the LT3579. This circuit is configured
to survive output overloads and can
deliver up to 2A of output current.
Figure 12 shows a 2MHz, 5V input to
−12V output inverting converter with
625m A of output current capability using
the LT3581. Due to the high switching frequency, external components are
USE THE LT3579-1 FOR EVEN MORE
POWER AND SPEED
The LT3579-1 is nearly identical to the
LT3579 with one exception: the CLKOUT pin
has a 50% duty cycle that does not vary
Figure 14. Li-ion battery to 5V output boost running
at 2MHz can deliver 2A of output current.
L1
0.47µH
VIN
2.8V TO 4.2V
VIN
SW1 SW2
SHDN
100k
CIN: 10µF, 16V, X7R, 1206
COUT1, COUT: 22µF, 16V, X7R, 1210
D1: CENTRAL SEMI CTLSH3-30M833
L1: VISHAY IHLP-2020BZ-01-R47
M1: SILICONIX SI7123DN
VOUT
5V
2A
M1
COUT1
22µF
HIGH POWER AND HIGH SPEED
The combination of high current capability and high switching frequency make
the LT3579/LT3581 useful in a wide range
of applications. Not only can the parts
be set for an internal oscillator frequency
between 200kHz and 2.5MHz, but the
D1
45.3k
GATE
LT3579
COUT
22µF
CLKOUT
FAULT
VC
RT
SYNC GND
SS
CIN
10µF
43.2k
10k
FB
47pF
22nF
6.34k
2.2nF
January 2011 : LT Journal of Analog Innovation | 19
L2
4.7µH
Figure 15. Dual phase 8V–16V input to 24V boost converter uses
two LT3579-1s and can deliver up to 5.1A of output current
D2
CPWR1, CPWR2: 10µF, 25V, X7R, 1210
CVIN1, CVIN2: 4.7µF, 25V, X7R, 1206
COUT1M, COUT1S, COUT: 4.7µF, 50V, X5R, 1210
D1, D2: CENTRAL SEMI CTLSH5-40M833
D3: CENTRAL SEMI CTLSH1-40M563
L1, L2: VISHAY IHLP-2525CZ-01-4R7
M1: SILICONIX SI7461DP
COUT1S
4.7µF
×2
CPWR2
10µF
SW1 SW2
CLKOUT
LT3579-1 FB
SLAVE
FAULT
VIN
CVIN2
4.7µF
SHDN
RT
SYNC GND
GATE
VC
SS
0.22µF
86.6k
with die temperature and is 180° out of
phase with its own internal clock whether
the part free runs or is synchronized.
This difference allows for the construction of a dual phase converter in the
boost, SEPIC, or inverting configurations.
VPWR
8V TO 16V
CPWR1
10µF
VIN
3.3V TO VPWR
MASTER AND SLAVE SWITCHES
Both the LT3579 and LT3581 have a novel
master/slave switch configuration. To
implement current mode control, the
MASTER
CLKOUT
2V/DIV
D1
VIN
VOUT1
86.6k
SW1 SW2
CLKOUT
LT3579-1
MASTER FB
CVIN1
4.7µF
SYNC GND
4.99k
86.6k
D3**
VPWR
GATE
VC
47pF
SS
0.22µF
VPWR = 8V
VPWR = 12V
VPWR = 16V
2.4A
3.7A
5.1A
VIN = VPWR
2.2A
3.1A
3.9A
**OPTIONAL FOR OUTPUT SHORT CIRCUIT PROTECTION
master switch (SW1 pin) has a current
comparator to monitor the current. The
slave switch (SW2 pin) has no current
comparator and simply operates in phase
with the master. For most applications,
simply tie SW1 and SW2 pins together to
get a 6A or 3.3A total current limit for
the LT3579 and LT3581, respectively. Since
it may be desirable in some situations
to have a lower current limit with an
easy way to upgrade to a higher current
in the future, these parts can operate
using only the master switch. To do this,
simply float the slave switch pins. As a
result, the LT3579 becomes a 3.4A part
and the LT3581 becomes a 1.9A part.
Figure 16. Output ripple at maximum load for the
dual phase circuit shown in Figure 15
20 | January 2011 : LT Journal of Analog Innovation
EFFICIENCY (%)
100µs/DIV
Figure 17. Transient load response for the dual
phase circuit shown in Figure 15
100
8
90
7
80
6
VIN = 12V
70
60
5
4
VIN = 3.3V
50
3
40
2
30
1
20
0
0.5
1
1.5 2 2.5 3 3.5
LOAD CURRENT (A)
4
POWER LOSS (W)
ILOAD
1A/DIV
500ns/DIV
2.2nF
VIN = 3.3V TO 5V
IL1 + IL2
5A/DIV
IL1 + IL2
5A/DIV
6.98k
*MAX OUTPUT CURRENT
VOUT
1V/DIV
AC COUPLED
VOUT
AC COUPLED
100mV/DIV
COUT
4.7µF
×2
137k
FAULT
SHDN
RT
VOUT
24V
5.1A*
6.34k**
COUT1M
4.7µF
×2
21.5k
499k
A major benefit of out-of-phase operation is an inherent reduction in input
and output ripple. Figure 15 shows an
8V–16V input to 24V output dual-phase
boost converter capable of delivering
up to 5.1A of output current. Each part
operates at 1MHz, but because the outputs operate out of phase the effective
switching frequency of the converter is
2MHz. Figure 16 shows the output ripple
at maximum load, Figure 17 shows the
transient load response, and Figure 18
shows the efficiency. This circuit features output short circuit protection,
which is easily removed if not needed.
M1**
VOUT1
L1
4.7µH
0
4.5
Figure 18. Converter efficiency reaches 93% for the
dual phase circuit shown in Figure 15
design features
The master/slave architecture provides
a clear advantage when creating high
voltage charge pump circuits. It is common practice to create high voltage rails
by building a boost converter and adding
charge pump stages to double or even
triple the boost converter’s output voltage.
At higher power levels, it becomes necessary to dampen the current spikes inherent
in these charge pump circuits. Figure 19
shows a traditional approach, which uses
high power resistors within the charge
pumps. Without these resistors, the current spikes would cause the switching
regulator to false trip, causing erratic
and unstable operation. The problem is
that these resistors add to the component
count and generate additional heat.
Figure 20 shows a better solution in
which the master/slave switch configuration eliminates the need for the
high power resistors. All current spikes
caused by the charge pump stages are
only seen by the slave switch, eliminating the possibility of false tripping.
controllers, resulting in solution sizes
unachievable by controller solutions.
Advanced fault protection features make
it possible to produce compact and rugged solutions without additional ICs.
switching regulators. Both parts feature
a wide input operating voltage range.
The LT3579 can operate from 2.5V to
16V and survive transients to 40V. The
LT3581 can operate from 2.5V to 22V with
transients to 40V. Both parts have built-in
programmable soft-start and automatic
frequency foldback. Single pin feedback enables both positive and negative output voltages. Each part has an
accurate comparator/reference for the
SHDN pin, allowing the pin to be used as
a programmable undervoltage lockout.
A new master and slave switch architecture not only allows adjustment of the
current limit but also significantly eases
the design of high voltage boost plus
charge pump circuits. These new features
are simple to implement, yet stay out the
way if not required. The LT3579, with a 6A,
42V switch comes in a 4mm × 5mm QFN or
20-lead TSSOP package. The LT3581, with a
3.3A, 42V switch comes in a 3mm × 4mm
DFN or 16-lead MSE package. n
CONCLUSION
Packed with the latest features and
some of the highest power levels of any
monolithic converter in the industry, the
LT3579 and LT3581 venture into applications once reserved for controllers.
Monolithic converters can operate at
clock speeds far beyond the ability of
D6
C4
2.2µF
×2
BEST IN CLASS SPECIFICATIONS
C3
2.2µF
×2
D2
L1
10µH
VIN
9V TO 16V
D1
M1**
C1
2.2µF
×3
D9**
VOUT2
100k
VOUT1
536k
CIN
10µF
VIN
SW1 SW2
FAULT
SHDN
RT
SYNC
LT3579
383k
DC/DC
GND
Figure 19. Traditional method for building high power
boost plus charge pump circuits
D8**
8.2V
6.49k**
FB
D7**
C2
2.2µF
×3
VIN
GATE
CLKOUT
VC
GND
SS
86.6k
SW
VOUT1
67V
C5
500mA*
2.2µF
×2
D4
D3
With so many new features, it is easy
to overlook that the LT3579 and LT3581
include all the standard features available in many modern Linear Technology
VIN
C6
2.2µF
×2
D5
VOUT2
100V
330mA*
CIN: 10µF, 25V, X7R, 1210
C1-C6: 2.2µF, 50V, X7R, 1210
D1-D6: DIODES INC SBR2A40P1
D7: CENTRAL SEMI CMDSH-3TR
D8: CENTRAL SEMI CMDZ5237B-LTZ
D9: DIODES INC MBRM360
L1: WÜRTH WE-PD 7447710
M1: SILICONIX SI7461DP
27pF
2.2µF
34k
470pF
*MAX TOTAL
OUTPUT POWER
22W (VIN = 9V)
27W (VIN = 12V)
33W (VIN = 16V)
**OPTIONAL FOR OUTPUT
SHORT CIRCUIT PROTECTION
Figure 20. Master and slave switches of the LT3579/LT3581 allow a cooler running, simpler
method for building boost plus charge pump circuits.
January 2011 : LT Journal of Analog Innovation | 21