Product Group: Vishay Siliconix, ICs / January 2016 Author: Ralph Monteiro Tel: 1 408-970-5233 E-mail: [email protected] New VRPower® Integrated DrMOS Power Stages Deliver High Power Density and Efficiency for Notebooks, Ultrabooks, and Desktops Product Benefits: Combine power MOSFETs, an advanced MOSFET gate driver IC, and a bootstrap Schottky diode High power density: Continuous current to 30 A in the 4.5 mm by 3.5 mm PowerPAK MLP4535-22L package Continuous current to 40 A in the 5 mm by 5 mm PowerPAK MLP55-31L package Lower package parasitics enable switching frequencies up to 2 MHz Driver IC is compatible with a wide range of PWM controllers and supports tri-state PWM logic of 5 V High efficiency: Diode emulation mode circuity and zero-current detect increase light-load efficiency Adaptive dead time control improves efficiency at all load points Support PS4 mode light-load requirements for IMVP8 Feature undervoltage lockout (UVLO) RoHS-compliant and halogen-free Market Applications: Synchronous buck converters, DC/DC voltage regulation modules, and multiphase VRDs for CPUs, GPUs, and memory in next-generation notebooks, ultrabooks, desktops, and workstations Cloud computing Telecom / networking infrastructure Industrial PCs Power delivery for high-performance ASICs and FPGAs in embedded systems The News: To meet the need for high-current, high-efficiency, and high-power-density performance in nextgeneration notebooks, ultrabooks, and desktops, Vishay Intertechnology introduces five new VRPower integrated DrMOS power stage solutions for multiphase POL regulator applications. Combining power MOSFETs, an advanced MOSFET gate driver IC, and a bootstrap Schottky diode in thermally enhanced 4.5 mm by 3.5 mm PowerPAK MLP4535-22L and 5 mm by 5 mm PowerPAK MLP55-31L packages, the Vishay Siliconix SiC530, SiC531, SiC532, SiC631, and SiC632 offer a 45 % smaller footprint compared to utilizing discrete solutions. Product Group: Vishay Siliconix, ICs / January 2016 Optimized for computing platforms utilizing Intel’s Skylake platform High switching frequencies shrink the overall solution size and profile by reducing the size of the output filter High- and low-side MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET technology to reduce switching and conduction losses Reduce current consumption to 5 µA when systems are operating in standby mode, and can be woken from this state within 5 µs The Key Specifications: Package PowerPAK MLP4535-22L (4.5 mm by 3.5 mm) PowerPAK MLP55-31L (5 mm by 5 mm) Part # SiC530 SiC531 SiC532 SiC631 SiC632 Continuous current (A) 30 25 25 40 40 Max. current (A) 40 35 35 50 50 Input voltage (V) 4.5 to 18 4.5 to 24 4.5 to 24 4.5 to 24 4.5 to 24 PS4 Yes No Yes Yes No Efficiency Comparison — SiC530 vs. CSD97374: *Note: Efficiency tested on real system with limitations on inductor footprint and height. Devices can achieve over 93% efficiency without such limitations (see datasheet performance curves for details). Availability: Samples and production quantities of the power stages are available now, with lead times of 10 weeks. Product Group: Vishay Siliconix, ICs / January 2016 To access the product datasheets on the Vishay Website, go to http://www.vishay.com/ppg?62940 (SiC530) http://www.vishay.com/ppg?65999 (SiC531) http://www.vishay.com/ppg?74770 (SiC532) http://www.vishay.com/ppg?67104 (SiC631) http://www.vishay.com/ppg?62992 (SiC632) Contact Information: THE AMERICAS EUROPE ASIA/PACIFIC Vishay Americas [email protected] Vishay Electronic GmbH [email protected] Vishay Intertechnology Asia Pte Ltd. [email protected]