SEMiX653GAL176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules SEMiX653GAL176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V 900 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A Tj Freewheeling diode IF Tj = 150 °C Typical Applications* IFnom • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 450 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 2 2.45 V Tj = 125 °C 2.5 2.9 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 2.2 2.8 m 3.4 4.0 m 5.8 6.4 V 3 mA Tj = 125 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.2 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 39.6 nF f = 1 MHz 1.65 nF f = 1 MHz 1.31 nF QG VGE = - 8 V...+ 15 V 4200 nC RGint Tj = 25 °C 1.67 GAL © by SEMIKRON Rev. 2 – 13.01.2012 1 SEMiX653GAL176HDs Characteristics Symbol td(on) tr Eon td(off) tf Conditions VCC = 1200 V IC = 450 A VGE = ±15 V RG on = 3.6 RG off = 3.6 Eoff SEMiX® 3s Trench IGBT Modules SEMiX653GAL176HDs Rth(j-c) rF • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 290 ns Tj = 125 °C 90 ns Tj = 125 °C 300 mJ Tj = 125 °C 975 ns Tj = 125 °C 190 ns Tj = 125 °C 180 mJ 0.054 K/W Tj = 25 °C 1.7 1.90 V Tj = 125 °C 1.7 1.9 V V Tj = 25 °C 0.9 1.1 1.3 Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 m 1.8 1.8 1.8 m Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM Features min. Tj = 125 °C 380 A 130 µC 73 mJ 0.11 K/W Tj = 25 °C 1.7 1.90 V Tj = 125 °C 1.7 1.9 V V Tj = 25 °C 0.9 1.1 1.3 Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 m 1.8 1.8 m Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode 1.8 380 A 130 µC 73 mJ 0.11 K/W Module LCE RCC'+EE' 20 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 m TC = 125 °C 1 m 0.04 to terminals (M6) Mt nH K/W 3 5 2.5 5 Nm Nm Nm w 300 g Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K GAL 2 Rev. 2 – 13.01.2012 © by SEMIKRON SEMiX653GAL176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 13.01.2012 3 SEMiX653GAL176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 13.01.2012 © by SEMIKRON SEMiX653GAL176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 13.01.2012 5