datasheet

SEMiX453GAR12E4s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
683
A
Tc = 80 °C
526
A
450
A
ICnom
ICRM
SEMiX® 3s
Trench IGBT Modules
SEMiX453GAR12E4s
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
1350
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
544
A
Tc = 80 °C
407
A
450
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 
RGoff,main = 1,0 
RG,X = 2,2 
RE,X = 0,5 
IFRM
IFRM = 3xIFnom
1350
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2430
A
-40 ... 175
°C
Tc = 25 °C
544
A
Tc = 80 °C
407
A
450
A
Tj
Freewheeling diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 3xIFnom
1350
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2430
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 450 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.8
2.05
V
Tj = 150 °C
2.2
2.4
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
2.2
2.6
m
3.3
3.6
m
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 18 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
27.9
nF
f = 1 MHz
1.74
nF
f = 1 MHz
1.53
nF
QG
VGE = - 8 V...+ 15 V
2550
nC
RGint
Tj = 25 °C
1.67

GAR
© by SEMIKRON
Rev. 2 – 03.07.2013
1
SEMiX453GAR12E4s
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
SEMiX® 3s
Trench IGBT Modules
SEMiX453GAR12E4s
Rth(j-c)
rF
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 
RGoff,main = 1,0 
RG,X = 2,2 
RE,X = 0,5 
Qrr
Err
Rth(j-c)
chiplevel
IRRM
Qrr
Err
Rth(j-c)
typ.
max.
chiplevel
Unit
336
ns
Tj = 150 °C
80
ns
Tj = 150 °C
45
mJ
Tj = 150 °C
615
ns
Tj = 150 °C
130
ns
Tj = 150 °C
66.5
mJ
0.065
K/W
Tj = 25 °C
2.1
2.46
V
Tj = 150 °C
2.1
2.4
V
V
Tj = 25 °C
1.1
1.3
1.5
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.4
1.9
2.1
m
2.2
2.6
2.8
m
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
min.
Tj = 150 °C
per IGBT
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
IRRM
Features
Conditions
VCC = 600 V
IC = 450 A
VGE = ±15 V
RG on = 1.9 
RG off = 1.9 
di/dton = 4000 A/µs
di/dtoff = 5000 A/µs
350
A
70
µC
28
mJ
0.11
K/W
Tj = 25 °C
2.1
2.46
V
Tj = 150 °C
2.1
2.4
V
V
Tj = 25 °C
1.1
1.3
1.5
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.4
1.9
2.1
m
2.6
2.8
m
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per diode
2.2
350
A
70
µC
28
mJ
0.11
K/W
Module
LCE
RCC'+EE'
20
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
0.7
m
TC = 125 °C
1
m
0.04
to terminals (M6)
Mt
nH
K/W
3
5
2.5
5
Nm
Nm
Nm
w
300
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 k)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%

3550
±2%
K
GAR
2
Rev. 2 – 03.07.2013
© by SEMIKRON
SEMiX453GAR12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 03.07.2013
3
SEMiX453GAR12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 03.07.2013
© by SEMIKRON
SEMiX453GAR12E4s
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 03.07.2013
5