datasheet

SEMiX302GB17E4s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
516
A
Tc = 80 °C
392
A
300
A
ICnom
ICRM
SEMiX® 2s
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
Tj = 150 °C
900
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Inverse diode
SEMiX302GB17E4s
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
324
A
Tc = 80 °C
238
A
300
A
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,95 Ω
RGoff,main = 1,95 Ω
RG,X = 2,2 Ω
RE,X = 0,5 Ω
IFRM
IFRM = 2xIFnom
600
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1710
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 300 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.90
2.20
V
Tj = 150 °C
2.26
2.45
V
Tj = 25 °C
1.1
1.2
V
Tj = 150 °C
1
1.1
V
Tj = 25 °C
2.7
3.3
mΩ
Tj = 150 °C
4.2
4.5
mΩ
5.8
6.4
V
4
mA
VGE(th)
VGE=VCE, IC = 12 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
5.2
Tj = 25 °C
mA
f = 1 MHz
24
nF
f = 1 MHz
1.00
nF
f = 1 MHz
0.76
nF
QG
VGE = - 8 V...+ 15 V
2400
nC
RGint
Tj = 25 °C
VCC = 1200 V
IC = 300 A
VGE = +15/-15 V
RG on = 3.3 Ω
RG off = 3.3 Ω
di/dton = 6600 A/µs
di/dtoff = 1600 A/µs
du/dt = 4400 V/µs
Ls = 30 nH
2.50
Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Tj = 150 °C
380
ns
Tj = 150 °C
50
ns
Tj = 150 °C
140
mJ
Tj = 150 °C
840
ns
Tj = 150 °C
160
ns
Tj = 150 °C
122
mJ
GB
© by SEMIKRON
Rev. 2 – 20.02.2015
1
SEMiX302GB17E4s
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
SEMiX® 2s
Rth(j-c)
Conditions
VCC = 900 V
IC = 300 A
VGE = +15/-15 V
RG on = 3.3 Ω
RG off = 3.3 Ω
di/dton = 3400 A/µs
di/dtoff = 1400 A/µs
du/dt = 4400 V/µs
Ls = 80 nH
per IGBT
min.
typ.
max.
Unit
Tj = 150 °C
410
ns
Tj = 150 °C
90
ns
Tj = 150 °C
73
mJ
Tj = 150 °C
780
ns
Tj = 150 °C
170
ns
Tj = 150 °C
100
mJ
0.083
K/W
typ.
max.
Unit
1.98
2.37
V
Characteristics
Symbol
SEMiX302GB17E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
rF
IRRM
Qrr
Err
IRRM
• AC inverter drives
• UPS
• Electronic Welding
Qrr
Remarks
Rth(j-c)
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,95 Ω
RGoff,main = 1,95 Ω
RG,X = 2,2 Ω
RE,X = 0,5 Ω
Conditions
Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chiplevel
VF0
chiplevel
Err
chiplevel
IF = 300 A
di/dtoff = 5600 A/µs
VGE = -15 V
VR = 1200 V
IF = 300 A
di/dtoff = 3400 A/µs
VGE = -15 V
VR = 900 V
per diode
min.
Tj = 25 °C
Tj = 150 °C
2.11
2.52
V
1.32
1.56
V
1.08
1.22
V
2.2
2.7
mΩ
Tj = 150 °C
3.4
4.3
mΩ
Tj = 150 °C
310
Tj = 150 °C
103
µC
Tj = 150 °C
70
mJ
Tj = 25 °C
1.16
Tj = 150 °C
Tj = 25 °C
1.7
A
Tj = 150 °C
300
A
Tj = 150 °C
100
µC
Tj = 150 °C
61
mJ
0.184
K/W
Module
LCE
RCC'+EE'
18
res. terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.045
to terminals (M6)
Mt
nH
K/W
3
5
2.5
5
Nm
Nm
Nm
w
250
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX302GB17E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 20.02.2015
3
SEMiX302GB17E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX302GB17E4s
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 20.02.2015
5