SEMiX155MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES IC Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 183 A Tc = 80 °C 138 A 150 A ICnom ICRM SEMiX® 5 3-Level NPC IGBT-Module VGES tpsc Tj IC Target Data ICnom Features ICRM • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤650 V 450 A -20 ... +20 V 10 µs -40 ... 175 °C IGBT2 VCES SEMiX155MLI07E4 ICRM = 3 x ICnom VGES tpsc Tj Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 183 A Tc = 80 °C 138 A 150 A 450 A -20 ... 20 V 10 µs -40 ... 175 °C ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Diode1 VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 145 A Tc = 80 °C 107 A 100 A IFnom IFRM IFRM = 2 x IFnom 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 820 A -40 ... 175 °C Tj Diode2 VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 145 A Tc = 80 °C 107 A 100 A IFnom IFRM IFRM = 2 x IFnom 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 820 A -40 ... 175 °C Tj Diode5 1) Please find further technical information on the SEMIKRON website. VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 145 A Tc = 80 °C 107 A 100 A IFnom IFRM IFRM = 2xIFnom 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 820 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C, Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V MLI © by SEMIKRON Rev. 0.3 – 03.09.2015 1 SEMiX155MLI07E4 Characteristics Symbol IGBT1 VCE(sat) VCE0 SEMiX® 5 3-Level NPC IGBT-Module SEMiX155MLI07E4 Conditions IC = 150 A VGE = 15 V chiplevel chiplevel 1.55 1.95 V Tj = 150 °C 1.75 2.20 V Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V Tj = 25 °C 4.3 6.3 mΩ 6.2 8.7 mΩ 5.8 6.4 V ICES VGE = 0 V, VCE = 650 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V Target Data Features tr td(on) Eon Tj = 150 °C 5.1 mA f = 1 MHz 9.2 nF f = 1 MHz 0.58 nF f = 1 MHz 0.27 nF 1200 nC 2.0 Ω ns IC = 100 A VGE = +15/-15 V ns 1 mJ td(off) ns tf ns Eoff Rth(j-c) 6 IGBT2 VCE(sat) VCE0 0.32 0.07 IC = 150 A VGE = 15 V chiplevel chiplevel 1.95 V Tj = 150 °C 1.75 2.2 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 4.3 6.3 mΩ 6.2 8.7 mΩ 5.8 6.4 VGE(th) VGE = VCE, IC = 4 mA ICES VGE = 0 V, VCE = 650 V, Tj = 25 °C Coes QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon K/W 1.55 VGE = 15 V chiplevel VCE = 25 V VGE = 0 V K/W Tj = 25 °C rCE Cies mJ per IGBT Rth(c-s) Cres 1) Please find further technical information on the SEMIKRON website. Tj = 25 °C VGE = VCE, IC = 4 mA - 8 V...+ 15 V Footnotes Unit VGE(th) Tj = 25 °C • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 max. VGE = 15 V chiplevel RGint Remarks* typ. rCE QG • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside min. Tj = 150 °C 5.1 V mA f = 1 MHz 9.2 nF f = 1 MHz 0.58 nF f = 1 MHz 0.27 nF 1200 nC 2.0 Ω IC = 100 A VGE = +15/-15 V ns ns 1 mJ td(off) ns tf ns Eoff Rth(j-c) 6 per IGBT Rth(c-s) mJ 0.32 0.07 K/W K/W MLI 2 Rev. 0.3 – 03.09.2015 © by SEMIKRON SEMiX155MLI07E4 Characteristics Symbol Diode1 VF = VEC VF0 3-Level NPC IGBT-Module SEMiX155MLI07E4 Target Data chiplevel IRRM Remarks* • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes typ. max. Unit Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.38 1.77 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 3.6 5.3 mΩ Tj = 150 °C 5.3 7.8 mΩ A µC Err 2.25 Rth(j-c) per diode Rth(c-s) per diode VF = VEC • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside IF = 100 A min. Qrr Diode2 Features IF = 100 A VGE = 0 V chiplevel chiplevel rF SEMiX® 5 Conditions VF0 IF = 100 A VGE = 0 V chiplevel chiplevel rF chiplevel IRRM IF = 100 A mJ 0.51 0.12 K/W Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.40 1.77 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 3.6 5.3 mΩ Tj = 150 °C 5.3 7.8 mΩ A Qrr Err µC 1) - Rth(j-c) per diode Rth(c-s) per diode Diode5 VF = VEC VF0 rF IRRM mJ 0.51 0.12 K/W K/W IF = 100 A Tj = 25 °C 1.40 1.80 V chiplevel Tj = 150 °C 1.40 1.80 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 3.6 5.3 mΩ Tj = 150 °C 5.3 7.8 mΩ chiplevel chiplevel IF = 100 A A Qrr 1) Please find further technical information on the SEMIKRON website. K/W µC Err 3 Rth(j-c) per diode Rth(c-s) per diode mJ 0.51 0.12 K/W K/W MLI © by SEMIKRON Rev. 0.3 – 03.09.2015 3 SEMiX155MLI07E4 Characteristics Symbol Conditions min. typ. max. Unit Module LsCE1 32 LsCE2 t.b.d. RCC'+EE' Rth(c-s)1 SEMiX® 5 3-Level NPC IGBT-Module SEMiX155MLI07E4 Rth(c-s)2 Ms res. terminal-chip nH TC = 25 °C mΩ TC = 125 °C mΩ calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K)) to heat sink (M5) to terminals (M6) Mt nH 0.009 K/W K/W 3 5.5 2.5 5 Nm Nm Nm w 398 g 493 ± 5% Ω 3550 ±2% K Temperature Sensor Target Data R100 Tc=100°C (R25=5 kΩ) Features B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. MLI 4 Rev. 0.3 – 03.09.2015 © by SEMIKRON SEMiX155MLI07E4 SEMiX5p MLI This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0.3 – 03.09.2015 5