datasheet

SEMiX155MLI07E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT1
VCES
IC
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
183
A
Tc = 80 °C
138
A
150
A
ICnom
ICRM
SEMiX® 5
3-Level NPC IGBT-Module
VGES
tpsc
Tj
IC
Target Data
ICnom
Features
ICRM
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
Footnotes
VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤650 V
450
A
-20 ... +20
V
10
µs
-40 ... 175
°C
IGBT2
VCES
SEMiX155MLI07E4
ICRM = 3 x ICnom
VGES
tpsc
Tj
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
183
A
Tc = 80 °C
138
A
150
A
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
ICRM = 3 x ICnom
VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 650 V
Diode1
VRRM
IF
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
145
A
Tc = 80 °C
107
A
100
A
IFnom
IFRM
IFRM = 2 x IFnom
200
A
IFSM
10 ms, sin 180°, Tj = 25 °C
820
A
-40 ... 175
°C
Tj
Diode2
VRRM
IF
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
145
A
Tc = 80 °C
107
A
100
A
IFnom
IFRM
IFRM = 2 x IFnom
200
A
IFSM
10 ms, sin 180°, Tj = 25 °C
820
A
-40 ... 175
°C
Tj
Diode5
1)
Please find further technical information
on the SEMIKRON website.
VRRM
IF
Tj = 25 °C
Tj = 175 °C
650
V
Tc = 25 °C
145
A
Tc = 80 °C
107
A
100
A
IFnom
IFRM
IFRM = 2xIFnom
200
A
IFSM
10 ms, sin 180°, Tj = 25 °C
820
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C,
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
MLI
© by SEMIKRON
Rev. 0.3 – 03.09.2015
1
SEMiX155MLI07E4
Characteristics
Symbol
IGBT1
VCE(sat)
VCE0
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX155MLI07E4
Conditions
IC = 150 A
VGE = 15 V
chiplevel
chiplevel
1.55
1.95
V
Tj = 150 °C
1.75
2.20
V
Tj = 25 °C
0.90
1.00
V
Tj = 150 °C
0.82
0.90
V
Tj = 25 °C
4.3
6.3
mΩ
6.2
8.7
mΩ
5.8
6.4
V
ICES
VGE = 0 V, VCE = 650 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Target Data
Features
tr
td(on)
Eon
Tj = 150 °C
5.1
mA
f = 1 MHz
9.2
nF
f = 1 MHz
0.58
nF
f = 1 MHz
0.27
nF
1200
nC
2.0
Ω
ns
IC = 100 A
VGE = +15/-15 V
ns
1
mJ
td(off)
ns
tf
ns
Eoff
Rth(j-c)
6
IGBT2
VCE(sat)
VCE0
0.32
0.07
IC = 150 A
VGE = 15 V
chiplevel
chiplevel
1.95
V
Tj = 150 °C
1.75
2.2
V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.82
0.9
V
Tj = 25 °C
4.3
6.3
mΩ
6.2
8.7
mΩ
5.8
6.4
VGE(th)
VGE = VCE, IC = 4 mA
ICES
VGE = 0 V, VCE = 650 V, Tj = 25 °C
Coes
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
K/W
1.55
VGE = 15 V
chiplevel
VCE = 25 V
VGE = 0 V
K/W
Tj = 25 °C
rCE
Cies
mJ
per IGBT
Rth(c-s)
Cres
1)
Please find further technical information
on the SEMIKRON website.
Tj = 25 °C
VGE = VCE, IC = 4 mA
- 8 V...+ 15 V
Footnotes
Unit
VGE(th)
Tj = 25 °C
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
max.
VGE = 15 V
chiplevel
RGint
Remarks*
typ.
rCE
QG
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
min.
Tj = 150 °C
5.1
V
mA
f = 1 MHz
9.2
nF
f = 1 MHz
0.58
nF
f = 1 MHz
0.27
nF
1200
nC
2.0
Ω
IC = 100 A
VGE = +15/-15 V
ns
ns
1
mJ
td(off)
ns
tf
ns
Eoff
Rth(j-c)
6
per IGBT
Rth(c-s)
mJ
0.32
0.07
K/W
K/W
MLI
2
Rev. 0.3 – 03.09.2015
© by SEMIKRON
SEMiX155MLI07E4
Characteristics
Symbol
Diode1
VF = VEC
VF0
3-Level NPC IGBT-Module
SEMiX155MLI07E4
Target Data
chiplevel
IRRM
Remarks*
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
Footnotes
typ.
max.
Unit
Tj = 25 °C
1.40
1.76
V
Tj = 150 °C
1.38
1.77
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
3.6
5.3
mΩ
Tj = 150 °C
5.3
7.8
mΩ
A
µC
Err
2.25
Rth(j-c)
per diode
Rth(c-s)
per diode
VF = VEC
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
IF = 100 A
min.
Qrr
Diode2
Features
IF = 100 A
VGE = 0 V
chiplevel
chiplevel
rF
SEMiX® 5
Conditions
VF0
IF = 100 A
VGE = 0 V
chiplevel
chiplevel
rF
chiplevel
IRRM
IF = 100 A
mJ
0.51
0.12
K/W
Tj = 25 °C
1.40
1.76
V
Tj = 150 °C
1.40
1.77
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
3.6
5.3
mΩ
Tj = 150 °C
5.3
7.8
mΩ
A
Qrr
Err
µC
1)
-
Rth(j-c)
per diode
Rth(c-s)
per diode
Diode5
VF = VEC
VF0
rF
IRRM
mJ
0.51
0.12
K/W
K/W
IF = 100 A
Tj = 25 °C
1.40
1.80
V
chiplevel
Tj = 150 °C
1.40
1.80
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
3.6
5.3
mΩ
Tj = 150 °C
5.3
7.8
mΩ
chiplevel
chiplevel
IF = 100 A
A
Qrr
1)
Please find further technical information
on the SEMIKRON website.
K/W
µC
Err
3
Rth(j-c)
per diode
Rth(c-s)
per diode
mJ
0.51
0.12
K/W
K/W
MLI
© by SEMIKRON
Rev. 0.3 – 03.09.2015
3
SEMiX155MLI07E4
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Module
LsCE1
32
LsCE2
t.b.d.
RCC'+EE'
Rth(c-s)1
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX155MLI07E4
Rth(c-s)2
Ms
res. terminal-chip
nH
TC = 25 °C
mΩ
TC = 125 °C
mΩ
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
to heat sink (M5)
to terminals (M6)
Mt
nH
0.009
K/W
K/W
3
5.5
2.5
5
Nm
Nm
Nm
w
398
g
493 ± 5%
Ω
3550
±2%
K
Temperature Sensor
Target Data
R100
Tc=100°C (R25=5 kΩ)
Features
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max
• Product reliability results are valid for
Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
MLI
4
Rev. 0.3 – 03.09.2015
© by SEMIKRON
SEMiX155MLI07E4
SEMiX5p
MLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0.3 – 03.09.2015
5
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