SEMiX453GD17E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 762 A Tc = 80 °C 579 A 450 A ICnom ICRM SEMiX® 33c VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse diode SEMiX453GD17E4c VRRM IF Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 482 A Tc = 80 °C 354 A 450 A IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125 °C max. • Product reliability results are valid for Tj=150 °C IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2565 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 450 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.26 2.45 V Tj = 25 °C 1.1 1.2 V Tj = 150 °C 1 1.1 V Tj = 25 °C 1.8 2.2 mΩ Tj = 150 °C 2.8 3 mΩ 5.8 6.4 V 5 mA VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.2 Tj = 25 °C mA f = 1 MHz 36 nF f = 1 MHz 1.50 nF f = 1 MHz 1.14 nF QG VGE = - 8 V...+ 15 V 3600 nC RGint Tj = 25 °C VCC = 1200 V IC = 450 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 7560 A/µs di/dtoff = 2400 A/µs du/dt = 5320 V/µs Ls = 30 nH 1.67 Ω td(on) tr Eon td(off) tf Eoff Tj = 150 °C 270 ns Tj = 150 °C 61 ns Tj = 150 °C 186 mJ Tj = 150 °C 810 ns Tj = 150 °C 170 ns Tj = 150 °C 183 mJ GD © by SEMIKRON Rev. 2 – 20.02.2015 1 SEMiX453GD17E4c Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMiX® 33c Rth(j-c) Conditions VCC = 1200 V IC = 450 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 4250 A/µs di/dtoff = 1950 A/µs du/dt = 4800 V/µs Ls = 80 nH per IGBT min. typ. max. Unit Tj = 150 °C 310 Tj = 150 °C 110 ns Tj = 150 °C 84 mJ Tj = 150 °C 760 ns Tj = 150 °C 200 ns Tj = 150 °C 150 mJ ns 0.056 K/W typ. max. Unit 1.98 2.37 V Characteristics Symbol SEMiX453GD17E4c Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel rF IRRM Qrr Err IRRM Qrr Err Remarks Rth(j-c) • Case temperature limited to TC=125 °C max. • Product reliability results are valid for Tj=150 °C LCE chiplevel IF = 450 A di/dtoff = 7400 A/µs VGE = -15 V VR = 1200 V IF = 450 A di/dtoff = 4300 A/µs VGE = -15 V VR = 900 V per diode min. Tj = 25 °C Tj = 150 °C 2.11 2.52 V 1.32 1.56 V 1.08 1.22 V 1.5 1.8 mΩ Tj = 150 °C 2.3 2.9 mΩ Tj = 150 °C 540 Tj = 150 °C 160 µC Tj = 150 °C 122 mJ Tj = 25 °C 1.16 Tj = 150 °C Tj = 25 °C 1.2 A Tj = 150 °C 470 A Tj = 150 °C 155 µC Tj = 150 °C 107 mJ 0.125 K/W Module RCC'+EE' res. terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.85 mΩ TC = 125 °C 1.2 mΩ 0.014 K/W to terminals (M6) Mt 3 5 2.5 5 Nm Nm Nm w 900 g Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GD 2 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX453GD17E4c Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 20.02.2015 3 SEMiX453GD17E4c Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX453GD17E4c SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 20.02.2015 5