SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX® 4s Trench IGBT Modules SEMiX604GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V 800 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 533 A Tc = 80 °C 367 A 400 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2500 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.7 2.10 V Tj = 125 °C 2.0 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.8 2.3 m 2.8 3.4 m 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 16 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 400 A VGE = ±15 V RG on = 2.2 RG off = 2.2 td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 28.8 nF f = 1 MHz 1.51 nF f = 1 MHz 1.31 nF 3200 nC 1.88 Tj = 125 °C 330 ns Tj = 125 °C 70 ns Tj = 125 °C 36 mJ Tj = 125 °C 630 ns Tj = 125 °C 130 ns Tj = 125 °C 60 mJ per IGBT 0.065 K/W GB © by SEMIKRON Rev. 1 – 03.07.2013 1 SEMiX604GB126HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF SEMiX® 4s Trench IGBT Modules SEMiX604GB126HDs IRRM Qrr Err Rth(j-c) • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 125 °C typ. max. Unit 1.6 1.80 V 1.6 1.8 V Tj = 25 °C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.3 1.5 1.8 m 2.0 2.3 m Tj = 125 °C IF = 400 A Tj = 125 °C di/dtoff = 6200 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 1.8 475 A 100 µC 46 mJ 0.11 K/W Module LCE RCC'+EE' Features chiplevel min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 22 nH TC = 25 °C 0.7 m TC = 125 °C 1 m 0.03 to terminals (M6) Mt K/W 3 5 2.5 5 Nm Nm Nm w 400 g Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX604GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 03.07.2013 3 SEMiX604GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX604GB126HDs SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 03.07.2013 5