SiP32508, SiP32509 www.vishay.com Vishay Siliconix 1.1 V to 5.5 V, Slew Rate Controlled Load Switch in TSOT23-6 DESCRIPTION FEATURES The SiP32508 and SiP32509 are a slew rate controlled load switches designed for 1.1 V to 5.5 V operation. The switch element is of n-channel device that provides low Ron of 44 m typically over a wide range of input. The devices guarantee low switch on-resistance at 1.2 V input. They feature a controlled soft-on slew rate of typical 2.5 ms that limits the inrush current for designs of heavy capacitive load and minimizes the resulting voltage droop at the power rails. These devices feature a low voltage control logic interface (On/Off interface) that can interface with low voltage control signals without extra level shifting circuit. SiP32508 and SiP32509 have exceptionally low shutdown current and provides reverse blocking to prevent high current flowing into the power source. SiP32509 integrates a switch OFF output discharge circuit. Both SiP32508 and SiP32509 are available in TSOT23-6 package. • 1.1 V to 5.5 V operation voltage range • Flat low Ron down to 1.2 V • 44 m typical from 1.5 V to 5 V • Slew rate controlled turn-on: 2.5 ms at 3.6 V • Low quiescent current < 1 μA when disabled 10.5 μA typical at VIN = 1.2 V Available • Reverse current blocking when switch is off, with guaranteed less than 2 μA leakage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PDAs / smart phones • Ultrabook and notebook computer • Tablet devices • Portable media players • Digital camera • GPS navigation devices • Data storage devices • Optical, industrial, medical, and healthcare devices • Peripherals • Office automation • Networking TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32508, SiP32509 C IN 4.7 µF C OUT 0.1 µF EN GND EN GND GND Fig. 1 - SiP32508, SiP32509 Typical Application Circuit ORDERING INFORMATION TEMPERATURE RANGE -40 °C to +85 °C PACKAGE TSOT23-6 MARKING PART NUMBER LD SiP32508DT-T1-GE3 LE SiP32509DT-T1-GE3 Note • GE3 denotes halogen-free and RoHS compliant S16-0319-Rev. B, 29-Feb-16 Document Number: 62754 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT Supply Input Voltage (VIN) -0.3 to +6 Enable Input Voltage (VEN) -0.3 to +6 Output Voltage (VOUT) -0.3 to +6 Maximum Continuous Switch Current (I max.) c UNIT V 3 Maximum Repetitive Pulsed Current (1 ms, 10 % Duty Cycle) c 6 Maximum Non-Repetitive Pulsed Current (100 μs, EN = Active) c 12 ESD Rating (HBM) A >8 kV Junction Temperature (TJ) -40 to +150 °C Thermal Resistance (JA) a 150 °C/W Power Dissipation (PD) a, b 833 mW Notes a. Device mounted with all leads soldered or welded to PC board, see PCB layout. b. Derate 6.66 mW/°C above TA = 25 °C, see PCB layout. c. TA = 25 °C, see PCB layout Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE PARAMETER LIMIT Input Voltage Range (VIN) Operating Junction Temperature Range (TJ) UNIT 1.1 to 5.5 V -40 to +125 °C SPECIFICATIONS PARAMETER Operating Voltage c Quiescent Current SYMBOL TEST CONDITIONS UNLESS SPECIFIED VIN = 5 V, TA = -40 °C to +85 °C (typical values are at TA = 25 °C) VIN IQ LIMITS -40 °C to +85 °C MIN. a UNIT TYP. b MAX. a 1.1 - 5.5 VIN = 1.2 V, EN = active - 10.5 17 VIN = 1.8 V, EN = active - 21 30 VIN = 2.5 V, EN = active - 34 50 VIN = 3.6 V, EN = active - 54 90 VIN = 4.3 V, EN = active - 68 110 VIN = 5 V, EN = active - 105 180 1 Off Supply Current IQ(off) EN = inactive, OUT = open - - Off Switch Current IDS(off) EN = inactive, OUT = GND - - 1 IRB VOUT = 5 V, VIN = 0 V, VEN = inactive - - 10 VIN = 1.2 V, IL = 100 mA, TA = 25 °C - 47 54 VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 3.6 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 5 V, IL = 100 mA, TA = 25 °C - 46 52 - 3570 - Reverse Blocking Current On-Resistance On-Resistance Temp.-Coefficient S16-0319-Rev. B, 29-Feb-16 RDS(on) TCRDS V μA m ppm/°C Document Number: 62754 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER EN Input Low Voltage c EN Input High Voltage c SYMBOL LIMITS -40 °C to +85 °C TEST CONDITIONS UNLESS SPECIFIED VIN = 5 V, TA = -40 °C to +85 °C (typical values are at TA = 25 °C) MIN. a TYP. b VIL VIH UNIT MAX. a VIN = 1.2 V - - 0.3 VIN = 1.8 V - - 0.4 d VIN = 2.5 V - - 0.5 d VIN = 3.6 V - - 0.6 d VIN = 4.3 V - - 0.7 d VIN = 5 V - - 0.8 d VIN = 1.2 V 0.9 d - - VIN = 1.8 V 1.2 d - - VIN = 2.5 V 1.4 d - - VIN = 3.6 V 1.6 d - - VIN = 4.3 V d 1.7 VIN = 5 V 1.8 - - - - V EN Input Leakage ISINK VEN = 5.5 V -1 - 1 μA Output Pulldown Resistance RPD EN = inactive, TA = 25 °C, (for SiP32509 only) - 217 280 Output Turn-On Delay Time td(on) - 1.8 - 1.2 2.5 3.8 - - 0.001 Output Turn-On Rise Time t(on) Output Turn-Off Delay Time td(off) VIN = 3.6 V, Rload = 10 , TA = 25 °C ms Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guarantee by design. PIN CONFIGURATION 1 6 2 5 3 4 Top View Fig. 2 - TSOT23-6 Package PIN DESCRIPTION PIN NUMBER NAME FUNCTION 1, 2 OUT These are output pins of the switch 3 EN Enable input 4 GND Ground connection 5, 6 IN These are input pins of the switch S16-0319-Rev. B, 29-Feb-16 Document Number: 62754 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix BLOCK DIAGRAM Reverse Blocking IN OUT Charge Pump Turn On Slew Rate Control Control Logic EN GND Fig. 3 - Functional Block Diagram TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 120 140 VIN = 5 V 100 IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) 120 100 80 60 40 80 60 40 20 20 0 1 1.5 2 2.5 3.5 3 VIN (V) 4 4.5 5 VIN = 1.2 V 0 - 40 5.5 Fig. 4 - Quiescent Current vs. Input Voltage - 20 0 20 40 Temperature (°C) 60 80 100 Fig. 6 - Quiescent Current vs. Temperature 0.7 100 0.6 10 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) VIN = 3.6 V 0.5 0.4 0.3 0.2 0.1 0.0 1 1.5 2 2.5 3 3.5 VIN (V) 4 4.5 5 5.5 Fig. 5 - Off Supply Current vs. Input Voltage S16-0319-Rev. B, 29-Feb-16 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.001 0.0001 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Fig. 7 - Off Supply Current vs. Temperature Document Number: 62754 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 1000 1.2 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 100 10 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.3 0.2 1 1.5 2 2.5 3 3.5 VIN (V) 4 4.5 5 0.001 - 40 5.5 Fig. 8 - Off Switch Current vs. Input Voltage 0 20 40 60 Temperature (°C) 80 100 Fig. 11 - Off Switch Current vs. Temperature 58 60 IO = 0.1 A VIN = 5 V IO = 2.5 A 56 IO = 2.0 A IO = 1.5 A IO = 0.1 A 52 55 RDS - On-Resistance (mΩ) 54 RDS - On-Resistance (mΩ) - 20 IO = 1.0 A 50 48 46 44 50 45 40 42 40 35 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 VIN (V) 20 40 60 80 100 Temperature (°C) Fig. 9 - RDS(on) vs. VIN Fig. 12 - RDS(on) vs. Temperature 280 600 550 SiP32509 only VOUT = VIN = 5V 270 SiP32509 only 500 VOUT = VIN RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) 0 450 400 350 300 250 200 260 250 240 230 220 150 210 100 50 1.0 1.5 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 Fig. 10 - Output Pull Down vs. VIN S16-0319-Rev. B, 29-Feb-16 5.5 200 - 40 - 20 0 20 40 60 Temperature (°C) 80 100 Fig. 13 - Output Pull Down vs. Temperature Document Number: 62754 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 2.2 0 td(on) - Turn-On Delay Time (ms) IIN - Input Current (nA) -2 -4 -6 VIN = 0 V -8 - 10 - 12 0.5 1 1.5 2 2.5 3 3.5 VOUT (V) 4 4.5 5 VIN = 5 V CL = 0.1 μF RL = 10 Ω 2.0 1.8 1.6 1.4 1.2 - 40 5.5 40 60 80 100 0.20 VIN = 5 V CL = 0.1 μF RL = 10 Ω VIN = 5 V CL = 0.1 μF RL = 10 Ω 0.18 td(off) - Turn-Off Delay Time (μs) tr - Rise Time (ms) 20 Fig. 16 - Turn-On Delay Time vs. Temperature 3.25 2.75 2.50 2.25 2.00 1.75 - 40 0 Temperature (°C) Fig. 14 - Reverse Blocking Current vs. Output Voltage 3.00 - 20 0.16 0.14 0.12 0.10 0.08 - 20 0 20 40 Temperature (°C) 60 80 0.06 - 40 100 Fig. 15 - Rise Time vs. Temperature - 20 0 20 40 Temperature (°C) 60 80 100 Fig. 17 - Turn-Off Delay Time vs. Temperature 1.6 1.5 EN Threshold Voltage (V) 1.4 1.3 1.2 VIH 1.1 1.0 VIL 0.9 0.8 0.7 0.6 0.5 1 1.5 2 2.5 3 3.5 VIN (V) 4 4.5 5 5.5 Fig. 18 - EN Threshold Voltage vs. Input Voltage S16-0319-Rev. B, 29-Feb-16 Document Number: 62754 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS EN 5VOUT EN 5VOUT 3.6VOUT 3.6VOUT 1.5VOUT IOUT for 5VOUT 1.5VOUT IOUT for 5VOUT IOUT for 3.6VOUT IOUT for 3.6VOUT IOUT for 1.5VOUT IOUT for 1.5VOUT 2 V/Div, 2 A/Div, 2 μs/Div 2 V/Div, 2 A/Div, 2 ms/Div Fig. 19 - Typical Turn-On Delay, Rise Time COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A Fig. 22 - Typical Fall Time COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A EN 5VOUT EN 5VOUT 3.6VOUT 3.6VOUT 1.5VOUT IOUT for 5VOUT IOUT for 3.6VOUT IOUT for 1.5VOUT 2 V/Div, 0.25 A/Div, 2 ms/Div 1.5VOUT IOUT for 5VOUT IOUT for 3.6VOUT IOUT for 1.5VOUT 2 V/Div, 0.25 A/Div, 2 μs/Div Fig. 20 - Typical Turn-On Delay, Rise Time COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10 Fig. 23 - Typical Fall Time COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10 EN 5VOUT EN 5VOUT 3.6VOUT 3.6VOUT 1.5VOUT 1.5VOUT IOUT for 5VOUT IOUT for 5VOUT IOUT for 3.6VOUT IOUT for 3.6VOUT IOUT for 1.5VOUT 2 V/Div, 2 A/Div, 2 ms/Div Fig. 21 - Typical Turn-On Delay, Rise Time COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A S16-0319-Rev. B, 29-Feb-16 IOUT for 1.5VOUT 2 V/Div, 2 A/Div, 2 ms/Div Fig. 24 - Typical Fall Time COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A Document Number: 62754 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix EN 5VOUT EN 5VOUT 3.6VOUT 3.6VOUT 1.5VOUT 1.5VOUT IOUT for 5VOUT IOUT for 5VOUT IOUT for 3.6VOUT IOUT for 3.6VOUT IOUT for 1.5VOUT IOUT for 1.5VOUT 2 V/Div, 0.25 A/Div, 2 ms/Div 2 V/Div, 0.25 A/Div, 2 ms/Div Fig. 25 - Typical Turn-On Delay, Rise Time COUT = 200 μF, CIN = 4.7 μF, ROUT = 10 Fig. 26 - Typical Fall Time COUT = 200 μF, CIN = 4.7 μF, ROUT = 10 DETAILED DESCRIPTION SiP32508 and SiP32509 are advanced slew rate controlled high side load switches consisted of a n-channel power switches. When a device is enable the gate of the power switch is turned on at a controlled rate to avoid excessive in-rush current. Once fully on the gate to source voltage of the power switch is biased at a constant level. The design gives a flat on resistance throughout the operating voltages. When the device is off, the reverse blocking circuitry prevents current from flowing back to input if output is raised higher than input. The reverse blocking mechanism also works in case of no input applied. APPLICATION INFORMATION Input Capacitor SiP32508 and SiP32509 do not require input capacitor. To limit the voltage drop on the input supply caused by transient inrush currents, a input bypass capacitor is recommended. A 2.2 μF ceramic capacitor placed as close to the VIN and GND should be enough. Higher values capacitor can help to further reduce the voltage drop. Ceramic capacitors are recommended for their ability to withstand input current surge from low impedance sources such as batteries in portable devices. Output Capacitor While these devices work without an output capacitor, an 0.1 μF or larger capacitor across VOUT and GND is recommended to accommodate load transient condition. It also helps preventing parasitic inductance from forcing VOUT below GND when switching off. Output capacitor has minimal affect on device’s turn on slew rate time. There is no requirement on capacitor type and its ESR. S16-0319-Rev. B, 29-Feb-16 Enable The EN pin is compatible with both TTL and CMOS logic voltage levels. Enable pin voltage can be above IN once it is within the absolute maximum rating range. Protection Against Reverse Voltage Condition Both SiP32508 and SiP32509 contain reverse blocking circuitry to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. Reverse blocking works for input voltage as low as 0 V. Thermal Considerations SiP32508 and SiP32509 are designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 3 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 150 °C/W) the IN and OUT pins of the device should be connected to heat sinks on the printed circuit board. Figure 27 shows a demo board layout. All copper traces and vias for the IN and OUT pins should be sized adequately to carry the maximum continuous current. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ (max.) = 125 °C, the junction-to-ambient thermal resistance for the TSOT23-6 package, J-A = 150 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 150 Document Number: 62754 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32508, SiP32509 www.vishay.com Vishay Siliconix It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 367 mW. So long as the load current is below the 3 A limit, the maximum continuous switch current becomes a function of two things: the package power dissipation and the RDS(on) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(on) at 25 °C occurs at an input voltage of 1.2 V and is equal to 55 m. The RDS(on) at 70 °C can be extrapolated from this data using the following formula: Where TC is 3570 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 52 m x (1 + 0.00357 x (70 °C - 25 °C)) = 60 m R DS(ON ) which in this case is 2.4 A. Under the stated input voltage condition, if the 2.4 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Reverse Blocking OUT Charge Pump EN The device is mounted on the evaluation board shown in the PCB layout section. It is loaded with pulses of 5 A and 1 ms for periods of 4.6 ms. 5A 180 mA 4.6 ms Switch Non-Repetitive Pulsed Current P (max.) Control Logic Input Buffer Pulse Current Capability The SiP32508 and SiP32509 can safely support 5 A pulse current repetitively at 25 °C. The maximum current limit is then determined by IN When an internal circuit detects the condition of VOUT 0.8 V higher than VIN, it will turn on the pull down circuit connected to EN, forcing the switching OFF. The pull down value is about 1 k. 1 ms RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x DT) I LOAD (max.) < Active EN Pull Down for Reverse Blocking The SiP32508 and SiP32509 can withstand inrush current of up to 12 A for 100 μs at 25 °C when heavy capacitive loads are connected and the part is already enabled. Recommended Board Layout For the best performance, all traces should be as short as possible to minimize the inductance and parasitic effects. The input and output capacitors should be kept as close as possible to the input and output pins respectively. Using wide traces for input, output, and GND to reducing the case to ambient thermal impedance. Control and Drive VOUT > VIN Detect Pull Down Circuit When VOUT is 0.8 V above the VIN, pull down circuit will be activated. It connects the EN to GND with a resistance of around 1 kΩ. Fig. 27 - Demo Board Layout Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62754. S16-0319-Rev. B, 29-Feb-16 Document Number: 62754 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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