Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N7002ZT
Power MOSFET
300mA, 60V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET

DESCRIPTION
The UTC 2N7002ZT uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM
applications.

FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

2N7002ZTG-AN3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-523
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-538.E
2N7002ZT

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
Continuous
300
Drain Current
ID
mA
Pulse(Note 2)
800
200
mW
Power Dissipation
PD
Derating above TA=25°C
1.6
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=10µA
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
60
VGS(TH)
VDS=10V, ID=1mA
VGS=10V, ID=0.3A, TJ=125°C
VGS=5V, ID=0.05A
1.0
RDS(ON)
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MAX UNIT
1.0
±10
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
ID=0.2 A, VDD=30V, VGS=10V,
RL=150Ω, RG=10Ω
Turn-OFF Delay Time
tD(OFF)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Maximum Continuous Drain-Source Diode
Is
Forward Current
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
UNISONIC TECHNOLOGIES CO., LTD
TYP
1.85
2.5
13.5
7.5
V
µA
µA
V
Ω
25
10
3.0
50
25
5.0
pF
pF
pF
12
20
20
30
ns
ns
0.88
1.5
V
0.8
A
300
mA
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QW-R502-538.E
2N7002ZT

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-538.E
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