Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UK1398
Power MOSFET
N-CHANNEL MOSFET FOR HIGH
SPEED SWITCHING

DESCRIPTION
The UTC UK1398 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.

FEATURES
* RDS(ON)<40Ω @ VGS=2.5V, ID=10mA
* RDS(ON)<20Ω @ VGS=4.0V, ID=10mA
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK1398G-AE3-R
UK1398L-T92-B
UK1398G-T92-B
UK1398L-T92-K
UK1398G-T92-K
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Package
SOT-23
TO-92
TO-92
Pin Assignment
1
2
3
S
G
D
S
D
G
S
D
G
Packing
Tape Reel
Tape Box
Bulk
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UK1398

Power MOSFET
MARKING
SOT-23
TO-92
1398G
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UK1398

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
50
V
±7.0
V
DC
±100
mA
Continuous Drain Current
ID
Pulse(Note 2)
±200
mA
SOT-23
200
Power Dissipation
PD
mW
TO-92
625
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≤10ms, Duty cycle≤50%

SYMBOL
VDSS
VGSS
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=50V, VGS=0V
VGS=±7.0V, VDS=0 V
50
Gate Threshold Voltage
VGS(TH)
VGS(OFF)
1.0
0.6
Static Drain-Source On-Resistance
RDS(ON)
VDS=VGS , ID=250µA
VDS=3.0V, ID=1.0µA
VGS=2.5V, ID=10mA
VGS=4.0V, ID=10mA
VDS=3.0V, ID=10mA
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=3.0V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=3.0V, ID=20mA,
Turn-ON Rise Time
tR
VGS(ON)=3.0V, RG=10Ω,
Turn-OFF Delay Time
tD(OFF)
RL=150Ω
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
10
±5.0
20
1.2
22
14
38
3.0
1.5
40
20
V
µA
µA
V
V
Ω
Ω
mS
8
7
3
pF
pF
pF
15
100
30
35
ns
ns
ns
ns
1.3
V
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)

Drain-Source On-State
Resistance Characteristics
12
VGS=4V
Drain Current, ID (mA)
10
VGS=2.5V
8
6
4
2
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UK1398
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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