Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4809
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
DESCRIPTION
This UD4809 N-Channel MOSFET is produced using UTC
advanced process which has been tailored to make the on-state
resistance minimum and yet maintain low gate charge for
superior switching performance especially. The UD4809 is well
suited for where low in-line power loss is needed in a very small
outline surface mount package, such as low voltage and battery
powered applications.
„
FEATURES
* Low RDS(ON)
* Low capacitance
* Optimized gate charge
„
*Pb-free plating product number: UD4809L
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UD4809-TN3-R
UD4809L-TN3-R
UD4809-TN3-T
UD4809L-TN3-T
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Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 6
QW-R502-177.A
UD4809
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 3)
ID
9.0
A
Drain to Source dv/dt
dv/dt
6.0
V/ns
Power Dissipation (Note 3)
PD
1.3
W
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction-to-Ambient (Note 3)
Junction-to-Case
„
SYMBOL
θJA
θJC
MIN
TYP
MAX
116
2.9
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
(Note 2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250µA
VDS =24V, VGS =0 V
VDS =0 V, VGS = ±20V
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10~11.5 V
RDS(ON)
VGS =4.5 V
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TYP
MAX
UNIT
1.0
±100
V
µA
nA
30
1.5
ID =30 A
ID =15 A
ID =30 A
ID =15 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =12 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=4.5V,VDS=15V, ID =15A,
RG =3.0Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=11.5V,VDS=15V, ID =15A,
RG =3.0Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VDS =15V, VGS =4.5V, ID =30A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=30A,VGS=0V
Source Current (Body Diode)
IS
Reverse Recovery Time
tRR
VGS = 0 V, dIs/dt= 100 A/ s,
IS = 30 A
Reverse Recovery Time
QRR
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Surface-mounted on FR4 board using the minimum recommended pad size.
UNISONIC TECHNOLOGIES CO., LTD
MIN
7.0
7.0
12
11
2.5
9.0
14
1456
315
200
12.3
21.3
15.1
5.3
7.0
22.7
25.3
2.8
11
2.5
4.8
5.0
0.95
19.5
9.2
V
mΩ
mΩ
pF
ns
ns
13
nC
1.2
43
V
A
ns
nC
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QW-R502-177.A
Drain to Source On-Resistance,
RDS(ON) (mΩ)
Drain to Source On-Resistance,
RDS(ON) (mΩ)
Drain Current,ID (A)
Drain Current,ID (A)
„
Drain to Source Leakage Current,
IDSS(nA)
Normalized Drain-to-Source
Resistance,RDS(ON)
UD4809
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS
QW-R502-177.A
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UD4809
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
„
Resistive Switching Time Variation
vs. Gate Resistance
VDD=15V
ID=30A
VGS=11.5V
1000
Body-Diode Characteristics
30
VGS=0V
TJ=25℃
25
100
20
td(off)
tr
10
15
10
td(on)
tf
5
0
1
10
Gate Resistance,RG (OHMS)
100
0.5
0.7
0.8
0.9
1.0
0.6
Body Diode Forward Voltage,VSD (V)
Capacitance (pF)
Gate to Source Voltage,VGS (V)
1
Single Pulse Drain-to-Source Avalanche
Energy,EAS (mJ)
120
Maximum Avalanche Energy vs. Starting
Junction Temperature
Avalanche Characteristics
100
ID=15A
100℃
Drain Current,ID (A)
100
80
60
40
25℃
125℃
10
1
20
0
25
0.1
50
75
100
125 150
Junction Temperature,TJ (℃)
175
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
100
Pulse Width (μs)
1000
4 of 5
QW-R502-177.A
UD4809
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Effective Transient Thermal
Resistance,r (t)
Drain Current,ID (A)
„
Thermal Response
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
Single Pulse
0.01
1.0E-05
1.0E-04
RθJC(t)=r(t)RθJC
D Curves Apply for
Power Pulse Train
Shown Read Time at t1
TJ(pk)-TC=P(pk)RθJC(t)
Duty Cyclr,D=t1/t2
t1
t2
1.0E-03
1.0E-02
Time,t (μs)
1.0E-01
1.0E+00
1.0E+01
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-177.A
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