Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UDN302
Power MOSFET
P-CHANNEL 2.5V SPECIFIED
POWERTRENCH MOSFET
„
DESCRIPTION
The UDN302 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
FEATURES
* RDS(ON)=55mΩ @ VGS=-4.5V
* RDS(ON)=80mΩ @ VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
3.Drain
2.Gate
1.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UDN302L-AE3-R
UDN302G-AE3-R
„
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
NC03
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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UDN302
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
-2.4
A
Pulsed Drain Current
IDM
-10
A
Maximum Power Dissipation
PD
0.5
W
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction-to-Ambient
Junction-to-Case
„
MIN
TYP
MAX
250
75
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
SYMBOL
BVDSS
ΔBVDSS/ΔTJ
IDSS
IGSS
TEST CONDITIONS
VGS=0V, ID=-250µA
ID=-250µA,
Referenced to 25°C
VDS=-16V, VGS=0V
VGS=±12V, VDS=0V
VGS(TH)
VDS =VGS, ID =-250µA
ID=-250 µA,
ΔVGS(TH)/ΔTJ
Referenced to 25°C
VGS=-4.5V, ID=-2.4A
RDS(ON)
VGS=-2.5V, ID=-2A
ID(ON)
VGS=-4.5V, VDS=-5V
gFS
VDS=-5V, ID=-2.4A
CISS
COSS
CRSS
QG
VDS=-10V, VGS=0V, f=1.0MHz
VDS=-10V, ID=-2.4A,
VGS=-4.5V
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=-10V, ID=-1A, VGS=-4.5V
Turn-ON Rise Time
tR
RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=-0.42A (Note)
Maximum Body-Diode Continuous Current
IS
Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-20
V
-12
-0.6
-1.0
mV/°C
-1
±100
µA
nA
-1.5
V
3
44
64
mV/°C
55
80
-10
mΩ
10
A
S
882
211
112
pF
pF
pF
9
2
3
13
11
25
15
14
nC
23
20
40
27
nC
nC
ns
ns
ns
ns
-0.7
-1.2
-0.42
V
A
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UDN302
„
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold Voltage
450
300
400
250
350
300
200
250
150
200
100
150
100
50
0
Drain Current vs.
Drain-Source Breakdown Voltage
50
0
0.2
0.8
0.4
0.6
Gate Threshold Voltage, VTH (V)
1.0
0
0
10
20
30
40
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State
Resistance Characteristics
3.0
ID=-2.4A
VGS=-4.5V
2.5
2.0
ID=-2A
VGS=-2.5V
1.5
1.0
0.5
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UDN302
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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