Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UK3019
Preliminary
Power MOSFET
2.5V DRIVE SILICON
N-CHANNEL MOSFET
„
DESCRIPTION
3
The UTC UK3019 is a silicon N-channel MOSFET which has
been designed to minimize on-state resistance while it provides
rugged, reliable and fast switching performance. The product is
particularly suited for low voltage, low current applications such
as small servo motor controller, power MOSFET gate drivers, and
other switching applications.
„
2
1
SOT-23-3
(JEDEC TO-236)
FEATURES
* Min VDSS =30V
* RDS(ON) =5Ω(VGS=4V)
* RDS(ON) =7Ω(VGS=2.5V)
* Pulsed ID=400mA
* Low Voltage Drive (2.5V)
„
SYMBOL
„
ORDERING INFORMATION
„
Ordering Number
Package
UK3019G-AE2-R
SOT-23-3
1
S
Pin Assignment
2
3
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
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QW-R502-311.b
UK3019
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
30
V
VGSS
±20
V
Continuous
ID
100
mA
Drain Current
Pulsed (Note 2)
IDP
400
mA
Power Dissipation (Note 3)
PD
200
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤50%
3. With each pin mounted on the recommended lands.
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
RATINGS
625
UNIT
°С/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static drain-source on-state resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=10μA
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=3V, ID=100μA
ID = 10mA, VGS = 4V
ID = 1mA, VGS = 2.5V
0.8
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
TYP MAX UNIT
5
7
1.0
±1
V
µA
µA
1.5
8
13
V
Ω
Ω
VDS=5V, VGS=0V, f = 1MHz
13
9
4
pF
pF
pF
VGS = 5V, VDD≈5V
ID = 10mA, RL = 500Ω, RG = 10Ω
15
35
80
80
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
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QW-R502-311.b
UK3019
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Pulse Width
VGS
RG
ID
D.U.T
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
tD(ON) tR
90%
90%
td(off)
tON
Switching Time Measurement Circuit
tF
tOFF
Switching Time Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-311.b
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