Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2301
Power MOSFET
Y2.8A, 20V P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET

DESCRIPTION
The UTC UT2301 is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL

3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

UT2301G-AE2-R
UT2301G-AE3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
SOT-23
1
S
S
Pin Assignment
2
3
G
D
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
23AG
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UT2301

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-2.8
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation
PD
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
θJA
RATING
110
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.45
Static Drain-Source On-State Resistance
VGS=-4.5V, ID=-2.8A
RDS(ON)
(Note 2)
VGS=-2.5V, ID=-2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-6V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-6V, VGS=-4.5V,
ID=-1A, RG=6Ω, RL=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VDS=-6V, VGS=-4.5V,
Gate-Source Charge
QGS
ID=-2.8A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS=0V, IS=-1.6A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
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TYP
95
122
MAX UNIT
-1
±100
V
µA
nA
130
190
V
mΩ
mΩ
447
127
80
pF
pF
pF
5
19
95
65
5.4
0.8
1.1
25
60
110
80
10
ns
ns
ns
ns
nC
nC
nC
-0.8
-1.2
V
-1.6
A
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Source Current (A)
Drain to Source Current (A)

On Resistance vs. Drain Current
On Resistance vs. Gate-Source
0.5
0.4
On-Resistance (Ω)
On-Resistance (Ω)
0.4
0.3
0.2
VGS=-2.5V
0.1
VGS=-4.5V
ID=-2.8A
0.3
0.2
0.1
0
0
-4
-8
-6
Drain Current (A)
-1
-10
-4
-2
-3
Gate to Source Voltage (V)
-5
Source Current (A)
Gate to Charge Voltage (V)
-2
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.1
0.01
1
Pulse Duration (sec)
Drain Current vs. Source to Drain Voltage
-2
Drain-Source On-State Resistance Characteristics
-6
-5
Drain Current, ID (A)
Drain Current, ID (A)
-1.5
-1
-0.5
-4
VGS=-4.5V,
ID=-2.8A
-3
-2
VGS=-2.5V
ID=-2A
-1
0
0
0
-300
-0.2
-0.4
-0.6
-0.8
Source to Drain Voltage, VSD (V)
-1
Drain Current vs. Gate Threshold
Voltage
-500
Drain Current, IDSS (µA)
Drain Current, ID (µA)
-0.3
-0.4
-0.5
Drain Current vs. Drain-Source
Breakdown Voltage
-400
-200
-150
-100
-50
0
-0.2
Drain to Source Voltage, VDS (V)
-250
0
-0.1
0
-350
-300
-250
-200
-150
-100
-50
-0.2
-0.4
-0.6
-0.8
Gate Threshold Voltage, VTH (V)
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0
0
-10
-20
-30
-40
-50
Drain-Source Breakdown Voltage, BVDSS(V)
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TYPICAL CHARACTERISTICS(Cont.)
(o
ds
R
Drain current, -ID (A)
n)
L
im
it

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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