UNISONIC TECHNOLOGIES CO., LTD UT2304 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 3 DESCRIPTION 2 The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost- effectiveness device by using advanced trench technology. 1 1 2 SOT-23-3 SOT-23 (JEDEC TO-236) (EIAJ SC-59) SYMBOL Drain 1 SOT-89 Gate Source ORDERING INFORMATION Ordering Number Note: UT2304G-AE2-R UT2304G-AE3-R UT2304G-AB3-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 SOT-23 SOT-89 Pin Assignment 1 2 3 S G D S G D G D S Packing Tape Reel Tape Reel Tape Reel S: Source MARKING SOT-23 / SOT-23-3 SOT-89 23DG www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-150.G UT2304 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 3) ID 2.5 A Pulsed Drain Current (Note 1, 2) IDM 10 A Power Dissipation PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA RATING 90 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 Drain-Source Leakage Current IDSS VDS=30V,VGS=0V Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA 1 Static Drain-Source On-State Resistance VGS=10V, ID=2.5A RDS(ON) (Note 2) VGS=4.5V, ID=2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=24V, VGS=4.5V, Gate-Source Charge QGS ID=2.5A Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Forward On Voltage (Note 2) VSD VGS=0V, IS=1.2A IS=2A, VGS=0V, Reverse Recovery Time (Note 2) tRR dI/dt=100A/μs Reverse Recovery Charge QRR TYP MAX UNIT 0.1 V 1 μA ±100 nA V/°C 120 62 24 5 9 11 2 3 0.8 1.8 3 117 190 V mΩ mΩ 190 pF pF pF 5 1.2 24 23 ns ns ns ns nC nC nC V ns nC Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300μs, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-150.G UT2304 RDS(ON) (Ω) Normalized RDS(ON) Drain Current,ID (A) TYPICAL CHARACTERISTICS Drain Current,ID (A) Power MOSFET 1.00 TJ=150°C TJ=25°C 0.10 0.01 0.1 0.5 0.9 1.3 Source-to-Drain Voltage, VSD (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2.05 Gate Threshold Voltage, VGS(TH) (V) Continuous Source Current, IS (A) 10.00 Forward Characteristic of Reverse Diode Gate Threshold Voltage vs. Junction Temperature 1.85 1.65 1.45 1.25 -50 0 50 100 150 Junction Temperature, TJ (°C) 3 of 5 QW-R502-150.G UT2304 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Typical Capacitance Characteristics Gate Charge Characteristics 1000 10 VDS=25V VDS=20V VDS=15V 8 6 4 CISS 100 COSS 2 CRSS 10 0 0 1 2 3 4 5 Total Gate Charge, QG (nC) 6 1 10 1ms 1 10ms 0.1 0.01 0.1 TA =25°C Single Pulse 100ms 1s DC 1 10 Drain-to-Source Voltage,VDS (V) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Normalized Thermal Response (RthJA) Maximum Safe Operating Area 100 Drain Current,ID (A) f=1.0MHZ ID=2.5A Capacitance (pF) Gate to Source Voltage, VGS (V) 12 1 25 5 13 17 21 9 Drain-to-Source Voltage,VDS (V) 29 Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.1 0.05 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak TJ = PDM x RthJA + TA RthJA = 270℃/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width, t (s) 4 of 5 QW-R502-150.G UT2304 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-150.G