Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2304
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

3
3
DESCRIPTION
2
The UT2304 is an N-Channel Power MOSFET that can achieve
the lowest possible on-resistance, extremely and cost- effectiveness
device by using advanced trench technology.
1
1
2
SOT-23-3
SOT-23
(JEDEC TO-236)
(EIAJ SC-59)
SYMBOL

Drain
1
SOT-89
Gate
Source

ORDERING INFORMATION
Ordering Number
Note:

UT2304G-AE2-R
UT2304G-AE3-R
UT2304G-AB3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
SOT-89
Pin Assignment
1
2
3
S
G
D
S
G
D
G
D
S
Packing
Tape Reel
Tape Reel
Tape Reel
S: Source
MARKING
SOT-23 / SOT-23-3
SOT-89
23DG
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-150.G
UT2304

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 3)
ID
2.5
A
Pulsed Drain Current (Note 1, 2)
IDM
10
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
θJA
RATING
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
Drain-Source Leakage Current
IDSS
VDS=30V,VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
Static Drain-Source On-State Resistance
VGS=10V, ID=2.5A
RDS(ON)
(Note 2)
VGS=4.5V, ID=2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDS=15V, VGS=10V, ID=1A,
RG=3.3Ω, RD=15 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VDS=24V, VGS=4.5V,
Gate-Source Charge
QGS
ID=2.5A
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 2)
VSD
VGS=0V, IS=1.2A
IS=2A, VGS=0V,
Reverse Recovery Time (Note 2)
tRR
dI/dt=100A/μs
Reverse Recovery Charge
QRR
TYP
MAX UNIT
0.1
V
1
μA
±100 nA
V/°C
120
62
24
5
9
11
2
3
0.8
1.8
3
117
190
V
mΩ
mΩ
190
pF
pF
pF
5
1.2
24
23
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-150.G
UT2304
RDS(ON) (Ω)
Normalized RDS(ON)
Drain Current,ID (A)
TYPICAL CHARACTERISTICS
Drain Current,ID (A)

Power MOSFET
1.00
TJ=150°C
TJ=25°C
0.10
0.01
0.1
0.5
0.9
1.3
Source-to-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2.05
Gate Threshold Voltage, VGS(TH) (V)
Continuous Source Current, IS (A)
10.00
Forward Characteristic of Reverse Diode
Gate Threshold Voltage vs. Junction
Temperature
1.85
1.65
1.45
1.25
-50
0
50
100
150
Junction Temperature, TJ (°C)
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QW-R502-150.G
UT2304
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Typical Capacitance Characteristics
Gate Charge Characteristics
1000
10
VDS=25V
VDS=20V
VDS=15V
8
6
4
CISS
100
COSS
2
CRSS
10
0
0
1
2
3
4
5
Total Gate Charge, QG (nC)
6
1
10
1ms
1
10ms
0.1
0.01
0.1
TA =25°C
Single Pulse
100ms
1s
DC
1
10
Drain-to-Source Voltage,VDS (V)
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Normalized Thermal Response (RthJA)
Maximum Safe Operating Area
100
Drain Current,ID (A)
f=1.0MHZ
ID=2.5A
Capacitance (pF)
Gate to Source Voltage, VGS (V)
12
1
25
5
13
17
21
9
Drain-to-Source Voltage,VDS (V)
29
Effective Transient Thermal Impedance
D=0.5
0.2
0.1
0.1
0.05
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak TJ = PDM x RthJA + TA
RthJA = 270℃/W
0.001
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width, t (s)
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QW-R502-150.G
UT2304
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-150.G
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