Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2308
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UTC UT2308 is N-channel Power MOSFET, designed
with high density cell, with fast switching speed, ultra low
on-resistance and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UT2308G-AE2-R
UT2308G-AE3-R
Pin Assignment: S: Source
Package
G: Gate
SOT-23-3
SOT-23
D: Drain
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
23GG
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-128.E
UT2308

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current
ID
2.7
A
Power Dissipation
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
Drain-Source Leakage Current
IDSS
VDS =20 V, VGS =0 V
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±10V
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
VGS =4.5 V, ID =1A
Static Drain-Source On-State
RDS(ON)
Resistance (Note2)
VGS =2.5 V, ID =1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
Gate Source Charge
QGS
VGS=4.5V
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width≤300μs, duty cycle≤2%.
3. Surface mounted on FR4 board t≤5 sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
20
0.4
0.8
1.0
±100
V
µA
nA
1.0
80
110
V
mΩ
mΩ
215
65
45
pF
pF
pF
3.8
0.7
0.9
nC
nC
nC
0.8
1.2
V
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QW-R502-128.E
UT2308
Power MOSFET
TYPICAL CHARACTERICS
■
Drain Current vs. Drain-Source Breakdown
Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (μA)
Drain Current, ID (μA)
250
200
150
100
50
150
100
50
0
0
5
10
15
20
25
30
0
35
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-Source Breakdown Voltage, BVDSS (V)
Gate Threshold Voltage, VTH (V)
Static Drain-Source On-State Resistance
Drain-Source Current vs. Source to Drain
Voltage
1.2
Continuous Drain-Source Current, ISD (A)
1.2
1
Drain Current, ID (A)
200
VGS=4.5V
0.8
0.6
VGS=2.5V
0.4
0.2
0
0
10
20
30
40
50
60
70
Drain to Source Voltage, VDS(mV)
1.4
1
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source to Drain Voltage, VSD(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-128.E
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