UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Note: 2N7002DWG-AL6-R Pin Assignment: G: Gate D: Drain Package SOT-363 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel S: Source MARKING 3PG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.D 2N7002DW Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Continuous Gate Source Voltage Non Repetitive(tP<50μs) Continuous Drain Current Pulsed Power Dissipation Derated Above 25°C Junction Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TJ TSTG RATINGS 60 60 20 40 300 800 200 1.6 + 150 -55 ~ +150 UNIT V V V mA mW mW/°C °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient RATINGS 625 (Note1) UNIT C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10μA VDS=60V, VGS =0V VGS =20V, VDS=0V VGS =-20V, VDS=0V 60 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) 1 Drain-Source On-Voltage VDS (ON) Static Drain-Source On-Resistance RDS (ON) VGS = VDS, ID=250μA VGS = 10V, ID=300mA VGS = 5.0V, ID=50mA VGS=10V, ID=300mA,TJ=125°C VGS =5.0V, ID=50mA Gate-Source Leakage Current DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V,VGS=0V,f=1.0MHz TYP 2.1 0.6 0.09 20 11 4 VDD=30V, RL=150Ω ID=200mA, VGS =10V RGEN =25Ω VDD=30V, RL=25Ω ID=200mA, VGS=10V Turn-Off Time tOFF RGEN =25Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=300mA (Note ) 0.88 Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% Turn-On Time tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 1 100 -100 V μA nA nA 2.5 3.75 1.5 13.5 7.5 V Ω Ω 50 25 5 pF pF pF 20 nS 20 nS 1.5 V 0.8 A 300 mA V 2 of 6 QW-R502-534.D 2N7002DW Power MOSFET TEST CIRCUIT AND WAVEFORM VDD RL VIN VOUT D VGS RGEN DUT G S Fig. 1 tON tOFF tD(ON) tR tD(OFF) tF 90% 90% Output, VOUT 10% 10% Inverted 90% Input, VIN 50% 50% 10% Pulse Width Fig. 2 Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-534.D 2N7002DW TYPICAL CHARACTERISTICS Normalized Drain-Source ON-Resistance, RDS (ON)(Ω) Drain-Source Current, ID (A) Power MOSFET On-Resistance Varisation with Drain Current and Temperature On-Resistance Varisation with Temperature 3 VGS=10V ID=300mA 1.75 Normalized Drain-Source ONResistance, RDS (ON)(Ω) Normalized Drain-Source ON- Resistance, RDS(ON)(Ω) 2 1.5 1.25 1 0.75 VGS =10V 2.5 TJ=125°C 2 1.5 25°C 1 0.5 0 0.5 -50 - 25 0 25 50 100 125 150 75 0.4 0 1.1 125°C 0.6 0.4 0.2 0 Normalized Gate-Source Threshold Voltage, VGS(TH)(V) 25°C 0.8 Drain Current, ID (A) 2 Gate Threshold Varisation with Temperature Transfer Characteristics VDS=10V 1.6 Drain Current,ID (A) Junction Temperature, TJ (°C) 1.0 1.2 0.8 VGS = VDS ID = 1mA 1.05 1 0.95 0.9 0.85 0.8 0 2 4 6 8 10 Gate to Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 4 of 6 QW-R502-534.D 2N7002DW Power MOSFET TYPICAL CHARACTERICS (Cont.) Body Diode Forward Voltage Varisation with Temperature Breakdown Voltage Varisation with Temperature 2 ID = 250μA VGS=0V 1 1.075 Reverse Drain Current, IS (A) Normalized Drain-Source Breakdown Voltage, BVDSS(V) 1.1 1.05 1.025 1 0.975 0.95 0.5 TJ =125°C 25°C 0.1 0.05 0.01 0.005 0.001 0.925 -50 -25 0 25 50 75 0.2 100 125 150 0.4 0.6 0.8 1 1.2 1.4 Body Diode Forward Voltage, VSD (V) Capacitance (pF) Gate-Source Voltage, VGS (V) Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-534.D 2N7002DW Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-534.D