Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N7002DW
Power MOSFET
300mA, 60V DUAL
N-CHANNEL POWER MOSFET

DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES

* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

2N7002DWG-AL6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-363
1
S1
Pin Assignment
2
3
4
5
G1 D2 S2 G2
6
D1
Packing
Tape Reel
S: Source
MARKING
3PG
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QW-R502-534.D
2N7002DW

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted.)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
Continuous
Gate Source Voltage
Non Repetitive(tP<50μs)
Continuous
Drain Current
Pulsed
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VDGR
VGSS
ID
PD
TJ
TSTG
RATINGS
60
60
20
40
300
800
200
1.6
+ 150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient

RATINGS
625 (Note1)
UNIT
C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSSF
IGSSR
VGS=0V, ID=10μA
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
60
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
1
Drain-Source On-Voltage
VDS (ON)
Static Drain-Source On-Resistance
RDS (ON)
VGS = VDS, ID=250μA
VGS = 10V, ID=300mA
VGS = 5.0V, ID=50mA
VGS=10V, ID=300mA,TJ=125°C
VGS =5.0V, ID=50mA
Gate-Source Leakage Current
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
TYP
2.1
0.6
0.09
20
11
4
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
Turn-Off Time
tOFF
RGEN =25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
0.88
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Turn-On Time
tON
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MAX
UNIT
1
100
-100
V
μA
nA
nA
2.5
3.75
1.5
13.5
7.5
V
Ω
Ω
50
25
5
pF
pF
pF
20
nS
20
nS
1.5
V
0.8
A
300
mA
V
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2N7002DW

Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
RGEN
DUT
G
S
Fig. 1
tON
tOFF
tD(ON)
tR
tD(OFF)
tF
90%
90%
Output, VOUT
10%
10%
Inverted
90%
Input, VIN
50%
50%
10%
Pulse Width
Fig. 2 Switching Waveforms
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2N7002DW
TYPICAL CHARACTERISTICS
Normalized Drain-Source
ON-Resistance, RDS (ON)(Ω)
Drain-Source Current, ID (A)

Power MOSFET
On-Resistance Varisation with Drain
Current and Temperature
On-Resistance Varisation with Temperature
3
VGS=10V
ID=300mA
1.75
Normalized Drain-Source ONResistance, RDS (ON)(Ω)
Normalized Drain-Source
ON- Resistance, RDS(ON)(Ω)
2
1.5
1.25
1
0.75
VGS =10V
2.5
TJ=125°C
2
1.5
25°C
1
0.5
0
0.5
-50
- 25
0
25
50
100 125 150
75
0.4
0
1.1
125°C
0.6
0.4
0.2
0
Normalized Gate-Source Threshold
Voltage, VGS(TH)(V)
25°C
0.8
Drain Current, ID (A)
2
Gate Threshold Varisation with Temperature
Transfer Characteristics
VDS=10V
1.6
Drain Current,ID (A)
Junction Temperature, TJ (°C)
1.0
1.2
0.8
VGS = VDS
ID = 1mA
1.05
1
0.95
0.9
0.85
0.8
0
2
4
6
8
10
Gate to Source Voltage, VGS (V)
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-50
-25
0
25
50
75
100 125 150
Junction Temperature, TJ (°C)
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
Power MOSFET
TYPICAL CHARACTERICS (Cont.)
Body Diode Forward Voltage Varisation
with Temperature
Breakdown Voltage Varisation
with Temperature
2
ID = 250μA
VGS=0V
1
1.075
Reverse Drain Current, IS (A)
Normalized Drain-Source Breakdown
Voltage, BVDSS(V)
1.1
1.05
1.025
1
0.975
0.95
0.5
TJ =125°C
25°C
0.1
0.05
0.01
0.005
0.001
0.925
-50
-25
0
25
50
75
0.2
100 125 150
0.4
0.6
0.8
1
1.2
1.4
Body Diode Forward Voltage, VSD (V)
Capacitance (pF)
Gate-Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
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QW-R502-534.D
2N7002DW
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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