AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary The AOT296L/AOB296L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID (at VGS=10V) 100V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 10mΩ conduction and switching power losses are minimized RDS(ON) (at VGS=6V) < 12.5mΩ (< 12.2mΩ∗) (< 9.7mΩ∗) due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D Bottom View D D D D G G D S S D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 40 A EAS 80 mJ 107 W 54 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 9.5 PDSM TA=70°C ±20 7.5 PD TC=100°C Units V 180 IDSM TA=70°C Maximum 100 50 IDM TA=25°C Continuous Drain Current S 70 ID TC=100°C S G -55 to 175 Typ 12 48 1.1 °C Max 15 60 1.4 Units °C/W °C/W °C/W * Surface mount package TO263 Prelim: Sep. 2012 www.aosmd.com Page 1 of 6 AOT296L/AOB296L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 180 ±100 nA 2.9 3.4 V 8.2 10 14.2 17.2 9.7 12.5 mΩ VGS=10V, ID=20A TO263 7.9 9.7 mΩ VGS=6V, ID=20A TO263 9.4 12.2 mΩ VGS=10V, ID=20A TO220 VGS=6V, ID=20A TO220 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 62 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz S 1 V 70 A 2785 pF 238 pF 12 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 0.25 mΩ pF 0.55 0.85 Ω 37 52 nC 16.5 24 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 11.5 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 8.5 ns 29 ns 4 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 35 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 210 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Prelim: Sep. 2012 www.aosmd.com Page 2 of 6 AOT296L/AOB296L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 6V 100 80 80 60 ID(A) ID (A) 5V 60 40 40 125°C 4.5V 25°C 20 20 VGS=4.0V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 14 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2.4 12 RDS(ON) (mΩ Ω) 3 VGS=6V 10 8 VGS=10V 6 2.2 VGS=10V ID=20A 2 1.8 17 5 2 10 1.6 1.4 1.2 VGS=6V ID=20A 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 22 1.0E+02 ID=20A 1.0E+01 40 125°C 1.0E+00 14 IS (A) RDS(ON) (mΩ Ω) 18 125°C 1.0E-01 1.0E-02 10 1.0E-03 25°C 25°C 6 1.0E-04 1.0E-05 2 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Prelim: Sep. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT296L/AOB296L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 VDS=50V ID=20A Ciss 3000 Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 Coss 1500 1000 2 500 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 500 1000.0 10µs 10µs 100.0 RDS(ON) limited 100µs 10.0 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) Crss 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.4°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Prelim: Sep. 2012 www.aosmd.com Page 4 of 6 AOT296L/AOB296L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C 100 80 60 40 20 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 80 TA=25°C 60 50 100 Power (W) Current rating ID(A) 70 40 30 17 5 2 10 10 20 10 0 1 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0100 0.1 1 10 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 0.001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Prelim: Sep. 2012 www.aosmd.com Page 5 of 6 AOT296L/AOB296L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Prelim: Sep. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6