AOT298L/AOB298L/AOTF298L 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) 100V 58A/33A RDS(ON) (at VGS=10V) < 14.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Notebook Adaptor, TV Power Supply applications Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT298L D S G AOTF298L D S S AOB298L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT298L AOB298L AOTF298L TO-220 TO-263 TO-220F Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT298L/AOB298L Symbol Drain-Source Voltage VDS 100 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current V 26 A 130 9 IDSM C Units V 33 41 IDM TA=70°C Current ±20 58 ID TC=100°C AOTF298L A 7 IAS, IAR 20 A Avalanche energy L=0.1mH C EAS, EAR 20 mJ VDS Spike VSPIKE 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.3.0: March 2016 Steady-State Steady-State RθJA RθJC 50 16 -55 to 175 AOT298L/AOB298L 15 60 1.5 www.aosmd.com W W 1.33 TJ, TSTG Symbol t ≤ 10s V 33 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 110 100 °C AOTF298L 15 60 4.5 Units °C/W °C/W °C/W Page 1 of 7 AOT298L/AOB298L/AOTF298L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS，ID=250µA 2.7 VGS=10V, VDS=5V 130 TJ=55°C VGS=10V, ID=20A ±100 nA 3.3 4.1 V 12 14.5 19 24 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=20A µA 5 RDS(ON) Output Capacitance Units 1 Zero Gate Voltage Drain Current Coss Max V VDS=100V, VGS=0V IDSS ID(ON) Typ 0.8 mΩ S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 Ω 19 27 nC 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns IF=20A, dI/dt=500A/µs 39 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: March 2016 www.aosmd.com Page 2 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 80 80 60 ID(A) ID (A) 60 6V 40 40 125°C 20 20 25°C VGS=5V 0 0 0 1 2 3 4 2 5 20 2.2 18 2 Normalized On-Resistance RDS(ON) (mΩ) 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 VGS=10V 14 3 12 10 VGS=10V ID=20A 1.8 17 5 2 10 1.6 1.4 1.2 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=20A 1.0E+01 40 32 1.0E+00 IS (A) RDS(ON) (mΩ) 125°C 125°C 24 1.0E-01 25°C 1.0E-02 1.0E-03 16 1.0E-04 25°C 1.0E-05 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: March 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=50V ID=20A 1600 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1200 800 Coss 400 0 Crss 0 0 4 8 12 16 20 0 20 RDS(ON) limited 100 600 100µs Power (W) ID (Amps) 80 TJ(Max)=175°C TC=25°C 10µs 10µs 100.0 1ms 10ms 1.0 0.1 60 800 1000.0 10.0 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics DC 200 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 17 5 2 10 400 1 10 100 1000 0 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT298L and AOB298L (Note F) 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT298L and AOB298L (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F) Rev.3.0: March 2016 www.aosmd.com Page 4 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 800 10µs 100.0 600 RDS(ON) limited 10.0 100µs Power (W) ID (Amps) TJ(Max)=175°C TC=25°C 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 400 200 1 10 100 0 0.0001 1000 VDS (Volts) 0.001 0.01 0.1 1 100 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case for 17 AOTF298L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF298L (Note F) 5 2 10 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.5°C/W 1 0 18 0.1 PD Ton Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 40 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F) 40 Power Dissipation (W) 50 Current rating ID(A) 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 15: Current De-rating for AOTF298 F) Rev.3.0: March 2016 175 (Note www.aosmd.com 0 25 50 75 100 125 150 TCASE (°C) Figure 16: Power De-rating for AOTF298L F) 175 (Note Page 5 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) Current rating ID(A) 80 60 40 20 90 60 30 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TCASE (°C) Figure 18: Power De-rating for AOT298L and AOB298L (Note F) TCASE (°C) Figure 17: Current De-rating for AOT298L and AOB298L (Note F) 100 10000 IAR (A) Peak Avalanche Current TA=25°C Power (W) 1000 TA=25°C TA=100°C 17 5 2 10 100 10 TA=150°C TA=125°C 1 1E-05 10 1 10 100 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 20: Single Pulse Power Rating Junction-toAmbient (Note H) Time in avalanche, tA (µs) Figure 19: Single Pulse Avalanche capability (Note C) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse 0.001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: March 2016 www.aosmd.com Page 6 of 7 AOT298L/AOB298L/AOTF298L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: March 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7