Datasheet

AOT29S50/AOB29S50/AOTF29S50
500V 29A α MOS
TM
Power Transistor
General Description
Product Summary
The AOT29S50 & AOB29S50 & AOTF29S50 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
600V
IDM
120A
RDS(ON),max
0.15Ω
Qg,typ
26.6nC
Eoss @ 400V
6.3µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT29S50L & AOB29S50L & AOTF29S50L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
AOT29S50
G
D S
G
D
AOTF29S50
VGS
Gate-Source Voltage
TC=25°C
Pulsed Drain Current
TC=100°C
C
ID
S
AOB29S50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
AOT29S50/AOB29S50
VDS
Drain-Source Voltage
Continuous Drain
Current
G
S
S
G
AOTF29S50
500
AOTF29S50L
±30
29
18
IDM
Units
V
V
29*
29*
18*
18*
A
120
Avalanche Current C
IAR
7.5
A
Repetitive avalanche energy C
EAR
110
mJ
Single pulsed avalanche energy G
EAS
TC=25°C
PD
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
J
purpose, 1/8" from case for 5 seconds
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
mJ
50
37.9
W
2.9
0.4
0.3
W/ oC
100
20
-55 to 150
dv/dt
A
RθCS
Maximum Case-to-sink
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: March 2012
608
357
V/ns
°C
300
°C
AOT29S50/AOB29S50
AOTF29S50
AOTF29S50L
65
65
65
°C/W
0.5
0.35
-2.5
-3.3
°C/W
°C/W
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Units
Page 1 of 7
AOT29S50/AOB29S50/AOTF29S50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
500
-
-
ID=250µA, VGS=0V, TJ=150°C
550
600
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
-
-
1
VDS=400V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
3.9
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=14.5A, TJ=25°C
-
0.13
0.15
Ω
VGS=10V, ID=14.5A, TJ=150°C
-
0.34
0.4
Ω
IS=14.5A,VGS=0V, TJ=25°C
-
0.85
-
V
Maximum Body-Diode Continuous Current
-
-
29
A
Maximum Body-Diode Pulsed Current
-
-
120
A
-
1312
-
pF
-
88
-
pF
-
78
-
pF
-
227
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.5
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.8
-
Ω
-
26.6
-
nC
-
6.2
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 400V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=400V, ID=14.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
9.2
-
nC
tD(on)
Turn-On DelayTime
-
28
-
ns
tr
Turn-On Rise Time
-
39
-
ns
tD(off)
Turn-Off DelayTime
-
103
-
ns
tf
trr
Turn-Off Fall Time
-
40
-
ns
VGS=10V, VDS=400V, ID=14.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
387
-
ns
Irm
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
29.6
-
Qrr
Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V
-
7.3
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: March 2012
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Page 2 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
50
10V
10V
45
35
40
7V
35
6V
ID (A)
ID (A)
6V
25
30
25
7V
30
5.5V
20
5.5V
15
20
15
10
5V
10
5V
5
VGS=4.5V
5
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
0.5
1000
VDS=20V
-55°C
0.4
100
RDS(ON) (Ω )
125°C
ID(A)
10
1
25°C
0.3
VGS=10V
0.2
0.1
0.1
0.0
0.01
2
4
6
8
0
10
20
30
40
50
60
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=14.5A
BVDSS (Normalized)
Normalized On-Resistance
10
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev0: March 2012
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0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=400V
ID=14.5A
25°C
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
10
8
1000
Eoss(uJ)
Capacitance (pF)
Ciss
Coss
100
Eoss
6
4
Crss
10
2
0
1
0
100
200
300
400
VDS (Volts)
Figure 9: Capacitance Characteristics
100
200
300
VDS (Volts)
Figure 10: Coss stroed Energy
400
500
1000
1000
100
RDS(ON)
limited
10µs
RDS(ON)
limited
10µs
10
100µs
1ms
1
DC
ID (Amps)
100
ID (Amps)
0
500
10
100µs
1ms
1
10ms
10ms
DC
0.1
0.1
TJ(Max)=150°C
TC=25°C
0.01
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)29S50 (Note F)
Rev0: March 2012
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0.1
1
10
VDS (Volts)
100
1000
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF29S50(Note F)
Page 4 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
1000
600
10µs
RDS(ON)
limited
10
100µs
1ms
1
10ms
0.1s
DC
0.1
TJ(Max)=150°C
TC=25°C
1s
500
EAS(mJ)
ID (Amps)
100
400
300
200
100
0.01
0
0.1
1
10
VDS (Volts)
100
1000
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
25
50
75
100
125
TCASE (°C)
Figure 14: Avalanche energy
150
175
30
Current rating ID(A)
25
20
15
10
5
0
0
25
75
100
125
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev0: March 2012
50
150
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Page 5 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)29S50 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF29S50 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF29S50L (Note F)
Rev0: March 2012
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Page 6 of 7
AOT29S50/AOB29S50/AOTF29S50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: March 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7