AOT400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT400L is a Green Product ordering option. AOT400 and AOT400L are electrically identical. VDS (V) = 75V ID = 110 A (VGS = 10V) RDS(ON) < 4.7 mΩ (VGS = 10V) RDS(ON) < 5.2 mΩ (VGS = 6V) TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range V A 110 IAR 100 A EAR 1500 mJ 200 300 W 150 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 110 TC=100°C Pulsed Drain Current Avalanche Current Maximum 75 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 65 0.25 75 0.5 °C/W °C/W AOT400 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 100 VSD IS 7.2 8.2 VGS=6V, ID=30A 4.6 5.2 VDS=5V, ID=30A 106 VDS=15V, ID=70A 200 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 0.7 8390 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A µA nA V A 4.7 IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Coss 4 4.2 Static Drain-Source On-Resistance Forward Transconductance 2.8 200 VGS=10V, ID=30A gFS 5 2 Units V TJ=55°C IGSS Max 75 VDS=75V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 1 V 110 A 10500 pF 1060 pF 450 pF 1.2 1.5 Ω 167 210 nC 40 nC Qgd Gate Drain Charge 45 nC tD(on) Turn-On DelayTime 29 ns tr Turn-On Rise Time 41 ns 90 ns 34 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω IF=30A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 64 80 180 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 80 10V 6V 175 VDS=5V 150 60 5V ID(A) ID (A) 125 100 125°C 40 4.5V 75 25°C 50 20 VGS=4V 25 0 0 0 1 2 3 4 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 6 Normalized On-Resistance 2.2 VGS=6V 5 RDS(ON) (mΩ) 2.5 4 VGS=10V 3 2 VGS=10V, 30A 1.8 1.6 VGS=6V,30A 1.4 1.2 1 2 0 20 40 60 80 0.8 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 12 1.0E+01 ID=30A 10 125°C 8 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 1.0E-01 6 25°C 1.0E-02 25°C 4 1.0E-03 1.0E-04 2 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 10 VDS=30V ID=30A 10 Ciss Capacitance (nF) VGS (Volts) 8 6 4 8 6 4 Coss 2 Crss 2 0 0 0 40 80 120 160 200 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 1000 TJ(Max)=175°C, TA=25°C 10µs RDS(ON) limited 10ms 10.0 DC 600 400 1.0 200 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TA=25°C 800 100µs Power (W) ID (Amps) 100.0 75 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=0.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOT400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 tA = 60 40 L ⋅ ID BV − VDD TA=25°C 20 0 0.00001 150 100 0 0.0001 0.001 0.01 100 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 120 Current rating ID(A) 200 50 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 250 175 175