Datasheet

AOT404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOT404 is
Pb-free (meets ROHS & Sony 259 specifications).
AOT404L is a Green Product ordering option.
AOT404 and AOT404L are electrically identical.
VDS (V) = 105V
ID = 40 A (VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V) @ 20A
RDS(ON) < 31 mΩ (VGS = 6V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
±25
V
Junction and Storage Temperature Range
A
28
ID
IDM
100
IAR
20
A
EAR
200
mJ
100
PD
TC=100°C
W
50
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Steady-State
Symbol
RθJA
Maximum Junction-to-Case B
Steady-State
RθJC
Alpha Omega Semiconductor, Ltd.
Units
V
40
TC=100°C
Pulsed Drain Current
Maximum
105
°C
Typ
50
Max
60
Units
°C/W
1
1.5
°C/W
AOT404
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=10mA, VGS=0V
105
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
100
VGS=10V, ID=20A
53
VGS=6V, ID=20A
24
31
VDS=5V, ID=20A
50
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
0.73
2038
nA
V
mΩ
mΩ
1
V
55
A
2445
204
VGS=0V, VDS=0V, f=1MHz
1.3
1.56
38.5
46
pF
pF
85
VGS=10V, VDS=50V, RL=2.7Ω,
RGEN=3Ω
µA
S
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=50V, ID=30A
Units
A
44
gFS
Crss
4
28
Static Drain-Source On-Resistance
Output Capacitance
3.2
21.5
RDS(ON)
Coss
Max
V
VDS=84V, VGS=0V
VGS(th)
IS
Typ
pF
Ω
nC
7.7
nC
13.4
nC
12.7
ns
8.2
ns
31.5
ns
11.2
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
61.6
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
172.4
74
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
VDS=5V
20
6V
ID(A)
ID (A)
60
40
125°C
10
5V
25°C
20
VGS=4.5V
0
0
0
1
2
3
4
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
40
2.4
Normalized On-Resistance
RDS(ON) (mΩ)
2.5
30
VGS=6V
20
VGS=10V
2.2
VGS=10V, 20A
2
1.8
1.6
VGS=6V,20A
1.4
1.2
1
10
0
10
20
30
0.8
40
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
60
1.0E+01
50
125°C
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
ID=30A
40
1.0E-01
1.0E-02
25°C
30
1.0E-03
25°C
1.0E-04
20
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
10
VDS=50V
ID=30A
Ciss
Capacitance (nF)
VGS (Volts)
8
6
4
2
1
Coss
2
0
Crss
0
0
10
20
30
40
0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
300
TJ(Max)=175°C, TA=25°C
TJ(Max)=175°C
TA=25°C
10
100µs
RDS(ON)
limited
Power (W)
ID (Amps)
100
1ms, DC
200
100
1
0
0.0001
0.1
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
0.1
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
ID(A), Peak Avalanche Current
t
A
=
L ⋅
BV
40
I
D
− V DD
Power Dissipation (W)
60
TA=25°C
TA=150°C
20
0
0.000001
0.0001
0.001
40
30
20
10
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
Current rating ID(A)
50
0
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
100
175
175