AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT410L/AOB410L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V ID (at VGS=10V) 150A RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) RDS(ON) (at VGS= 7V) < 7.5mΩ (< 7.2mΩ∗) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO-220 Top View Bottom View Top View Bottom View D D D D D G D G G SD S G S G S S AOB410L AOT410L Orderable Part Number Package Type Form Minimum Order Quantity AOT410L AOB410L TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case IAS,IAR 50 A EAS,EAR 125 mJ 333 Steady-State Steady-State W 167 1.9 RθJA RθJC W 1.2 TJ, TSTG Symbol t ≤ 10s A 10 PDSM TA=70°C A 12 PD TC=100°C V 405 IDSM TA=70°C ±25 108 IDM TA=25°C Continuous Drain Current Units V 150 ID TC=100°C C Maximum 100 -55 to 175 Typ 12 54 0.35 °C Max 15 65 0.45 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.3.0: November 2013 www.aosmd.com Page 1 of 7 AOT410L/AOB410L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current 10 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=5V ,ID=250µA ID(ON) On state drain current 8.8 11 VGS=7V, ID=20A T0220 5.8 7.5 VGS=10V, ID=20A TO263 4.8 6.2 5.5 70 7.2 mΩ S 0.63 Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V 6.5 VSD Reverse Transfer Capacitance nA 4 5.1 Forward Transconductance Crss ±100 405 gFS Output Capacitance 3 µA VGS=10V, VDS=5V VGS=7V, ID=20A TO263 VDS=5V, ID=20A Coss 50 2 Units VGS=10V, ID=20A T0220 Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IGSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A A mΩ mΩ mΩ 1 V 150 A 5290 6622 7950 pF 415 594 770 pF 130 215 300 pF 0.3 0.64 1 Ω 85 107 129 nC 23 28.5 34 nC 24 40 56 nC 28 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω ns 22 ns 43.5 ns 14.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 27 35 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 124 177 230 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: November 2013 www.aosmd.com Page 2 of 7 AOT410L/AOB410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 180 10V 6.5V 6V 120 VDS=5V 150 7V 120 ID(A) ID (A) 90 60 90 5.5V 60 30 125°C 30 VGS=5V 0 25°C 0 0 1 2 3 4 5 3 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 7 Normalized On-Resistance 2.4 7 RDS(ON) (mΩ Ω) 4 VGS=7V 6 5 4 VGS=10V 3 2.2 VGS=10V ID=20A 2 1.8 17 5 2 VGS=7V 10 1.6 1.4 ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 200 Temperature (°C) 18 Temperature Figure 4: On-Resistance vs. Junction (Note E) 12 1.0E+02 ID=20A 1.0E+01 40 125°C 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 10 8 125°C 1.0E-01 1.0E-02 6 25°C 25°C 1.0E-03 4 1.0E-04 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT410L/AOB410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10 VDS=50V ID=20A 8000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 6000 4000 Coss 2000 0 Crss 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 1000.0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 5000 10µs RDS(ON) limited 10µs 100µs 1ms 10.0 Power (W) ID (Amps) 100.0 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 4000 TJ(Max)=175°C TC=25°C 3000 17 5 2 10 2000 1000 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.00001 0.0001 0.001 0.01 0.1 01 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.45°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: November 2013 www.aosmd.com Page 4 of 7 AOT410L/AOB410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 TA=100°C TA=25°C 100.0 TA=150°C TA=125°C 10.0 250 200 150 100 50 0 1.0 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 160 Power (W) Current rating ID(A) TA=25°C 120 80 100 17 5 2 10 10 40 1 0 0.0001 0 25 50 75 100 125 150 0.01 1 100 10000 0 Pulse Width (s) 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: November 2013 www.aosmd.com Page 5 of 7 AOT410L/AOB410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 280 40 35 35 30 Qrr 200 25 25ºC 160 di/dt=800A/µs 30 20 125ºC 5 4 25ºC Irm (A) Qrr (nC) 240 40 3 trr 25 2 125ºC 25ºC 20 S 125ºC di/dt=800A/µs trr (ns) 320 1 S Irm 25ºC 80 0 5 10 15 20 25 15 15 10 10 30 -1 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 280 40 240 160 20 25 25ºC 20 125ºC IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2 40 125ºC 30 25ºC 1.5 trr 10 Irm 10 125ºC 0 500 0 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev.3.0: November 2013 0.5 S 25ºC 0 0 1 20 25ºC 80 40 30 Is=20A Irm (A) Qrr (nC) 15 50 30 Qrr 10 125ºC 200 120 5 trr (ns) Is=20A 0 125ºC S 120 www.aosmd.com 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOT410L/AOB410L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.3.0: November 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7