Datasheet

AOT412/AOB412L
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOT412 & AOB412L are fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with
low gate charge & low Qrr.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
VDS
100V
ID (at VGS=10V)
60A
RDS(ON) (at VGS=10V)
< 15.8mΩ
RDS(ON) (at VGS = 7V)
< 19.4mΩ
100% UIS Tested
100% Rg Tested
TO220
Top View
Bottom View
Top View
TO-263
D2PAK
Bottom View
D
D
D
D
D
G
D
S
G
AOT412
S
D
G
S
G
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev2: Jul 2011
Steady-State
Steady-State
A
IAS,IAR
47
A
EAS,EAR
110
mJ
150
W
75
2.6
RθJA
RθJC
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W
1.7
TJ, TSTG
Symbol
t ≤ 10s
A
8.2
PDSM
Junction and Storage Temperature Range
V
6.6
PD
TA=25°C
±25
44
IDSM
TA=70°C
Units
V
140
IDM
TA=25°C
Continuous Drain
Current
Maximum
100
60
ID
TC=100°C
S
S
AOB412L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current
G
-55 to 175
Typ
15
40
0.7
°C
Max
18
48
1
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT412/AOB412L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250µA, VGS=0V
100
Typ
10
TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ,ID=250µA
2.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
Units
V
VDS=100V, VGS=0V
Zero Gate Voltage Drain Current
Max
µA
100
nA
3.2
3.8
V
13.2
15.8
25
30
VGS=7V, ID=20A
TO220
15.5
19.4
VGS=10V, ID=20A
TO263
12.9
15.5
15.2
30
19.1
Forward Transconductance
VGS=7V, ID=20A
TO263
VDS=5V, ID=20A
mΩ
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
VGS=10V, ID=20A
TO220
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2150
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
VGS=10V, VDS=50V, ID=20A
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
A
2680
mΩ
mΩ
mΩ
1
V
60
A
3220
pF
180
260
340
pF
60
100
140
pF
0.5
1
1.5
Ω
36
45
54
nC
14
17
20
nC
15
21
nC
9
VGS=10V, VDS=50V, RL=2Ω,
RGEN=3Ω
19
ns
16
ns
27
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
15
22
10
29
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
67
96
125
ns
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Jul 2011
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Page 2 of 7
AOT412/AOB412L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
100
VDS=5V
10V
120
7.5V
7V
80
6.5V
60
80
ID(A)
ID (A)
100
60
40
6V
40
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
2
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
17
Normalized On-Resistance
2.6
16
RDS(ON) (mΩ )
25°C
125°C
20
VGS=5.5V
20
VGS=7V
15
14
VGS=10V
13
12
2.4
VGS=10V
ID=20A
2.2
2
17
5
2
10
VGS=7V
1.8
1.6
1.4
1.2
ID=20A
1
0.8
11
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
33
1.0E+02
ID=20A
1.0E+01
40
125°C
23
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ )
28
18
25°C
1.0E-01
1.0E-02
25°C
13
1.0E-03
1.0E-04
8
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev2: Jul 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT412/AOB412L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3600
10
VDS=50V
ID=20A
3200
Ciss
2800
Capacitance (pF)
VGS (Volts)
8
6
4
2400
2000
1600
1200
800
2
Coss
Crss
400
0
0
0
10
20
30
40
0
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
RDS(ON)
limited
4000
10µs
100µs
Power (W)
ID (Amps)
100.0
1ms
DC
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
100
17
5
2
10
2000
1000
0
0.01
0.1
1
10
VDS (Volts)
100
1000
1E-05 0.0001 0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=175°C
TC=25°C
3000
0.0
Zθ JC Normalized Transient
Thermal Resistance
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
5000
1000.0
10.0
20
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1°C/W
40
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2: Jul 2011
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Page 4 of 7
AOT412/AOB412L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
100
IAR (A) Peak Avalanche Current
TA=25°C
140
Power Dissipation (W)
TA=100°C
10
TA=150°C
TA=125°C
1
120
100
80
60
40
20
0
0.1
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
150
175
1000
70
60
TA=25°C
50
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
40
30
20
100
17
5
2
10
10
10
0
1
0
25
50
75
100
125
150
175
0.00001
0.001
0.1
10
1000
0
TCASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=48°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev2: Jul 2011
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Page 5 of 7
AOT412/AOB412L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
2
125ºC
di/dt=800A/µs
125ºC
180
25
40
1.5
30
25ºC
100
20
Qrr
60
Irm (A)
140
trr (ns)
Qrr (nC)
20
125ºC
25ºC
trr
15
1
10
25ºC
S
10
Irm
125ºC
25ºC
20
0
0
5
10
15
20
25
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
180
15
20
25
30
2
30
40
Is=20A
125ºC
1.5
30
100
80
25ºC
Qrr
20
25ºC
20
trr
1
15
25ºC
10
125ºC
60
trr (ns)
25
120
Irm (A)
Qrr (nC)
10
35
125ºC
140
5
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
50
Is=20A
160
0.5
5
S
0.5
10
40
5
Irm
25ºC
125ºC
20
0
0
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev2: Jul 2011
S
di/dt=800A/µs
S
220
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AOT412/AOB412L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev2: Jul 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7