Datasheet

AOT414
100V N-channel MOSFET
General Description
Product Summary
The AOT414 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.AOT414 and AOT414L are electrically
identical.
VDS
ID (at VGS=10V)
100V
43A
RDS(ON) (at VGS=10V)
< 25mΩ
RDS(ON) (at VGS = 7V)
< 31mΩ
100% UIS Tested
100% Rg Tested
TO220
Bottom View
Top View
D
D
G
S
G
D
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
100
5.6
IDSM
TA=70°C
±25
31
IDM
TA=25°C
Units
V
43
ID
TC=100°C
Maximum
100
A
4.5
Avalanche Current C
IAR
28
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
39
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev1: May 2012
1.9
Steady-State
Steady-State
RθJA
RθJC
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W
1.23
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
W
58
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
115
PD
Typ
11.6
54
0.7
°C
Max
13.9
65
1.3
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
10
TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
nA
4
V
20.5
25
36
43
VGS=7V, ID=15A
25
31
mΩ
37
1
V
40
A
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
0.66
mΩ
S
1400
1770
2200
pF
VGS=0V, VDS=50V, f=1MHz
115
165
214
pF
33
55
80
pF
VGS=0V, VDS=0V, f=1MHz
0.3
0.65
1.0
Ω
14
28
42
nC
4
9
14
nC
10
14
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
µA
100
Static Drain-Source On-Resistance
Output Capacitance
Units
3.3
VGS=10V, ID=20A
Coss
Max
V
VDS=100V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
6
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
20
29
38
Qrr
25
36
46
trr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
12
20
26
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60
82
110
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
12
ns
4
ns
17
ns
5
ns
ns
nC
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 175°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large
heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: May 2012
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Page 2 of 7
AOT414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
8V
10V
7V
50
40
ID(A)
40
ID (A)
VDS=5V
50
6.5V
30
125°C
30
20
20
25°C
VGS=6V
10
10
0
0
0
1
2
3
4
3
5
40
5
6
7
Normalized On-Resistance
On
2.6
35
RDS(ON) (mΩ
Ω)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=7V
30
25
VGS=10V
20
15
10
2.4
VGS=10V
ID=20A
2.2
2
1.8
1.6
1.4
VGS=7V
ID=15A
1.2
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
1.0E+02
ID=20A
1.0E+01
50
125°C
125°C
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
30
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
20
1.0E-04
1.0E-05
10
6
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: May 2012
7
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=50V
ID=20A
2000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
1000
Coss
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
TJ(Max)=175°C
TA=25°C
10µs
100.0
10.0
100µs
DC
1.0
1ms
10ms
Power (W)
ID (Amps)
10µs
RDS(ON)
700
17
5
2
10
400
0.1
TJ(Max)=175°C
TA=25°C
0.0
100
0.01
0.1
1
10
100
0.0001
VDS (Volts)
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: May 2012
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Page 4 of 7
AOT414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
50
TA=25°C
30
TA=100°C
TA=150°C
20
TA=125°C
10
120
90
60
30
0
0
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
60
50
50
40
40
30
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
Power (W)
Current rating ID(A)
0.000001
TA=25°C
30
20
20
10
10
0
0
0
25
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
50
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
1
175
0.01
1
100
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: May 2012
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Page 5 of 7
AOT414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
15
24
2
125ºC
di/dt=800A/µs
125ºC
250
di/dt=800A/µs
20
12
1.6
6
125ºC
S
3
50
0
10
15
20
25
0.4
25ºC
0
30
0
IS (A)
-RoHS Compliant
Figure 17: Diode Reverse Recovery Charge and Peak
-Halogen Free Current vs. Conduction Current
150
30
Is=20A
10
15
0
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
5
Is=20A
125ºC
25
14
Qrr
60
125ºC
10
25ºC
30
0
-2
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 1: May 2012
15
3
2.5
2
10
6
2
Irm
trr
25ºC
trr (ns)
25ºC
3.5
20
18
90
4.5
4
22
Irm (A)
Qrr (nC)
5
30
26
125ºC
120
125ºC
4
25ºC
Qrr
5
0.8
8
100
0
1.2
25ºC
S
150
trr
12
S
9
25ºC
Irm
trr (ns)
200
Irm (A)
Qrr (nC)
16
1.5
125ºC
25ºC
1
5
S
0
0.5
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AOT414
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: May 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7