AOT416 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 100V 42A RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS = 7V) < 43mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D D G D SD S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C ±25 V A 110 4.7 IDSM TA=70°C Units V 30 IDM TA=25°C Maximum 100 42 ID TC=100°C G A 3.8 Avalanche Current C IAS, IAR 28 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 39 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2. 0: August 2013 1.92 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.23 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 75 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 150 PD TC=100°C Typ 11.6 54 0.7 °C Max 13.9 65 1 Units °C/W °C/W °C/W Page 1 of 6 AOT416 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 10 TJ=55°C 50 Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 110 nA 4 V 31 37 55 66 VGS=7V, ID=15A 35 43 mΩ 28 1 V 95 A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime A 0.68 mΩ S 950 1180 1450 pF VGS=0V, VDS=50V, f=1MHz 77 110 145 pF 21 36 50 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.2 Ω 15 19 23 nC VGS=10V, VDS=50V, ID=20A 5.5 7 8.5 nC 3.5 6.3 9 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA ±100 Static Drain-Source On-Resistance Output Capacitance Units 3.4 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IGSS RDS(ON) Typ 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 19 25 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 50 70 90 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 7.2 ns 15 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2. 0: August 2013 www.aosmd.com Page 2 of 6 AOT416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 VDS=5V 10V 8V 50 7V 40 ID(A) 40 ID (A) 50 30 30 20 20 125°C 6V 10 10 25°C VGS=5V 0 0 0 1 2 3 4 3 5 50 5 6 7 8 9 Normalized On-Resistance 2.4 45 RDS(ON) (mΩ Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=7V 35 30 VGS=10V 25 20 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=7V ID=15A 1.2 17 5 2 10 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 70 1.0E+02 ID=20A 1.0E+01 60 40 125°C 50 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 40 1.0E-01 125°C 1.0E-02 1.0E-03 30 25°C 25°C 1.0E-04 20 6 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2. 0: August 2013 7 1.0E-05 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=50V ID=20A 1400 8 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Crss Coss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 100µs RDS(ON) 10.0 Power (W) ID (Amps) TJ(Max)=175°C TC=25°C 10µs 10µs 100.0 1ms 10ms 1.0 DC 700 17 5 2 10 400 TJ(Max)=175°C TC=25°C 0.1 0.0 100 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 100 1000 1000.0 10 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2. 0: August 2013 www.aosmd.com Page 4 of 6 AOT416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=25°C TA=100°C TA=150°C 150 100 50 TA=125°C 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 50 50 TA=25°C 40 Power (W) Current rating ID(A) 40 30 20 17 5 2 10 30 20 10 10 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.01 175 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) 1 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=65°C/W 40 1 0.1 PD Single Pulse Ton 0.01 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev.2. 0: August 2013 www.aosmd.com Page 5 of 6 AOT416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 30 3 20 16 90 15 Qrr 125ºC di/dt=800A/µs 1 S 25ºC 0 0 5 10 15 20 25 5 4 0 0 30 150 25ºC 0 30 25 Qrr 125ºC 25ºC 10 5 Irm 2.5 Is=20A 125ºC 0 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev.2. 0: August 2013 2 trr 25ºC 18 1.5 15 1 12 9 125ºC 6 0.5 S 3 200 30 S 15 0 25 21 Irm (A) Qrr (nC) 25ºC 0 20 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 24 20 0 15 27 120 30 10 30 125ºC 90 5 trr (ns) Is=20A 125ºC 0.5 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 1.5 8 Irm 30 2 25ºC trr 12 10 2.5 S 20 trr (ns) Qrr (nC) 25ºC 25 Irm (A) 120 60 24 125ºC 125ºC di/dt=800A/µs 25ºC 0 0 200 400 600 0 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 6