AOS Semiconductor Product Reliability Report AOT416/AOT416L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT416. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT416 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOT416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -AOT416L is Halogen Free 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Flammability Rating Backside Metallization Moisture Level AOT416 AOT416L (Green Compound) Standard sub-micron Standard sub-micron Low voltage N channel process Low voltage N channel process 3 leads TO220 3 leads TO220 Bare Cu Bare Cu Soft solder Soft solder Al 5&12mils Al 5&12mils UL-94 V-0 UL-94 V-0 Ti / Ni / Ag Ti / Ni / Ag Up to Level 1 * Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOT416 (Standard) & AOT416L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - Standard: 24 lots Green: 8 lots 4345pcs 0 77pcs 0 HTGB 168hrs 500 hrs 1000 hrs 1 lot (Note A*) HTRB Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 1 lot (Note A*) HAST 130°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs Pressure Pot 121°c , 29.7psi, RH=100% 96 hrs Temperature Cycle -65°c to 150°c , air to air 250 / 500 cycles Number of Failures 77 pcs / lot 77pcs 0 77 pcs / lot Standard : 21 lots Green: 5 lots 1430pcs 0 (Note B**) Standard : 24 lots Green: 5 lots 55 pcs / lot 1595pcs 0 (Note B**) Standard : 16 lots Green: 8 lots 55 pcs / lot 1320pcs 0 (Note B**) 55 pcs / lot 3 III. Result of Reliability Stress for AOT416 (Standard) & AOT416L (Green) Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOT416 and AOT416L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOT416 and AOT416L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 137 MTTF = 833 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOT416). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 6 MTTF = 10 / FIT = 7.30 x 10 hrs = 833 years / [2x2x77x168x258] = 137 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tju =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV/K 4